Results 11 to 20 of about 1,182 (109)

Molecular beam epitaxy of antiperovskite oxides

APL Materials, 2022
Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
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Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF₂ on Si(111)

Materials Proceedings, 2023
The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed.
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennady N. Kamaev, Vladimir A. Volodin, Natalia P. Stepina, Aigul F. Zinovieva, Vladimir A. Zinovyev   +6 more
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GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

Crystals, 2022
Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal ...
Evgeniy Klimov, Aleksey Klochkov, Sergey Pushkarev, Galib Galiev, Rinat Galiev, Nataliya Yuzeeva, Aleksey Zaitsev, Yury Volkovsky, Alexey Seregin, Pavel Prosekov   +9 more
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Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy

APL Materials, 2021
Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the
Joseph Roth, Tatiana Kuznetsova, Leixin Miao, Alexej Pogrebnyakov, Nasim Alem, Roman Engel-Herbert   +5 more
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Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

Nanomaterials, 2023
GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111)
Karol Olszewski, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka, Zbigniew R. Zytkiewicz   +5 more
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Hybrid molecular beam epitaxy of germanium-based oxides

Communications Materials, 2022
Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.
Fengdeng Liu, Tristan K. Truttmann, Dooyong Lee, Bethany E. Matthews, Iflah Laraib, Anderson Janotti, Steven R. Spurgeon, Scott A. Chambers, Bharat Jalan   +8 more
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Molecular Beam Epitaxy Growth of Quantum Wires and Quantum Dots

Nanomaterials, 2023
Molecular beam epitaxy technology has a significant advantage in semiconductor technology due to its strong controllability, especially for the preparation of materials such as quantum wires and quantum dots [...]
Xiaohui Li, Qian Xu, Ziyang Zhang
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Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport

Nanomaterials, 2022
A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires.
Vladimir G. Dubrovskii
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Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

APL Materials, 2016
The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex
A. T. Bollinger, J. Wu, I. Božović
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Wafer-scale epitaxial modulation of quantum dot density

Nature Communications, 2022
Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.
N. Bart, C. Dangel, P. Zajac, N. Spitzer, J. Ritzmann, M. Schmidt, H. G. Babin, R. Schott, S. R. Valentin, S. Scholz, Y. Wang, R. Uppu, D. Najer, M. C. Löbl, N. Tomm, A. Javadi, N. O. Antoniadis, L. Midolo, K. Müller, R. J. Warburton, P. Lodahl, A. D. Wieck, J. J. Finley, A. Ludwig   +23 more
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