Results 41 to 50 of about 6,729 (212)

Scalable Emitter Photonic Integrated Circuits on an Open‐Access Indium Phosphide Foundry

Nanophotonics, Volume 15, Issue 17, 11 September 2026.
An open‐access indium phosphide platform with high‐speed 80 GBaud modulators delivers versatile emitter PICs. By showcasing a widely tunable optical frequency comb generator, a 672 MHz record low‐repetition‐rate mode‐locked extended cavity mode locked laser, and monolithic InP tunable laser with a narrow linewidth of 8.2 kHz, this work presents a ...
Durvasa Y. Gupta, Axel Schoenau, Hendrik Boerma, Shahram Keyvaninia, Patrick Runge   +4 more
wiley   +1 more source

Device Simulation of Hole Transport in 233 nm Multiquantum Well AlGaN‐Based UV LED

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Deep‐UV LEDs suffer from low hole injection efficiency. In this work, electro optical simulations of AlGaN DUV LEDs with 6, 12, and 21 quantum wells, emitting at 233 nm, reveal efficient inter‐well hole transport within the active multiple quantum well region. The data are consistent with experimental findings.
Ibrahim Marouf, Friedhard Römer, Marcel Schilling, Franz Biebler, Jakob Höpfner, Massimo Grigoletto, Tim Wernicke, Michael Kneissl, Bernd Witzigmann   +8 more
wiley   +1 more source

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator

Advanced Electronic Materials
Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while ...
Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel   +3 more
doaj   +1 more source

Influence of the Epitaxial Growth Conditions of the Active Region on the Performance of Far‐Ultraviolet‐C Light‐Emitting Diodes

physica status solidi (a), Volume 223, Issue 17, 9 September 2026.
Far‐ultraviolet‐C light‐emitting diodes emitting at emission wavelengths of 226 or 233 nm with active regions epitaxially grown under different conditions are compared regarding their emission power, operation voltage, and lifetime. Based on these optimizations, 226 nm LEDs with an L70 lifetime larger than 250 h and an initial emission power of more ...
Tim Kolbe, Sylvia Hagedorn, Jens Rass, Hyun Kyong Cho, Jan Ruschel, Sven Einfeldt, Markus Weyers   +6 more
wiley   +1 more source

Growth of N-Polar (000$\stackrel{-}{1}$) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire

Crystals, 2023
We have systematically studied the growth of N-polar GaN on sapphire in metal–organic vapor phase epitaxy (MOVPE) on different misoriented (0001) sapphire substrates.
Markus Pristovsek, Itsuki Furuhashi, Pietro Pampili   +2 more
doaj   +1 more source

Band Alignment and Composition of the Buried TiO2/GaInP Interface

Advanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer, Sahar Shekarabi, Julius Kühne, Mohammad Amin Zare Pour, Kai Daniel Hanke, Chris Yannic Bohlemann, Juliane Koch, Oliver Bienek, Agnieszka Paszuk, Wolfram Jaegermann, Ian D. Sharp, Thomas Hannappel   +11 more
wiley   +1 more source

Phonon Polariton Confinement in Isotopically Pure MOVPE‐Grown BN Triangles

Advanced Optical Materials, Volume 14, Issue 31, August 21, 2026.
Phonon polaritons are confined in MOVPE‐grown isotopically pure 10BN$^{10}{\rm BN}$ triangles. The resonator modes are excited and mapped by near‐field spectroscopy. Through scanning a wide infrared frequency range and modeling, the polariton dispersion relation is retrieved.
Maximilian Scharpey, Oskar Schröer, Daniel Wigger, Lena Miler, Jakub Iwański, Andrzej Wysmołek, Johannes Binder, Iris Niehues   +7 more
wiley   +1 more source

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Scientific Reports, 2017
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire ...
Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden   +10 more
doaj   +1 more source

Optical properties of epitaxially grown GaN:Ge thin films

Optical Materials: X, 2022
To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted.
M. Buryi, V. Babin, T. Hubáček, V. Jarý, F. Hájek, K. Kuldová, Z. Remeš, A. Hospodková   +7 more
doaj   +1 more source

MOVPE - a dangerous dance?

III-Vs Review, 2004
AbstractAs MOVPE moves into a production line tool thanks to nitrides, all eyes turn to the silicon industry's approach to safety. But compound has its own peculiar problems, which emerged from the audience comments and questions at an expert panel talk.
openaire   +1 more source