Results 11 to 20 of about 5,528 (229)
III-Vs Review, 1998 AbstractGetter purified nitrogen carrier gas has become well established for LP-MOVPE in the last three years. With green nitrogen bottles (or a liquid nitrogen source) gradually replacing red hydrogen bottles in MOVPE laboratories, this article highlights the history and development of the new process and demonstrates its suitability for the growth of
Hardtdegen, Hilde, Giannolés, Paulos
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III-Vs Review, 2004 AbstractAs MOVPE moves into a production line tool thanks to nitrides, all eyes turn to the silicon industry's approach to safety. But compound has its own peculiar problems, which emerged from the audience comments and questions at an expert panel talk.
Purvis, Gail
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The MOVPE community meets in Berlin
III-Vs Review, 1997 AbstractBerlin, host of this year's European Workshop on Metal-Organic Vapour Phase Epitaxy (EW MOVPE VII), is a city which has developed into one of the ‘centres of excellence’ in the field of MOVPE. An overview of MOVPE activities and related issues in the German capital — from basic growth studies to research and development of devices — is ...
Resch-Esser, U., U. Resch-Esser
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MOVPE InP based material for millimetsubmillimeter wave generation and amplificationer and
Journal of Telecommunications and Information Technology, 2002 The potential of the MOVPE growth process for millimeter and submillimeter wave generation and amplification is presented. The increase in layer quality, the improved homogeneity and purity, the precision of mono-layers growth and wide spectrum III-V ...
Włodzimierz Strupiński +7 more
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Enhanced GaN Decomposition at MOVPE Pressures [PDF]
MRS Internet Journal of Nitride Semiconductor Research, 1998 GaN decomposition was studied above 800 °C in flowing H2 and N2 for pressures ranging from 10 to 700 torr. From careful weighings of the GaN film on sapphire before and after annealing, the rates for GaN decomposition, Ga surface accumulation, and Ga desorption were obtained.
D.D. Koleske +5 more
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AIP Advances, 2022 AlN layers were grown on a c-plane sapphire substrate by metal–organic vapor phase epitaxy (MOVPE) at 1350 °C. The structural quality of the grown AlN layers was drastically improved by post-growth annealing in mixed hydrogen, ammonia, and ...
Masataka Imura +8 more
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GaSb heterostructures grown by MOVPE
Journal of Crystal Growth, 1988 GaSb based heterostructures have been grown with a varying degree of strain in the GaSb layer as a result of the lattice mismatch. The GaSb/Ga1−xAlxSb system has ⩽0.65% mismatch making it potentially attractive for epitaxial growth. However, both the crystallinity and electrical quality of MOVPE grown Ga1−xAlxSb were found to be limited by carbon ...
Chidley, E +6 more
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Growth Temperature Dependency of High Al Content AlGaN Epilayers on AlN/Al2O3 Templates
Cumhuriyet Science Journal, 2018 In this work, MOVPE (Metalorganic Vapor PhaseEpitaxy) growth and characterization studies of high Al content AlGaN epilayersare reported. We utilize high resolutionX-ray diffraction (HRXRD) and atomic force microscope (AFM) techniques toanalyze the ...
İlkay Demir
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Detailed models of the MOVPE process
Journal of Crystal Growth, 1991 Abstract We present physicochemical models of the MOVPE process that describe two- and three-dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors. Emphasis is placed on understanding the development of fully three-dimensional flows and on the interaction between transport and ...
Jensen, K. F. +2 more
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Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE
AIP Advances, 2021 A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm.
Ta-Shun Chou +9 more
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