Results 11 to 20 of about 6,729 (212)
The MOVPE community meets in Berlin [PDF]
III-Vs Review, 1997 AbstractBerlin, host of this year's European Workshop on Metal-Organic Vapour Phase Epitaxy (EW MOVPE VII), is a city which has developed into one of the ‘centres of excellence’ in the field of MOVPE. An overview of MOVPE activities and related issues in the German capital — from basic growth studies to research and development of devices — is ...
Resch-Esser, U., U. Resch-Esser
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III-Vs Review, 1998 AbstractGetter purified nitrogen carrier gas has become well established for LP-MOVPE in the last three years. With green nitrogen bottles (or a liquid nitrogen source) gradually replacing red hydrogen bottles in MOVPE laboratories, this article highlights the history and development of the new process and demonstrates its suitability for the growth of
Hardtdegen, Hilde, Giannolés, Paulos
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Robust reaction-transport models of MOVPE reactors
, 1998 A simple gas-phase and surface kinetic model describing the Metallorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis.
Theodoropoulos, C.; id_orcid +2 more
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Progress in MOVPE growth of Ga2O3
, 2019 The metalorganic vapor-phase epitaxy (MOVPE) of gallium oxide is reviewed. It is shown that different Ga2O3 phases can be prepared by tuning the epitaxial growth parameters. The deposition temperature, partial pressure of the precursors, and crystallographic structure of the starting substrate/template are crucial in providing ?, ?, ?, and ? polymorph.
Fornari, Roberto
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Semiconductor Science and Technology, 1988 High-quality homo- and hetero-epitaxial GaSb has been grown from TMGa and TMSb using atmospheric pressure metal-organic vapour-phase epitaxy (MOVPE). Unintentionally doped material was p-type. At 295 K it had a carrier concentration of around 3.0*1016 cm-3 and a corresponding Hall mobility in the range of 670 to 1000 cm2 V-1 s-1. Growth parameters were
Haywood, S +4 more
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Gallium Nitride-Based Electrode Materials for Supercapacitors: From Wide Band Semiconductor to Energy Storage Platform. [PDF]
SmallThis review focuses on capability of Gallium Nitride (GaN)‐based supercapacitors, bordering the advancement from porous architecture to novel hybrid nanostructures. It systematically investigates synthesis approaches and charge storage mechanisms that generate remarkable energy densities and competent cyclic stability.
Haider F +7 more
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AIP Advances, 2022 AlN layers were grown on a c-plane sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 1350 °C. The structural quality of the grown AlN layers was drastically improved by post-growth annealing in mixed hydrogen, ammonia, and ...
Masataka Imura +8 more
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GaSb heterostructures grown by MOVPE
Journal of Crystal Growth, 1988 GaSb based heterostructures have been grown with a varying degree of strain in the GaSb layer as a result of the lattice mismatch. The GaSb/Ga1−xAlxSb system has ⩽0.65% mismatch making it potentially attractive for epitaxial growth. However, both the crystallinity and electrical quality of MOVPE grown Ga1−xAlxSb were found to be limited by carbon ...
Chidley, E +6 more
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Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
AIP Advances, 2021 A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm.
Ta-Shun Chou +9 more
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Enhanced GaN Decomposition at MOVPE Pressures [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1998 GaN decomposition was studied above 800 °C in flowing H2 and N2 for pressures ranging from 10 to 700 torr. From careful weighings of the GaN film on sapphire before and after annealing, the rates for GaN decomposition, Ga surface accumulation, and Ga desorption were obtained.
D.D. Koleske +5 more
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