Results 41 to 50 of about 11,730 (206)
Advanced AlGaAs/GaAs Heterostructures Grown by MOVPE
Crystals, 2019 AlGaAs/GaAs heterostructures are the base of many semiconductor devices. The fabrication of new types of devices demands heterostructures with special features, such as large total thickness (~20 μm), ultrathin layers (~1 nm), high repeatability (up
Maxim A. Ladugin +7 more
doaj +1 more source
Detailed models of the MOVPE process
Journal of Crystal Growth, 1991 Abstract We present physicochemical models of the MOVPE process that describe two- and three-dimensional transport phenomena as well as gas-phase and surface reactions underlying the growth of compound semiconductors. Emphasis is placed on understanding the development of fully three-dimensional flows and on the interaction between transport and ...
Jensen, K. F. +2 more
openaire +2 more sources
Aharonov-Bohm Oscillations in Photoluminescence from Charged Exciton in Quantum Tubes [PDF]
, 2007 The oscillation of photoluminescence peak energies is observed in InAs quantum tubes depending on the magnetic flux through the tube. The oscillation is shown to be due to the Aharonov-Bohm effect of a charged exciton in a quantum tube.
Asgari +24 more
core +2 more sources
Applied Physics ExpressAlGaN quantum wells (QWs) emitting at 265 nm were fabricated on face-to-face annealed sputter-deposited AlN (FFA Sp-AlN) templates with n-AlGaN and different homoepitaxial AlN thicknesses (200–2000 nm) by metalorganic vapor phase epitaxy (MOVPE). Thicker
Ryota Akaike +6 more
doaj +1 more source
MOVPE Growth of GaN via Graphene Layers on GaN/Sapphire Templates
Nanomaterials, 2022 The remote epitaxy of GaN epilayers on GaN/sapphire templates was studied by using different graphene interlayer types. Monolayer, bilayer, double-stack of monolayer, and triple-stack of monolayer graphenes were transferred onto GaN/sapphire templates ...
Kazimieras Badokas +8 more
doaj +1 more source
The role of hydrostatic stress in determining the bandgap of InN epilayers
, 2007 We establish a correlation between the internal stress in InN epilayers and their optical properties such as the measured absorption band edge and photoluminescence emission wavelength.
Arora, B. M. +7 more
core +1 more source
Impact of Polarization Charges on Threshold Voltage and Band Offset in AlGaN/GaN Heterostructures
physica status solidi (a), Volume 223, Issue 7, 7 April 2026.The threshold voltage for the two‐dimensional electron gas of GaN‐based heterostructures is analyzed by considering the thickness of the polarization charge region at a semiconductor surface and interface. The proposed model gives the threshold voltage agreed with experimental results.
Tetsuya Suemitsu +2 more
wiley +1 more source
Analysis of Current Transport Mechanism in AP-MOVPE Grown GaAsN p-i-n Solar Cell
Energies, 2021 Basic knowledge about the factors and mechanisms affecting the performance of solar cells and their identification is essential when thinking of future improvements to the device.
Wojciech Dawidowski +13 more
doaj +1 more source
Surface organization of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy
, 2012 We present a systematic study of the morphology of homoepitaxial InP films grown by metalorganic vapor-phase epitaxy which are imaged with ex situ atomic force microscopy.
Gocalinska, A. +3 more
core +1 more source
Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters [PDF]
, 2018 We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the ...
Baba, Răzvan +3 more
core +1 more source