Results 1 to 10 of about 11,104 (255)

Growth of GaAs Epitaxial Microcrystals by Droplet Epitaxy.

Bulletin of the Japan Institute of Metals, 1993
openaire   +2 more sources

Highly Oriented Epitaxial Hexagonal Boron Nitride Multilayers on High-Temperature-Resistant Single-Crystal Aluminum Nitride (0001). [PDF]

Adv Sci (Weinh)
Yang X, Pristovsek M, Nitta S, Honda Y, Ohtake A, Sakuma Y, Hiroto T, Ishida T, Ikezawa M, Guo Q, Amano H.   +10 more
europepmc   +1 more source

Interfacial Charge Transfer in Lead Sulfide/Cadmium Sulfide Quantum Dot-Monolayer Molybdenum Disulfide Heterostructures. [PDF]

ACS Omega
Li M, Fron E, Cotlet M.
europepmc   +1 more source

Growth of rhombohedral-stacked single-crystal WS₂/MoS₂ vertical heterostructures. [PDF]

Nat Commun
Chen J, Guo Y, Zhang Y, Li Z, Guo Q, Yang Q, Li K, Zhang Y, Zhang B, Hu Y, Cai Y, Hu Z, Cheng Q, Liu X, Liu M, Chen J, Yuan Q, Liu K, Xu X.   +18 more
europepmc   +1 more source

Characterization of Complex Stacking of Semiconductors Through Near Field Imaging and Spectroscopy. [PDF]

Adv Mater
Tailpied L, Gureghian C, Fossard F, Mérot JS, Rodriguez JB, Flores FG, Vincent G, Taliercio T, Fix B.   +8 more
europepmc   +1 more source

Monolithic electro-optic platform on silicon with bandwidth of 100 GHz and beyond. [PDF]

Nat Commun
Steckler D, Lischke S, Yamamoto Y, Wen WC, Peczek A, Beyer J, Kroh A, Fursenko O, Bärwolf F, Marschmeyer S, Kulse P, Wolansky D, Zimmermann L.   +12 more
europepmc   +1 more source

Epitaxial Silicides

MRS Proceedings, 1981
The formation and structures of epitaxial CoSi2, NiSi2, Pd2 Si and PtSi films on silicon are reviewed. Polycrystalline films of reasonable epitaxial quality can be grown with sharp interfaces on Si(111) by conventional deposition and heating techniques. The interfaces on (100) substrates, however, are faceted.
R.T. Tung, J.M. Poate, J.C. Bean, J.M. Gibson, D.C. Jacobson   +4 more
openaire   +1 more source

Epitaxial strain and epitaxial bending

Surface Science, 1996
The relation between the curvatures of an epitaxial film-substrate system and the epitaxial strain in the film is generalized to an arbitrary substrate surface of an arbitrary crystal structure. The determination of elastic constants of epitaxial film material from curvature measurements is compared with the determination from bulk perpendicular strain
openaire   +1 more source

Molecular-Beam Epitaxy

AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
openaire   +2 more sources

Epitaxy of MgO magnetic tunnel barriers on epitaxial graphene

Nanotechnology, 2013
Epitaxial growth of electrodes and tunnel barriers on graphene is one of the main technological bottlenecks for graphene spintronics. In this paper, we demonstrate that MgO(111) epitaxial tunnel barriers, one of the prime candidates for spintronic application, can be grown by molecular beam epitaxy on epitaxial graphene on SiC(0001).
Godel, Florian, Pichonat, Emmanuelle, Vignaud, Dominique, Majjad, Hicham, Metten, Dominik, Henry, Yves, Berciaud, Stéphane, Dayen, Jean-Francois, Halley, David   +8 more
openaire   +3 more sources