Results 21 to 30 of about 7,044 (217)

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Cumhuriyet Science Journal, 2018
In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
doaj   +1 more source

MOVPE growth of a polarisation independent electro-optic GaInAs/AlInAs tunnelling barrier MQW waveguide structure

, 2022
S.G11 4The realisation of TBQW structures requires material of optimised optical, electrical and structural properties. Therefore investigations on the MOVPE growth conditions were carried out which is be reported following a brief discussion of the TBQW
Bach, H.-G., Hoffmann, D., Reier, F.W., Bornholdt, C., Weinert, C.M., Morl, L.   +5 more
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High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy

Scientific Reports, 2023
Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate.
Kentaro Nagamatsu, Takumi Miyagawa, Atsushi Tomita, Hideki Hirayama, Yuusuke Takashima, Yoshiki Naoi   +5 more
doaj   +1 more source

LP-MOVPE growth of laser structures using nitrogen carrier gas

, 2022
S.D9 4The replacement of the commonly used hydrogen by nitrogen as the carrier gas in MOVPE has been discussed from time to time, mainly with respect to safety considerations, but also to reaction-kinetic aspects. Recently, Hardtdegen et al. reported the
Roehle, H., Schroeter-Janssen, H.
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Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]

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This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Haider F, Esmat B, Kashif AR, Khan MS, Safeen A, Khan BA, Khan K, Ali B.   +7 more
europepmc   +2 more sources

Impact of face-to-face annealed sputtered AlN on the optical properties of AlGaN multiple quantum wells

AIP Advances, 2019
The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) with an ...
Kanako Shojiki, Ryota Ishii, Kenjiro Uesugi, Mitsuru Funato, Yoichi Kawakami, Hideto Miyake   +5 more
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Influence of Sr deficiency on structural and electrical properties of SrTiO3 thin films grown by metal–organic vapor phase epitaxy

Scientific Reports, 2021
Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE).
Aykut Baki, Julian Stöver, Tobias Schulz, Toni Markurt, Houari Amari, Carsten Richter, Jens Martin, Klaus Irmscher, Martin Albrecht, Jutta Schwarzkopf   +9 more
doaj   +1 more source

Approach to high quality GaN lateral nanowires and planar cavities fabricated by focused ion beam and metal-organic vapor phase epitaxy

Scientific Reports, 2018
We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on
Galia Pozina, Azat R. Gubaydullin, Maxim I. Mitrofanov, Mikhail A. Kaliteevski, Iaroslav V. Levitskii, Gleb V. Voznyuk, Evgeniy E. Tatarinov, Vadim P. Evtikhiev, Sergey N. Rodin, Vasily N. Kaliteevskiy, Leonid S. Chechurin   +10 more
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Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires

Nanomaterials, 2018
We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream® technique
Amine El Kacimi, Emmanuelle Pauliac-Vaujour, Olivier Delléa, Joël Eymery   +3 more
doaj   +1 more source

Power P-HEMT realization on MOVPE structures [PDF]

, 1994
The paper presents the fabrication of power P-HEMTs on epitaxial structures grown by low pressure MOVPE technology featuring a Si planar doped (? doped) A0.22GaAs supply layer.
Pansini, E., Vidimari, F., Di Paola, A., Parravicini, S., Germagnoli, A., Ritchie, D., Tromby, M., Di Egidio, M., Caligiore, A., Grassi, E.   +9 more
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