Results 1 to 10 of about 53,075 (307)
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AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene
Nanotechnology, 2013Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001).
Godel, Florian +8 more
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Epitaxial graphene on ruthenium
Nature Materials, 2008Graphene has been used to explore the fascinating electronic properties of ideal two-dimensional carbon, and shows great promise for quantum device architectures. The primary method for isolating graphene, micromechanical cleavage of graphite, is difficult to scale up for applications.
Peter W, Sutter +2 more
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Kristall und Technik, 1973
AbstractCd is deposited on air cleaved and annealed muscovite. The Cd films were seeded by Ag. Then Cd grows epitaxially with its (0001)‐planes parallel to the (001)‐plane of muscovite.
P Dobbeet, H . - G Neumann
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AbstractCd is deposited on air cleaved and annealed muscovite. The Cd films were seeded by Ag. Then Cd grows epitaxially with its (0001)‐planes parallel to the (001)‐plane of muscovite.
P Dobbeet, H . - G Neumann
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Local epitaxy and lateral epitaxial overgrowth of SiC
Journal of Crystal Growth, 2001Abstract Selective epitaxial growth and lateral overgrowth of SiC using a graphite mask is reported in this paper. Selective area SiC growth is accomplished using physical vapor transport (PVT) epitaxy. The growth was carried out on 4 H and 6H-SiC wafers on- and 8° off-oriented from the basal plane in the 〈1 1 2 0〉 direction.
Y Khlebnikov +3 more
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2020
The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini +2 more
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The vapor phase epitaxy has been developed to prepare the main semiconductor compounds of the nitrides. Vapor phase epitaxy uses a gaseous phase composed of elements of the materials to be obtained. At a fixed temperature the vapor phase precursors decompose and react at the substrate surface, giving the desired layer. Vapor phase epitaxy was initially
Giovanni Attolini +2 more
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Physical Review Letters, 2000
Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions.
X H, Liu, F M, Ross, K W, Schwarz
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Dislocation networks observed in CoSi (2) islands grown epitaxially on Si are compared with the results of dislocation-dynamics calculations. The calculations make use of the fact that image forces play a relatively minor role compared to line tension forces and dislocation-dislocation interactions.
X H, Liu, F M, Ross, K W, Schwarz
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Advanced epitaxial growth techniques: atomic layer epitaxy and migration-enhanced epitaxy
Journal of Crystal Growth, 1999New epitaxial growth techniques based on modulated source supplies such as atomic layer epitaxy (ALE) and migration-enhanced epitaxy (MEE) have been developed to grow atomically controlled surfaces and interfaces of compound semiconductors. ALE is based on repeated adsorption saturation of constituent atoms on the substrate surface which guarantees ...
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Thin Solid Films, 1984
This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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This review discusses the development and present status of atomic layer epitaxy (ALE), a technology for growing layers of crystalline and polycrystalline materials one atomic layer at a time. Atomic layer epitaxy was originally developed to meet the needs of improved ZnS thin films and dielectric thin films for electroluminescent thin film display ...
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Journal of Crystal Growth, 1975
This paper is intended to give an overview of the applications of epitaxial growth to photovoltaic solar cells. In order to introduce those operating parameters which can be improved by epitaxy, we begin by describing how a solar cell functions. Then we discuss the contribution of epitaxial growth to higher cell performance through improved crystalline
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This paper is intended to give an overview of the applications of epitaxial growth to photovoltaic solar cells. In order to introduce those operating parameters which can be improved by epitaxy, we begin by describing how a solar cell functions. Then we discuss the contribution of epitaxial growth to higher cell performance through improved crystalline
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