Results 11 to 20 of about 7,044 (217)

Cathodoluminescence Analysis of Defects and Grain Boundaries in Zn₃P₂ Thin Films Grown on Graphene by MOVPE and MBE. [PDF]

ACS Mater Au
Zn3P2 is a promising earth-abundant absorber for thin-film photovoltaics, yet its development is hindered by the lack of lattice-matched substrates, its incompatible thermal expansion coefficient, and a complex defect landscape.
Hagger T, Hassanzadeh M, Urbonavicius A, El Alouani A, Boureau V, Ganeeva G, Kawashima N, Lemerle R, Wodzislawski KA, Lehmann S, Dick KA, Botti S, Michon A, Fontcuberta I Morral A, Escobar Steinvall S.   +14 more
europepmc   +2 more sources

Robust reaction-transport models of MOVPE reactors

, 1998
A simple gas-phase and surface kinetic model describing the Metallorganic Vapor Phase Epitaxy (MOVPE) of GaAs from trimethyl-gallium (TMG) and arsine has been extracted from reported reaction mechanisms through sensitivity analysis.
Theodoropoulos, C.; id_orcid, Moffat, H. K., Mountziaris, T. J.   +2 more
core   +10 more sources

Scalable Emitter Photonic Integrated Circuits on an Open‐Access Indium Phosphide Foundry [PDF]

Nanophotonics
An open‐access indium phosphide platform with high‐speed 80 GBaud modulators delivers versatile emitter PICs. By showcasing a widely tunable optical frequency comb generator, a 672 MHz record low‐repetition‐rate mode‐locked extended cavity mode locked laser, and monolithic InP tunable laser with a narrow linewidth of 8.2 kHz, this work presents a ...
Y. Gupta D, Schoenau A, Boerma H, Keyvaninia S, Runge P.   +4 more
europepmc   +2 more sources

Local Droplet Etching‐Assisted Quantum Dot Epitaxy for Telecom C‐Band Quantum Light Emitters [PDF]

Nanophotonics
InGaAs quantum dots emitting in telecom wavelengths are fabricated using local droplet etching in a MOVPE growth process. The resulting low‐density emitters exhibit well‐defined optical properties, demonstrating the potential of this approach for developing quantum‐dot sources across the telecom wavelength range.
Połczyńska K, Wyborski P, Gawełczyk M, Kadkhodazadeh S, Munkhbat B, Sanguinetti S, Semenova E.   +6 more
europepmc   +2 more sources

Toward Precise n-Type Doping Control in MOVPE-Grown β-Ga₂O₃ Thin Films by Deep-Learning Approach

Crystals, 2021
In this work, we train a hybrid deep-learning model (fDNN, Forest Deep Neural Network) to predict the doping level measured from the Hall Effect measurement at room temperature and to investigate the doping behavior of Si dopant in both (100) and (010) β-
Ta-Shun Chou, Saud Bin Anooz, Raimund Grüneberg, Klaus Irmscher, Natasha Dropka, Jana Rehm, Thi Thuy Vi Tran, Wolfram Miller, Palvan Seyidov, Martin Albrecht, Andreas Popp   +10 more
doaj   +1 more source

Enhanced GaN Decomposition at MOVPE Pressures [PDF]

MRS Internet Journal of Nitride Semiconductor Research, 1998
GaN decomposition was studied above 800 °C in flowing H 2 and N 2 for pressures ranging from 10 to 700 torr. From careful weighings of the GaN film on sapphire before and after annealing, the rates for GaN decomposition, Ga surface accumulation, and Ga ...
D.D. Koleske, A.E. Wickenden, R.L. Henry, M.E. Twigg, J.C. Culbertson, R.J. Gorman   +5 more
openaire   +1 more source

GaSb heterostructures grown by MOVPE

Journal of Crystal Growth, 1988
GaSb based heterostructures have been grown with a varying degree of strain in the GaSb layer as a result of the lattice mismatch. The GaSb/Ga1−xAlxSb system has ⩽0.65% mismatch making it potentially attractive for epitaxial growth. However, both the crystallinity and electrical quality of MOVPE grown Ga1−xAlxSb were found to be limited by carbon ...
Chidley, E, Haywood, S, Mallard, R, Mason, N, Nicholas, R, Walker, P, Warburton, R   +6 more
openaire   +2 more sources

Fast homoepitaxial growth of (100) β-Ga2O3 thin films via MOVPE

AIP Advances, 2021
A high growth rate process above 1 µm/h was achieved for Si-doped (100) β-Ga2O3 homoepitaxial films grown via metalorganic vapor phase epitaxy (MOVPE) while maintaining high crystalline perfection up to a film thickness of 3 µm.
Ta-Shun Chou, Palvan Seyidov, Saud Bin Anooz, Raimund Grüneberg, Thi Thuy Vi Tran, Klaus Irmscher, Martin Albrecht, Zbigniew Galazka, Jutta Schwarzkopf, Andreas Popp   +9 more
doaj   +1 more source

Detailed models of the MOVPE process

Journal of Crystal Growth, 1991
Abstract We present physicochemical models of the MOVPE process that describe two- and three-dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors. Emphasis is placed on understanding the development of fully three-dimensional flows and on the interaction between transport and ...
Jensen, K. F., Fotiadis, D. I., Mountziaris, T. J.   +2 more
openaire   +2 more sources

1 eV Ga(NAsSb) grown by MOVPE using di-tertiary-butyl-arsano-amine (DTBAA)

AIP Advances, 2018
N containing lattice matched 1 eV materials, such as Ga(NAsSb) and (GaIn)(NAs), are discussed as potential solar subcells in a four junction solar cell alongside Ge, GaAs, and (GaIn)P, reaching theoretically conversion efficiencies of around 50 %.
E. Sterzer, O. Maßmeyer, L. Nattermann, K. Jandieri, S. Gupta, A. Beyer, B. Ringler, C. von Hänisch, W. Stolz, K. Volz   +9 more
doaj   +1 more source