Results 31 to 40 of about 5,528 (229)

GaSb/InAs heterojunctions grown by MOVPE

Journal of Crystal Growth, 1991
Abstract We have previously reported the MOVPE growth of a GaSb/InAs heterojunction containing a two-dimensional electron gas (2DEG) in the InAs [1]. A major improvement in the electrical quality of InAs layers has subsequently resulted from the use of tertiarybutylarsine (TBAs) as the arsenic source.
Haywood, S, Martin, R, Mason, N, Nicholas, R, Walker, P   +4 more
openaire   +2 more sources

MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure

, 2022
S.G11 4The realisation of TBQW structures requires material of optimised optical, electrical and structural properties. Therefore investigations on the MOVPE growth conditions were carried out which is be reported following a brief discussion of the TBQW
Bach, H.-G., Hoffmann, D., Reier, F.W., Bornholdt, C., Weinert, C.M., Morl, L.   +5 more
core  

Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

Applied Physics Express
AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker
Ryota Akaike, Kenjiro Uesugi, Kohei Shima, Shigefusa F. Chichibu, Akira Uedono, Takao Nakamura, Hideto Miyake   +6 more
doaj   +1 more source

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells

International Journal of Photoenergy, 2014
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper.
N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. A. Mintairov, A. S. Gudovskikh, A. Luque, V. M. Andreev   +7 more
doaj   +1 more source

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Nanomaterials, 2022
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates ...
Kazimieras Badokas, Arūnas Kadys, Dominykas Augulis, Jūras Mickevičius, Ilja Ignatjev, Martynas Skapas, Benjaminas Šebeka, Giedrius Juška, Tadas Malinauskas   +8 more
doaj   +1 more source

Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures

physica status solidi (a), Volume 223, Issue 7, 7 April 2026.
The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu, Hiroki Imabayashi, Kenji Shiojima   +2 more
wiley   +1 more source

Structural defects in MOVPE grown CdTe/GaAs [PDF]

, 1995
This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE).
Port, R.I., Port, Ruth Isabel
core  

Micro‐Transfer Printed Continuous‐Wave and Mode‐Locked Laser Integration at 800 nm on a Silicon Nitride Platform

Laser &Photonics Reviews, Volume 20, Issue 7, 6 April 2026.
A heterogeneous III‐V/SiN platform for lasers at 800 nm is realized using the micro‐transfer printing method. Efficient GaAs gain sections are directly butt‐coupled to SiN waveguides, enabling continuous‐wave and mode‐locked extended‐cavity lasers. The mode‐locked lasers generate highly stable pulse trains with repetition rates up to 9.2 GHz and a ...
Max Kiewiet, Stijn Cuyvers, Maximilien Billet, Konstantinos Akritidis, Valeria Bonito Oliva, Gaudhaman Jeevanandam, Sandeep Saseendran, Manuel Reza, Pol Van Dorpe, Roelof Jansen, Joost Brouckaert, Günther Roelkens, Kasper Van Gasse, Bart Kuyken   +13 more
wiley   +1 more source

Superlattice Structure of Quantum Cascade Lasers: Structural and Morphological Effects of AsH₃ Flow

Cumhuriyet Science Journal
The quantum cascade lasers (QCLs) have been widely used in mid-infrared applications due to their high power, efficiency, and design flexibility. The InP-based quantum cascade lasers, particularly those utilizing In 0.53 Ga 0.47 As/In0.52Al0.48As ...
Merve Nur Koçak, İlkay Demir
doaj   +1 more source

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Energies, 2021
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device.
Wojciech Dawidowski, Beata Ściana, Katarzyna Bielak, Miroslav Mikolášek, Jakub Drobný, Jarosław Serafińczuk, Iván Lombardero, Damian Radziewicz, Wojciech Kijaszek, Arpád Kósa, Martin Florovič, Jaroslav Kováč, Carlos Algora, L’ubica Stuchlíková   +13 more
doaj   +1 more source