Results 1 to 10 of about 7,044 (217)

Site-control of InAs quantum dots on InP by droplet epitaxy in MOVPE [PDF]

npj Nanophotonics
We demonstrate a novel approach for site-controlled growth of InAs quantum dots on InP substrates emitting at telecom wavelengths, including the C-band, for quantum photonics applications. Regular nanohole arrays were defined by electron-beam lithography
Guoliang Zhou, Elisa M. Sala, Young In Na, Paul W. Fry, Dominic J. Hallett, Alistair J. Brash, Luke Wilson, Jon Heffernan   +7 more
doaj   +2 more sources

Revisiting the Mechanistic Pathway of Gas-Phase Reactions in InN MOVPE Through DFT Calculations [PDF]

Molecules
III-nitrides are crucial materials for solar flow batteries due to their versatile properties. In contrast to the well-studied MOVPE reaction mechanism for AlN and GaN, few works report gas-phase mechanistic studies on the growth of InN.
Xiaokun He, Nan Xu, Yuan Xue, Hong Zhang, Ran Zuo, Qian Xu   +5 more
doaj   +2 more sources

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity [PDF]

Scientific Reports
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips, Alistair J. Brash, Max Godsland, Nicholas J. Martin, Andrew Foster, Anna Tomlinson, René Dost, Nasser Babazadeh, Elisa M. Sala, Luke Wilson, Jon Heffernan, Maurice S. Skolnick, A. Mark Fox   +12 more
doaj   +2 more sources

Ultra-lightweight and flexible inverted metamorphic four junction solar cells for space applications

EPJ Photovoltaics, 2022
In this work an inverted metamorphic four junction (IMM4J) solar cell with 30.9% conversion efficiency in beginning of life conditions under the AM0 (1367 W/m2) spectrum is presented.
Klitzke Malte, Schön Jonas, Van Leest Rosalinda H., Bissels Gunther M.M.W., Vlieg Elias, Schachtner Michael, Dimroth Frank, Lackner David   +7 more
doaj   +1 more source

Epitaxy and characterization of InP/InGaAs tandem solar cells grown by MOVPE on InP and Si substrates

EPJ Photovoltaics, 2023
The integration of III-V multi-junction solar cells on Si substrates is currently one of the most promising possibilities to combine high photovoltaic performance with a reduction of the manufacturing costs.
Soresi Stefano, da Lisca Mattia, Besancon Claire, Vaissiere Nicolas, Larrue Alexandre, Calo Cosimo, Alvarez José, Longeaud Christophe, Largeau Ludovic, Garcia Linares Pablo, Tournié Eric, Kleider Jean-Paul, Decobert Jean   +12 more
doaj   +1 more source

MOVPE-Grown Quantum Cascade Laser Structures Studied by Kelvin Probe Force Microscopy

Crystals, 2020
A technique for direct study of the distribution of the applied voltage within a quantum cascade laser (QCL) has been developed. The detailed profile of the potential in the laser claddings and laser core region has been obtained by gradient scanning ...
Konstantin Ladutenko, Vadim Evtikhiev, Dmitry Revin, Andrey Krysa   +3 more
doaj   +1 more source

Investigation of V/III ratio dependencies for optimizing AlN growth during reduced parasitic reaction in metalorganic vapor phase epitaxy

Scientific Reports, 2023
AlGaN-based ultraviolet (UV) light-emitting diodes (LEDs) are expected to have various applications, including sensing and printing, and light with ultraviolet-C (UVC) wavelengths has a virus inactivation effect.
Atsushi Tomita, Takumi Miyagawa, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi, Kentaro Nagamatsu   +5 more
doaj   +1 more source

Growth of GaSb by MOVPE

Semiconductor Science and Technology, 1988
High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were
Haywood, S, Henriques, A, Mason, N, Nicholas, R, Walker, P   +4 more
openaire   +1 more source

MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and

Journal of Telecommunications and Information Technology, 2002
The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V ...
Włodzimierz Strupiński, Kamil Kosiel, Agata Jasik, Rafał Jakieła, Andrzej Jeleński, Eric Kollberg, Larse Dillner, Muhammat Nawaz   +7 more
doaj   +1 more source

Improvement of structural quality of AlN layers grown on c-plane sapphire substrate by metal–organic vapor phase epitaxy using post-growth annealing with trimethylgallium

AIP Advances, 2022
AlN layers were grown on a c-plane sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 1350 °C. The structural quality of the grown AlN layers was drastically improved by post-growth annealing in mixed hydrogen, ammonia, and ...
Masataka Imura, Hideki Inaba, Takaaki Mano, Nobuyuki Ishida, Fumihiko Uesugi, Yoko Kuroda, Yoshiko Nakayama, Masaki Takeguchi, Yasuo Koide   +8 more
doaj   +1 more source