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Detailed models of the MOVPE process
Journal of Crystal Growth, 1991 Abstract We present physicochemical models of the MOVPE process that describe two- and three-dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors. Emphasis is placed on understanding the development of fully three-dimensional flows and on the interaction between transport and ...
Jensen, K. F. +2 more
openaire +2 more sources
LP-MOVPE growth of laser structures using nitrogen carrier gas
, 2022 S.D9 4The replacement of the commonly used hydrogen by nitrogen as the carrier gas in MOVPE has been discussed from time to time, mainly with respect to safety considerations, but also to reaction-kinetic aspects. Recently, Hardtdegen et al. reported the
Roehle, H., Schroeter-Janssen, H.
core +1 more source
1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
AIP Advances, 2018 N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %.
E. Sterzer +9 more
doaj +1 more source
Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Cumhuriyet Science Journal, 2018 In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
doaj +1 more source
, 2022 S.G11 4The realisation of TBQW structures requires material of optimised optical, electrical and structural properties. Therefore investigations on the MOVPE growth conditions were carried out which is be reported following a brief discussion of the TBQW
Bach, H.-G. +5 more
core +1 more source
High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
Scientific Reports, 2023 Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate.
Kentaro Nagamatsu +5 more
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AIP Advances, 2019 The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) with an ...
Kanako Shojiki +5 more
doaj +1 more source
Scientific Reports, 2021 Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE).
Aykut Baki +9 more
doaj +1 more source
Scientific Reports, 2018 We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on
Galia Pozina +10 more
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Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires
Nanomaterials, 2018 We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream® technique
Amine El Kacimi +3 more
doaj +1 more source