Results 31 to 40 of about 11,730 (206)
Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires
Nanomaterials, 2018 We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream® technique
Amine El Kacimi +3 more
doaj +1 more source
Scientific Reports, 2021 Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE).
Aykut Baki +9 more
doaj +1 more source
Use of AlInN layers in optical monitoring of growth of GaN-based structures on free-standing GaN substrates [PDF]
, 2005 When lattice matched to GaN, the AlInN ternary alloy has a refractive index ~7% lower than that of GaN. This characteristic can be exploited to perform in situ reflectometry during epitaxial growth of GaN-based multilayer structures on free-standing GaN ...
Dawson, M.D. +5 more
core +1 more source
AIP Advances, 2014 We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal ...
G. Naresh-Kumar +17 more
doaj +1 more source
III-Vs Review, 1998 AbstractGetter purified nitrogen carrier gas has become well established for LP-MOVPE in the last three years. With green nitrogen bottles (or a liquid nitrogen source) gradually replacing red hydrogen bottles in MOVPE laboratories, this article highlights the history and development of the new process and demonstrates its suitability for the growth of
Hardtdegen, Hilde, Giannolés, Paulos
openaire +1 more source
Photoluminescent characteristics of Ni-catalyzed GaN nanowires [PDF]
, 2019 The authors report on time-integrated and time-resolved photoluminescence (PL) of GaN nanowires grown by the Ni-catalyst-assisted vapor-liquid-solid method. From PL spectra of Ni-catalyzed GaN nanowires at 10 K, several PL peaks were observed at 3.472, 3.
An, SJ +7 more
core +1 more source
Characterization of the Manufacturing Processes to Grow Triple-Junction Solar Cells
International Journal of Photoenergy, 2014 A number of important but little-investigated problems connected with III-V/Ge heterostructure in the GaInP/GaInAs/Ge multijunction solar cells grown by MOVPE are considered in the paper.
N. A. Kalyuzhnyy +7 more
doaj +1 more source
Growth of branched nanowires via solution-based Au seed particle deposition
Materials Research Express, 2023 Nanowires offer unprecedented flexibility as nanoscale building blocks for future optoelectronic devices, especially with respect to nanowire solar cells and light-emitting diodes.
Kristi Adham +5 more
doaj +1 more source
GaSb/InAs heterojunctions grown by MOVPE
Journal of Crystal Growth, 1991 Abstract We have previously reported the MOVPE growth of a GaSb/InAs heterojunction containing a two-dimensional electron gas (2DEG) in the InAs [1]. A major improvement in the electrical quality of InAs layers has subsequently resulted from the use of tertiarybutylarsine (TBAs) as the arsenic source.
Haywood, S +4 more
openaire +2 more sources
Comparison of dynamic properties of InP/InAs quantum-dot and quantum-dash lasers [PDF]
, 2016 This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. This article appeared in Appl. Phys. Lett.
Arsenijević, Dejan +2 more
core +1 more source