Results 21 to 30 of about 5,528 (229)
1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)
AIP Advances, 2018 N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %.
E. Sterzer +9 more
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High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
Scientific Reports, 2023 Deep ultraviolet light-emitting diodes have attracted considerable attention for realizing virus inactivation applications. The UV-LEDs use the AlN underlying layer and the plane sapphire substrate.
Kentaro Nagamatsu +5 more
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AIP Advances, 2019 The impact of a face-to-face annealed sputtered AlN/sapphire (FFA Sp-AlN) template with threading-dislocation densities (TDDs) of 2 × 108 cm−2 and an n-type AlGaN (n-AlGaN) underlayer on optical properties of AlGaN multiple quantum wells (MQWs) with an ...
Kanako Shojiki +5 more
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Scientific Reports, 2018 We have developed a method to fabricate GaN planar nanowires and cavities by combination of Focused Ion Beam (FIB) patterning of the substrate followed by Metal Organic Vapor Phase Epitaxy (MOVPE). The method includes depositing a silicon nitride mask on
Galia Pozina +10 more
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Scientific Reports, 2021 Homoepitaxial growth of SrTiO3 thin films on 0.5 wt% niobium doped SrTiO3 (100) substrates with high structural perfection was developed using liquid-delivery spin metal–organic vapor phase epitaxy (MOVPE).
Aykut Baki +9 more
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AIP Advances, 2014 We report on our multi–pronged approach to understand the structural and electrical properties of an InAl(Ga)N(33nm barrier)/Al(Ga)N(1nm interlayer)/GaN(3μm)/ AlN(100nm)/Al2O3 high electron mobility transistor (HEMT) heterostructure grown by metal ...
G. Naresh-Kumar +17 more
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Piezo-Potential Generation in Capacitive Flexible Sensors Based on GaN Horizontal Wires
Nanomaterials, 2018 We report an example of the realization of a flexible capacitive piezoelectric sensor based on the assembly of horizontal c¯-polar long Gallium nitride (GaN) wires grown by metal organic vapour phase epitaxy (MOVPE) with the Boostream® technique
Amine El Kacimi +3 more
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LP-MOVPE growth of laser structures using nitrogen carrier gas
, 2022 S.D9 4The replacement of the commonly used hydrogen by nitrogen as the carrier gas in MOVPE has been discussed from time to time, mainly with respect to safety considerations, but also to reaction-kinetic aspects. Recently, Hardtdegen et al. reported the
Roehle, H., Schroeter-Janssen, H.
core
Growth of branched nanowires via solution-based Au seed particle deposition
Materials Research Express, 2023 Nanowires offer unprecedented flexibility as nanoscale building blocks for future optoelectronic devices, especially with respect to nanowire solar cells and light-emitting diodes.
Kristi Adham +5 more
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Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
Crystals, 2019 AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up
Maxim A. Ladugin +7 more
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