Results 11 to 20 of about 82,642 (308)
Novel InGaSb/AlP Quantum Dots for Non-Volatile Memories
Non-volatile memories based on the flash architecture with self-assembled III–V quantum dots (SAQDs) used as a floating gate are one of the prospective directions for universal memories.
Demid S. Abramkin, Victor V. Atuchin
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Nature of contaminants introduced in silicon wafers during molecular beam epitaxy chamber annealing
Epitaxial monolithic III–V/Si tandem solar cells are one of the most promising technologies to be adopted by the industry after the efficiency of the current market dominating single junction silicon solar cell saturates at its fundamental limit.
Chuqi Yi +6 more
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Atomic layer epitaxy of kagome magnet Fe3Sn2 and Sn-modulated heterostructures
Magnetic materials with kagome crystal structure exhibit rich physics, such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or
Shuyu Cheng +6 more
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Molecular beam epitaxy of antiperovskite oxides
Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
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The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed.
Anatoly V. Dvurechenskii +6 more
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GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates
Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal ...
Evgeniy Klimov +9 more
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Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy
Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the
Joseph Roth +5 more
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Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers
GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111)
Karol Olszewski +5 more
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Hybrid molecular beam epitaxy of germanium-based oxides
Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.
Fengdeng Liu +8 more
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Observation of confined propagation in Bragg waveguides [PDF]
A new type of waveguiding in a slab dielectric bounded on one side by air and on the other by a periodic layered medium (grown by molecular beam epitaxy) has been ...
Cho, A. Y., Yariv, A., Yeh, P.
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