Results 1 to 10 of about 142,252 (246)

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

open access: yesNanomaterials, 2023
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods.
Demid S. Abramkin   +10 more
doaj   +1 more source

STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)N and (8 × 8) Structures in the SiN/Si(111) System

open access: yesCrystals, 2022
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111 ...
Vladimir Mansurov   +5 more
doaj   +1 more source

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

open access: yesNanomaterials, 2022
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov   +12 more
doaj   +1 more source

Size-Dependent Electroluminescence and Current-Voltage Measurements of Blue InGaN/GaN µLEDs down to the Submicron Scale

open access: yesNanomaterials, 2021
Besides high-power light-emitting diodes (LEDs) with dimensions in the range of mm, micro-LEDs (μLEDs) are increasingly gaining interest today, motivated by the future applications of μLEDs in augmented reality displays or for nanometrology and sensor ...
Stefan Wolter   +11 more
doaj   +1 more source

Lattice modulation strategies for 2D material assisted epitaxial growth

open access: yesNano Convergence, 2023
As an emerging single crystals growth technique, the 2D-material-assisted epitaxy shows excellent advantages in flexible and transferable structure fabrication, dissimilar materials integration, and matter assembly, which offers opportunities for novel ...
Qi Chen   +7 more
doaj   +1 more source

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

open access: yesNanomaterials, 2020
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature.
Artur Tuktamyshev   +6 more
doaj   +1 more source

Unveiling the mechanism of remote epitaxy of crystalline semiconductors on 2D materials-coated substrates

open access: yesNano Convergence, 2023
Remote epitaxy has opened novel opportunities for advanced manufacturing and heterogeneous integration of two-dimensional (2D) materials and conventional (3D) materials.
Xuejing Wang   +3 more
doaj   +1 more source

Properties of AlN/GaN Heterostructures Grown at Low Growth Temperatures with Ammonia and Dimethylhydrazine

open access: yesCrystals, 2021
The integration of different electronic materials systems together has gained increasing interest in recent years, with the III-nitrides being a favorable choice for a variety of electronic applications.
Caroline E. Reilly   +7 more
doaj   +1 more source

Induced Ferromagnetism in Epitaxial Uranium Dioxide Thin Films

open access: yesAdvanced Science, 2022
Actinide materials have various applications that range from nuclear energy to quantum computing. Most current efforts have focused on bulk actinide materials.
Yogesh Sharma   +15 more
doaj   +1 more source

Control of InGaAs facets using metal modulation epitaxy (MME) [PDF]

open access: yes, 2014
Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features.
Baraskar, Ashish K.   +8 more
core   +3 more sources

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