Results 41 to 50 of about 5,528 (229)
physica status solidi (b), Volume 263, Issue 4, April 2026.In this study, the structural properties of ion‐implanted GaP:N alloys with different nitrogen contents are analyzed before and after annealing. The results show lattice expansion with increasing N concentration due to implantation‐induced N–P split interstitials, unlike epitaxial GaPN. Annealing reduces distortion, demonstrating ion implantation as an
Md. Mamun‐Or‐Rashid +2 more
wiley +1 more source
Thermally Conductive Buried Aluminum Nitride for Next Generation Silicon‐on‐Insulator
Advanced Electronic MaterialsSilicon‐on‐insulator (SOI) substrates suffer from heat‐confinement and self‐heating effects due to silicon dioxide's low thermal conductivity. Polycrystalline Aluminum nitride (AlN) films can be a good replacement for effective heat dissipation while ...
Josef Stevanus Matondang +3 more
doaj +1 more source
Development of Sandwich AlN on PSS via Layered V/III Ratio Optimization
Cumhuriyet Science JournalThis study presents a comprehensive investigation into the effects of layer-by-layer V/III ratio optimization on the structural, optical, and morphological properties of AlN films grown on patterned sapphire substrates (PSS) using the PALE technique.
Ferhan Kübra Özbakır +1 more
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In‐Plane Targeted Positioning of Silica‐Coated PbS Quantum Dots Based on Size Differences
Advanced Quantum Technologies, Volume 9, Issue 4, April 2026.We demonstrate size‐selective placement of colloidal quantum dots (CQDs) with silica shells of different thicknesses by using a nanohole Si template. CQDs can act as single photon sources and absorbers. The silica shell thickness can be controlled independently of CQD energy states.
Hiroto Shirozume +3 more
wiley +1 more source
Growth of N-Polar (000
Crystals, 2023 We have systematically studied the growth of N-polar GaN on sapphire in metal–organic vapor phase epitaxy (MOVPE) on different misoriented (0001) sapphire substrates.
Markus Pristovsek +2 more
doaj +1 more source
Scientific Reports, 2017 Practical boron nitride (BN) detector applications will require uniform materials over large surface area and thick BN layers. To report important progress toward these technological requirements, 1~2.5 µm-thick BN layers were grown on 2-inch sapphire ...
Xin Li +10 more
doaj +1 more source
Quantum Emitters in Hexagonal Boron Nitride: Principles, Engineering and Applications
Advanced Functional Materials, Volume 36, Issue 20, 9 March 2026.Quantum emitters in hexagonal boron nitride have emerged as a promising candidate for quantum information science. This review examines the fundamentals of these quantum emitters, including their level structures, defect engineering, and their possible chemical structures.
Thi Ngoc Anh Mai +8 more
wiley +1 more source
Optical properties of epitaxially grown GaN:Ge thin films
Optical Materials: X, 2022 To better understand the scintillation properties of gallium nitride, a detailed characterization of Metal Organic Vapour Phase Epitaxy (MOVPE) grown GaN layers doped with Ge is conducted.
M. Buryi +7 more
doaj +1 more source
Advanced Functional Materials, Volume 36, Issue 21, 12 March 2026.The chemical composition and band alignment are systematically investigated at the TiO2/InP heterointerface. Thin TiO2 films are deposited by ALD on atomically ordered, P‐terminated p‐InP(100). By combining UPS, XPS, and ab initio molecular dynamics, the atomistic structure and electronic alignment are revealed.
Mohammad Amin Zare Pour +11 more
wiley +1 more source
Simulation of Nitride Semiconductor MOVPE
, 2020 This article seeks to help readers understand the MOVPE growth of nitride semiconductors as a part of science. MOVPE is the abbreviation for metalorganic vapor-phase epitaxy. Therefore, the precursors used are metalorganic gases and ammonia.
Ohkawa, Kazuhiro, Kazuhiro Ohkawa
core +1 more source