Results 31 to 40 of about 7,044 (217)

Multicharacterization approach for studying InAl(Ga)N/Al(Ga)N/GaN heterostructures for high electron mobility transistors

AIP Advances, 2014
We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal ...
G. Naresh-Kumar, A. Vilalta-Clemente, S. Pandey, D. Skuridina, H. Behmenburg, P. Gamarra, G. Patriarche, I. Vickridge, M. A. di Forte-Poisson, P. Vogt, M. Kneissl, M. Morales, P. Ruterana, A. Cavallini, D. Cavalcoli, C. Giesen, M. Heuken, C. Trager-Cowan   +17 more
doaj   +1 more source

Growth of branched nanowires via solution-based Au seed particle deposition

Materials Research Express, 2023
Nanowires offer unprecedented flexibility as nanoscale building blocks for future optoelectronic devices, especially with respect to nanowire solar cells and light-emitting diodes.
Kristi Adham, Yue Zhao, Lukas Hrachowina, David Alcer, Reine Wallenberg, Magnus T Borgström   +5 more
doaj   +1 more source

Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells

International Journal of Photoenergy, 2014
A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper.
N. A. Kalyuzhnyy, V. V. Evstropov, V. M. Lantratov, S. A. Mintairov, M. A. Mintairov, A. S. Gudovskikh, A. Luque, V. M. Andreev   +7 more
doaj   +1 more source

Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE

Crystals, 2019
AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up
Maxim A. Ladugin, Irina V. Yarotskaya, Timur A. Bagaev, Konstantin Yu. Telegin, Andrey Yu. Andreev, Ivan I. Zasavitskii, Anatoliy A. Padalitsa, Alexander A. Marmalyuk   +7 more
doaj   +1 more source

GaSb/InAs heterojunctions grown by MOVPE

Journal of Crystal Growth, 1991
Abstract We have previously reported the MOVPE growth of a GaSb/InAs heterojunction containing a two-dimensional electron gas (2DEG) in the InAs [1]. A major improvement in the electrical quality of InAs layers has subsequently resulted from the use of tertiarybutylarsine (TBAs) as the arsenic source.
Haywood, S, Martin, R, Mason, N, Nicholas, R, Walker, P   +4 more
openaire   +2 more sources

Impacts of homoepitaxial AlN thickness on the qualities of AlGaN QWs fabricated on the face-to-face annealed sputter-deposited AlN templates

Applied Physics Express
AlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker
Ryota Akaike, Kenjiro Uesugi, Kohei Shima, Shigefusa F. Chichibu, Akira Uedono, Takao Nakamura, Hideto Miyake   +6 more
doaj   +1 more source

Superlattice Structure of Quantum Cascade Lasers: Structural and Morphological Effects of AsH₃ Flow

Cumhuriyet Science Journal
The quantum cascade lasers (QCLs) have been widely used in mid-infrared applications due to their high power, efficiency, and design flexibility. The InP-based quantum cascade lasers, particularly those utilizing In 0.53 Ga 0.47 As/In0.52Al0.48As ...
Merve Nur Koçak, İlkay Demir
doaj   +1 more source

Structural defects in MOVPE grown CdTe/GaAs [PDF]

, 1995
This work presents a study of the character and distribution of structural defects in (00l)CdTe buffer layers grown on GaAs substrates by metal organic vapour phase epitaxy (MOVPE).
Port, R.I., Port, Ruth Isabel
core  

Unveiling Graphitic Carbon Nitride in Hexagonal Boron Nitride Epitaxy on Sapphire

Small, EarlyView.
Understanding how crystallographic orientation transfers across weakly bonded 2D/3D interfaces is fundamental for van der Waals materials epitaxy. This study reveals that an interfacial graphitic carbon nitride (g‐C3N4) layer plays a pivotal role in aligning hexagonal boron nitride on sapphire.
Jakub Iwański, Wiktoria Zajkowska‐Pietrzak, Aleksandra K. Dąbrowska, Mateusz Tokarczyk, Marta Bilska, Marcin Strawski, Magdalena Skompska, Krzysztof P. Korona, Sławomir Kret, Johannes Binder, Andrzej Wysmołek   +10 more
wiley   +1 more source

Development of Sandwich AlN on PSS via Layered V/III Ratio Optimization

Cumhuriyet Science Journal
This study presents a comprehensive investigation into the effects of layer-by-layer V/III ratio optimization on the structural, optical, and morphological properties of AlN films grown on patterned sapphire substrates (PSS) using the PALE technique.
Ferhan Kübra Özbakır, İsmail Altuntas   +1 more
doaj   +1 more source