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Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots [PDF]

Nanomaterials, 2023
Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots [...]
Xiaohui Li, Qian Xu, Ziyang Zhang
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A review of molecular beam epitaxy of ferroelectric BaTiO3 films on Si, Ge and GaAs substrates and their applications

Science and Technology of Advanced Materials, 2015
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform.
Lucie Mazet, Sang Mo Yang, Sergei V Kalinin, Sylvie Schamm-Chardon, Catherine Dubourdieu   +4 more
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STM/STS Study of the Density of States and Contrast Behavior at the Boundary between (7 × 7)_N and (8 × 8) Structures in the SiN/Si(111) System

Crystals, 2022
The origin of the contrast appearing in STM images at the boundary between diverse ordered structures is studied using the example of two structures, (7 × 7)N and (8 × 8), formed in the system of a two-dimensional silicon nitride layer on the Si(111 ...
Vladimir Mansurov, Timur Malin, Sergey Teys, Victor Atuchin, Denis Milakhin, Konstantin Zhuravlev   +5 more
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Dislocation Filter Based on LT-GaAs Layers for Monolithic GaAs/Si Integration

Nanomaterials, 2022
The use of low-temperature (LT) GaAs layers as dislocation filters in GaAs/Si heterostructures (HSs) was investigated in this study. The effects of intermediate LT-GaAs layers and of the post-growth and cyclic in situ annealing on the structural ...
Mikhail O. Petrushkov, Demid S. Abramkin, Eugeny A. Emelyanov, Mikhail A. Putyato, Oleg S. Komkov, Dmitrii D. Firsov, Andrey V. Vasev, Mikhail Yu. Yesin, Askhat K. Bakarov, Ivan D. Loshkarev, Anton K. Gutakovskii, Victor V. Atuchin, Valery V. Preobrazhenskii   +12 more
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Structural Properties and Energy Spectrum of Novel GaSb/AlP Self-Assembled Quantum Dots

Nanomaterials, 2023
In this work, the formation, structural properties, and energy spectrum of novel self-assembled GaSb/AlP quantum dots (SAQDs) were studied by experimental methods.
Demid S. Abramkin, Mikhail O. Petrushkov, Dmitrii B. Bogomolov, Eugeny A. Emelyanov, Mikhail Yu. Yesin, Andrey V. Vasev, Alexey A. Bloshkin, Eugeny S. Koptev, Mikhail A. Putyato, Victor V. Atuchin, Valery V. Preobrazhenskii   +10 more
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An Intelligent Temperature Control Algorithm of Molecular Beam Epitaxy System Based on the Back-Propagation Neural Network

IEEE Access, 2022
Temperature control is a critical aspect for the semiconductor material growth of the Molecular Beam Epitaxy system. The growth rate depends on the temperature of the beam source, and the quality of epi-layers heavily depends on the temperature of the ...
Guoqing Wu, Yang Wang, Qian Gong, Li Li, Xiaoyan Wu   +4 more
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Molecular beam epitaxy of KTaO3

Journal of Vacuum Science & Technology A, 2023
Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high-quality KTaO3 thin films by molecular-beam epitaxy.
Tobias Schwaigert, Salva Salmani-Rezaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi   +8 more
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Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories

Nanomaterials, 2022
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories.
Demid S. Abramkin, Victor V. Atuchin
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Molecular beam epitaxy of LiMnAs [PDF]

Journal of Crystal Growth, 2011
8 pages, 5 ...
Novak, V., Cukr, M., Soban, Z., Jungwirth, T., Marti, X., Holy, V., Horodyska, P., Nemec, P.   +7 more
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Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing

AIP Advances, 2023
Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit.
Chuqi Yi, Zhuangyi Zhou, Mattias Klaus Juhl, Jingnan Tong, Kean Chern Fong, Fiacre Emile Rougieux, Stephen Bremner   +6 more
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