Results 1 to 10 of about 82,579 (245)

Molecular Beam Epitaxy of LiMnAs [PDF]

Journal of Crystal Growth, 2010
We report on the molecular beam epitaxy (MBE) growth of high crystalline quality LiMnAs. The introduction of a group-I alkali metal element Li with flux comparable to fluxes of Mn and As has not caused any apparent damage to the MBE system after as many ...
Cukr, M., Holy, V., Horodyska, P., Jungwirth, T., Marti, X., Nemec, P., Novak, V., Soban, Z.   +7 more
core   +2 more sources

Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots [PDF]

Nanomaterials, 2023
Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots [...]
Xiaohui Li, Qian Xu, Ziyang Zhang
doaj   +2 more sources

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

APL Materials, 2017
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Patrick B. Marshall, Honggyu Kim, Kaveh Ahadi, Susanne Stemmer   +3 more
doaj   +3 more sources

A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

Science and Technology of Advanced Materials, 2015
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform.
Lucie Mazet, Sang Mo Yang, Sergei V Kalinin, Sylvie Schamm-Chardon, Catherine Dubourdieu   +4 more
doaj   +2 more sources

Analyzing Structural Optical and Phonon Characteristics of Plasma-Assisted Molecular-Beam Epitaxy-Grown InN/Al₂O₃ Epifilms. [PDF]

Nanomaterials (Basel)
Talwar DN, Chen LC, Chen KH, Feng ZC.
europepmc   +3 more sources

STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)_N and (8 × 8) Structures in the SiN/Si(111) System

Crystals, 2022
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111 ...
Vladimir Mansurov, Timur Malin, Sergey Teys, Victor Atuchin, Denis Milakhin, Konstantin Zhuravlev   +5 more
doaj   +1 more source

Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

Nanomaterials, 2022
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii   +12 more
doaj   +1 more source

Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

Nanomaterials, 2023
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods.
Demid S. Abramkin, Mikhail O. Petrushkov, Dmitrii B. Bogomolov, Eugeny A. Emelyanov, Mikhail Yu. Yesin, Andrey V. Vasev, Alexey A. Bloshkin, Eugeny S. Koptev, Mikhail A. Putyato, Victor V. Atuchin, Valery V. Preobrazhenskii   +10 more
doaj   +1 more source

An Intelligent Temperature Control Algorithm of Molecular Beam Epitaxy System Based on the Back-Propagation Neural Network

IEEE Access, 2022
Temperature control is a critical aspect for the semiconductor material growth of the Molecular Beam Epitaxy system. The growth rate depends on the temperature of the beam source, and the quality of epi-layers heavily depends on the temperature of the ...
Guoqing Wu, Yang Wang, Qian Gong, Li Li, Xiaoyan Wu   +4 more
doaj   +1 more source

Molecular beam epitaxy of KTaO3

Journal of Vacuum Science & Technology A, 2023
Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high-quality KTaO3 thin films by molecular-beam epitaxy.
Tobias Schwaigert, Salva Salmani-Rezaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi   +8 more
openaire   +2 more sources