Results 41 to 50 of about 7,044 (217)

MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates

Nanomaterials, 2022
The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates ...
Kazimieras Badokas, Arūnas Kadys, Dominykas Augulis, Jūras Mickevičius, Ilja Ignatjev, Martynas Skapas, Benjaminas Šebeka, Giedrius Juška, Tadas Malinauskas   +8 more
doaj   +1 more source

AI‐Guided Intrinsic and Extrinsic Photocorrosion Inhibition of III–V Semiconductors for Durable Photoelectrochemical Water Splitting

Small Science, Volume 6, Issue 11, November 2026.
This article presents a comprehensive framework for the AI‐guided photocorrosion inhibition of III–V photoelectrodes. It explores how machine learning accelerates material discovery through targeted strategies in AI‐guided composition, passivation, and growth.
Nafeesa Sarfraz, Ibrahim Khan, Muhammad Ibrar Ahmed, Muhammad Nawaz Tahir, Ajayan Vinu, Sanghyuk Wooh   +5 more
wiley   +1 more source

Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell

Energies, 2021
Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device.
Wojciech Dawidowski, Beata Ściana, Katarzyna Bielak, Miroslav Mikolášek, Jakub Drobný, Jarosław Serafińczuk, Iván Lombardero, Damian Radziewicz, Wojciech Kijaszek, Arpád Kósa, Martin Florovič, Jaroslav Kováč, Carlos Algora, L’ubica Stuchlíková   +13 more
doaj   +1 more source

MOVPE - a dangerous dance?

III-Vs Review, 2004
AbstractAs MOVPE moves into a production line tool thanks to nitrides, all eyes turn to the silicon industry's approach to safety. But compound has its own peculiar problems, which emerged from the audience comments and questions at an expert panel talk.
openaire   +1 more source

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, Volume 12, Issue 20, 26 October 2026.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator

Advanced Electronic Materials
Silicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while ...
Josef Stevanus Matondang, Nikhilendu Tiwary, Glenn Ross, Mervi Paulasto‐Kröckel   +3 more
doaj   +1 more source

Growth of N-Polar (000$\stackrel{-}{1}$) GaN in Metal–Organic Vapour Phase Epitaxy on Sapphire

Crystals, 2023
We have systematically studied the growth of N-polar GaN on sapphire in metal–organic vapor phase epitaxy (MOVPE) on different misoriented (0001) sapphire substrates.
Markus Pristovsek, Itsuki Furuhashi, Pietro Pampili   +2 more
doaj   +1 more source

InGaP/GaAs/InGaAs Multijunction Flexible Photovoltaics With Chemical Robustness and Radiation Hardness for Unassisted Electrocatalysis and Space Applications

Advanced Energy Materials, Volume 16, Issue 39, 21 October 2026.
A flexible InGaP/GaAs/InGaAs triple‐junction platform encapsulated with ultrathin glass enables unassisted electrocatalysis and space applications by providing robust protection against chemically aggressive and radiation‐rich environments. This work establishes a unified III–V multijunction photovoltaic platform that bridges space photovoltaics and ...
Sukkyu Hong, Seungwan Woo, Hoki Son, Hyun‐Beom Shin, Eungbeom Yeon, Jeongeun Mo, Daehwan Jung, Ho Won Jang, Ho Kwan Kang, Sung‐Min Lee, Won Jun Choi   +10 more
wiley   +1 more source

Flexible metal-semiconductor-metal device prototype on wafer-scale thick boron nitride layers grown by MOVPE

Scientific Reports, 2017
Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire ...
Xin Li, Matthew B. Jordan, Taha Ayari, Suresh Sundaram, Youssef El Gmili, Saiful Alam, Muhbub Alam, Gilles Patriarche, Paul L. Voss, Jean Paul Salvestrini, Abdallah Ougazzaden   +10 more
doaj   +1 more source

Optical properties of epitaxially grown GaN:Ge thin films

Optical Materials: X, 2022
To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted.
M. Buryi, V. Babin, T. Hubáček, V. Jarý, F. Hájek, K. Kuldová, Z. Remeš, A. Hospodková   +7 more
doaj   +1 more source