Results 1 to 10 of about 828 (186)

Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]

Small
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Haider F, Esmat B, Kashif AR, Khan MS, Safeen A, Khan BA, Khan K, Ali B.   +7 more
europepmc   +2 more sources

Revisiting the Mechanistic Pathway of Gas-Phase Reactions in InN MOVPE Through DFT Calculations [PDF]

Molecules
III-nitrides are crucial materials for solar flow batteries due to their versatile properties. In contrast to the well-studied MOVPE reaction mechanism for AlN and GaN, few works report gas-phase mechanistic studies on the growth of InN.
Xiaokun He, Nan Xu, Yuan Xue, Hong Zhang, Ran Zuo, Qian Xu   +5 more
doaj   +2 more sources

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity [PDF]

Scientific Reports
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips, Alistair J. Brash, Max Godsland, Nicholas J. Martin, Andrew Foster, Anna Tomlinson, René Dost, Nasser Babazadeh, Elisa M. Sala, Luke Wilson, Jon Heffernan, Maurice S. Skolnick, A. Mark Fox   +12 more
doaj   +2 more sources

Ultra-lightweight and flexible inverted metamorphic four junction solar cells for space applications

EPJ Photovoltaics, 2022
In this work an inverted metamorphic four junction (IMM4J) solar cell with 30.9% conversion efficiency in beginning of life conditions under the AM0 (1367 W/m2) spectrum is presented.
Klitzke Malte, Schön Jonas, Van Leest Rosalinda H., Bissels Gunther M.M.W., Vlieg Elias, Schachtner Michael, Dimroth Frank, Lackner David   +7 more
doaj   +1 more source

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

EPJ Photovoltaics, 2023
The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs.
Soresi Stefano, da Lisca Mattia, Besancon Claire, Vaissiere Nicolas, Larrue Alexandre, Calo Cosimo, Alvarez José, Longeaud Christophe, Largeau Ludovic, Garcia Linares Pablo, Tournié Eric, Kleider Jean-Paul, Decobert Jean   +12 more
doaj   +1 more source

Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy

Scientific Reports, 2023
AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) are expected to have various applications, including sensing and printing, and light with ultraviolet-C (UVC) wavelengths has a virus inactivation effect.
Atsushi Tomita, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu   +5 more
doaj   +1 more source

MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy

Crystals, 2020
A technique for direct study of the distribution of the applied voltage within a quantum cascade laser (QCL) has been developed. The detailed profile of the potential in the laser claddings and laser core region has been obtained by gradient scanning ...
Konstantin Ladutenko, Vadim Evtikhiev, Dmitry Revin, Andrey Krysa   +3 more
doaj   +1 more source

Growth of GaSb by MOVPE

Semiconductor Science and Technology, 1988
High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were
Haywood, S, Henriques, A, Mason, N, Nicholas, R, Walker, P   +4 more
openaire   +1 more source

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga₂O₃ Thin Films by Deep-Learning Approach

Crystals, 2021
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp   +10 more
doaj   +1 more source

MOVPE Technology of Fe-Compensated In PLayers for the Quantum Cascade Laser Applications [PDF]

International Journal of Electronics and Telecommunications, 2020
Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core.
Mikołaj Badura
doaj   +1 more source