Results 11 to 20 of about 11,730 (206)

Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]

Small
This review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Haider F, Esmat B, Kashif AR, Khan MS, Safeen A, Khan BA, Khan K, Ali B.   +7 more
europepmc   +2 more sources

Unusual nanostructures of "lattice matched" InP on AlInAs [PDF]

, 2014
We show that the morphology of the initial monolayers of InP on Al0.48In0.52As grown by metalorganic vapor-phase epitaxy does not follow the expected layer-by-layer growth mode of lattice-matched systems, but instead develops a number of low-dimensional ...
Dimastrodonato, V., Gocalinska, A., Joyce, B. A., Juska, G., Manganaro, M., Pelucchi, E., Thomas, K., Vvedensky, D. D., Zhang, J.   +8 more
core   +2 more sources

Multi-technique characterisation of MOVPE-grown GaAs on Si [PDF]

, 2010
The heterogeneous integration of III-V materials on a Si CMOS platform offers tremendous prospects for future high speed and low power logic applications. That said this integration generates immense scientific and technological challenges.
Benedicto, M., Bennett, N.S., Cherkaoui, K., Galiana, B., Hurley, P.K., McNally, Patrick J., Molina-Aldareguia, J.M., Monaghan, S., Tejedor, P., Wong, Chiu Soon   +9 more
core   +1 more source

MOVPE Technology of Fe-Compensated In PLayers for the Quantum Cascade Laser Applications [PDF]

International Journal of Electronics and Telecommunications, 2020
Quantum cascade laser is one of the most sophisticated semiconductor devices. Its technology requires extremely high precision and layers quality. Device performance is limited by thermal extraction form laser core.
Mikołaj Badura
doaj   +1 more source

GaSb heterostructures grown by MOVPE

Journal of Crystal Growth, 1988
GaSb based heterostructures have been grown with a varying degree of strain in the GaSb layer as a result of the lattice mismatch. The GaSb/Ga1−xAlxSb system has ⩽0.65% mismatch making it potentially attractive for epitaxial growth. However, both the crystallinity and electrical quality of MOVPE grown Ga1−xAlxSb were found to be limited by carbon ...
Chidley, E, Haywood, S, Mallard, R, Mason, N, Nicholas, R, Walker, P, Warburton, R   +6 more
openaire   +2 more sources

Effect of multilayer barriers on the optical properties of GaInNAs single quantum-well structures grown by metalorganic vapor phase epitaxy [PDF]

, 2005
We report on the effects of combined strain-compensating and strain-mediating layers of various widths on the optical properties of 1.3 μm GaInNAs∕GaAs single quantum well structures grown by metalorganic vapor phase epitaxy (MOVPE).
Calvez, S., Clark, A.H., Dawson, M.D., Kim, K.S., Kim, T., Park, Y.J., Sun, H.D.   +6 more
core   +1 more source

Growth of GaSb by MOVPE

Semiconductor Science and Technology, 1988
High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were
Haywood, S, Henriques, A, Mason, N, Nicholas, R, Walker, P   +4 more
openaire   +1 more source

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

AIP Advances, 2021
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm.
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp   +9 more
doaj   +1 more source

Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates

Cumhuriyet Science Journal, 2018
In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
doaj   +1 more source

Epitaxial growth of aligned semiconductor nanowire metamaterials for photonic applications [PDF]

, 2008
A novel class of optical metamaterials is presented consisting of high densities of aligned gallium phosphide (GaP) nanowires fabricated using metal-organic vapor phase-epitaxy.
Bakkers, Bohren, Born, Burnett, De Heer, Doron-Mor, Engheta, Genereux, Givargizov, Gross, Hochbaum, Kosaka, Kotlyar, Künzner, Law, Li, Lin, Liu, Létant, Muskens, Muskens, Mårtensson, Palik, Pauzauskie, Peeters, Stewart, Tian, Tong, Verheijen, Wagner, Wang, Weber, Xi, Xu   +33 more
core   +1 more source