1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
AIP Advances, 2018 N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %.
E. Sterzer +9 more
doaj +1 more source
Optical characteristics of single wavelength-tunable InAs/InGaAsP/InP(100) quantum dots emitting at 1.55 um [PDF]
, 2006 We have studied the emission properties of individual InAs quantum dots (QDs) grown in an InGaAsP matrix on InP(100) by metal-organic vapor-phase epitaxy.
Anantathanasarn, S. +5 more
core +2 more sources
Cross-sectional and plan-view cathodoluminescence of GaN partially coalesced above a nanocolumn array [PDF]
, 2012 The optical properties of GaN layers coalesced above an array of nanocolumns have important consequences for advanced optoelectronic devices. GaN nanocolumns coalesced using a nanoscale epitaxial overgrowth technique have been investigated by high ...
Edwards, P. R. +4 more
core +2 more sources
High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
Scientific Reports, 2023 Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate.
Kentaro Nagamatsu +5 more
doaj +1 more source
Toward defect-free semi-polar GaN templates on pre-structured sapphire [PDF]
, 2016 The microstructure of semi-polar (11–22) GaN templates grown on pre-structured r-plane sapphire by MOVPE has been characterized by TEM. Cross-sectional observations indicate that defects are generated in three regions of the layers: threading ...
Caliebe +18 more
core +1 more source
Quantum well and dot self-aligned stripe lasers utilizing an InGaP optoelectronic confinement layer [PDF]
, 2009 We demonstrate and study a novel process for fabrication of GaAs-based self-aligned lasers based upon a single over-growth. A lattice-matched n-doped InGaP layer is utilized for both electrical and optical confinements.
Alexander, R.R +9 more
core +1 more source
Time-Resolved characterization of InAsP/InP quantum dots emitting in the C-band telecommunication window [PDF]
, 2008 The dynamic response of InAsP quantum dots grown on InP(001) substrates by low-pressure Metalorganic Vapor Phase Epitaxy emitting around 1.55 $\mu$m, is investigated by means of time-resolved microphotoluminescence as a function of temperature.
Beaudoin, Gregoire +8 more
core +2 more sources
AIP Advances, 2019 The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) with an ...
Kanako Shojiki +5 more
doaj +1 more source
Facet modulation selective epitaxy–a technique for quantum-well wire doublet fabrication [PDF]
, 1992 The technique of facet modulation selective epitaxy and its application to quantum-well wire doublet fabrication are described. Successful fabrication of wire doublets in the AlxGa1–xAs material system is achieved.
Ahn, Channing C. +4 more
core +1 more source
Scientific Reports, 2018 We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on
Galia Pozina +10 more
doaj +1 more source