Results 11 to 20 of about 3,923,319 (288)

Molecular-Beam Epitaxy

AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
Pamplin, Brian R
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Molecular Beam Epitaxy

, 1991
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
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Growth and Characterisation of GaAsBi [PDF]

, 2013
This thesis reports the optical and structural properties of GaAs(1-x)Bi(x) alloys grown on GaAs by Molecular Beam Epitaxy (MBE). The photoluminescence (PL) of a GaAs(0.97)Bi(0.03) alloy was measured over a wide range of temperatures and excitation ...
Mohmad, Abdul Rahman Bin
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Molecular beam epitaxy of KTaO3

Journal of Vacuum Science & Technology A, 2023
Strain-engineering is a powerful means to tune the polar, structural, and electronic instabilities of incipient ferroelectrics. KTaO3 is near a polar instability and shows anisotropic superconductivity in electron-doped samples. Here, we demonstrate growth of high-quality KTaO3 thin films by molecular-beam epitaxy.
Tobias Schwaigert, Salva Salmani-Rezaie, Matthew R. Barone, Hanjong Paik, Ethan Ray, Michael D. Williams, David A. Muller, Darrell G. Schlom, Kaveh Ahadi   +8 more
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Molecular beam epitaxy of LiMnAs [PDF]

Journal of Crystal Growth, 2011
8 pages, 5 ...
Novak, V., Cukr, M., Soban, Z., Jungwirth, T., Marti, X., Holy, V., Horodyska, P., Nemec, P.   +7 more
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Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF₂ on Si(111)

Materials Proceedings, 2023
The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed.
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennady N. Kamaev, Vladimir A. Volodin, Natalia P. Stepina, Aigul F. Zinovieva, Vladimir A. Zinovyev   +6 more
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GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

Crystals, 2022
Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal ...
Evgeniy Klimov, Aleksey Klochkov, Sergey Pushkarev, Galib Galiev, Rinat Galiev, Nataliya Yuzeeva, Aleksey Zaitsev, Yury Volkovsky, Alexey Seregin, Pavel Prosekov   +9 more
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Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy

APL Materials, 2021
Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the
Joseph Roth, Tatiana Kuznetsova, Leixin Miao, Alexej Pogrebnyakov, Nasim Alem, Roman Engel-Herbert   +5 more
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Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

Nanomaterials, 2023
GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111)
Karol Olszewski, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka, Zbigniew R. Zytkiewicz   +5 more
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In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth

, 2022
S.18-22In situ hydrogen radical treatment in a processing chamber attached to a molecular beam epitaxy (MBE) system is successfully applied for the native oxide removal from AlGaInAs surfaces exposed to air prior to MBE regrowth.
Bochnia, R., Griebenow, U., Kunzel, H., Bottcher, J., Harde, P., Hase, A.   +5 more
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