Results 11 to 20 of about 29,757 (249)

Atomic layer epitaxy of kagome magnet Fe3Sn2 and Sn-modulated heterostructures

APL Materials, 2022
Magnetic materials with kagome crystal structure exhibit rich physics, such as frustrated magnetism, skyrmion formation, topological flat bands, and Dirac/Weyl points. Until recently, most studies on kagome magnets have been performed on bulk crystals or
Shuyu Cheng, Binbin Wang, Igor Lyalin, Núria Bagués, Alexander J. Bishop, David W. McComb, Roland K. Kawakami   +6 more
doaj   +1 more source

Molecular beam epitaxy of antiperovskite oxides

APL Materials, 2022
Antiperovskites, or inverse perovskites, have recently emerged as a material class with a plethora of promising electronic properties. This Perspective describes the molecular beam epitaxy (MBE) growth of oxide antiperovskites Sr3PbO and Sr3SnO.
H. Nakamura, D. Huang, H. Takagi
doaj   +1 more source

Electron-Beam Radiation Effects in Multilayer Structures Grown with the Periodical Deposition of Si and CaF₂ on Si(111)

Materials Proceedings, 2023
The formation of CaSi2 films on Si(111) with the molecular-beam epitaxy (MBE) of CaF2 under fast electron-beam irradiation was investigated. The method of a high-planarity CaSi2 film synthesis assisted by electron-beam irradiation was developed.
Anatoly V. Dvurechenskii, Aleksey V. Kacyuba, Gennady N. Kamaev, Vladimir A. Volodin, Natalia P. Stepina, Aigul F. Zinovieva, Vladimir A. Zinovyev   +6 more
doaj   +1 more source

GaAs Molecular Beam Epitaxy on (110)-Oriented Substrates

Crystals, 2022
Molecular-beam epitaxial growth of Si-doped GaAs single-crystal layers on (110)-oriented GaAs substrates has been studied. The surface morphology of grown films was analyzed by scanning electron microscopy and atomic force microscopy, and the crystal ...
Evgeniy Klimov, Aleksey Klochkov, Sergey Pushkarev, Galib Galiev, Rinat Galiev, Nataliya Yuzeeva, Aleksey Zaitsev, Yury Volkovsky, Alexey Seregin, Pavel Prosekov   +9 more
doaj   +1 more source

Self-regulated growth of [111]-oriented perovskite oxide films using hybrid molecular beam epitaxy

APL Materials, 2021
Exotic material properties and topological nontrivial surface states have been theoretically predicted to emerge in [111]-oriented perovskite layers. The realization of such [111]-oriented perovskite superlattices has been found challenging, and even the
Joseph Roth, Tatiana Kuznetsova, Leixin Miao, Alexej Pogrebnyakov, Nasim Alem, Roman Engel-Herbert   +5 more
doaj   +1 more source

Geometrical Selection of GaN Nanowires Grown by Plasma-Assisted MBE on Polycrystalline ZrN Layers

Nanomaterials, 2023
GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111)
Karol Olszewski, Marta Sobanska, Vladimir G. Dubrovskii, Egor D. Leshchenko, Aleksandra Wierzbicka, Zbigniew R. Zytkiewicz   +5 more
doaj   +1 more source

In-situ Al0.24Ga0.24In0.52As surface cleaning procedure using hydrogen radicals for molecular beam epitaxy regrowth

, 2022
S.18-22In situ hydrogen radical treatment in a processing chamber attached to a molecular beam epitaxy (MBE) system is successfully applied for the native oxide removal from AlGaInAs surfaces exposed to air prior to MBE regrowth.
Bochnia, R., Griebenow, U., Kunzel, H., Bottcher, J., Harde, P., Hase, A.   +5 more
core   +1 more source

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]

, 2014
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A., Benjamin J Robinson, Fal'ko, Vladimir; id_orcid, Ana M Sanchez, Sánchez, Ana M., Ezekiel A Anyebe, Oleg Kolosov, Veal, T. D. (Tim D.), Zhukov, Alexander, Anyebe, Ezekiel, Zhuang, Qiandong, Veal, Tim D, Robinson, Benjamin, Zhuang, Qian D, Robinson, Benjamin J, Mohana K Rajpalke, Anyebe, Ezekiel A, Rajpalke, Mohana K, Veal, Tim D., Fal?ko, Vladimir, Zhuang, Qian D., Sanchez, A. M., Robinson, Benjamin J., Rajpalke, Mohana K., Anderson, Frazer, Falko, Vladimir, Frazer Anderson, Fal’ko, Vladimir, Vladimir Fal’ko, Tim D Veal, Alexander Zhukov, Qian D Zhuang, Kolosov, Oleg, Sanchez, Ana M   +33 more
core   +1 more source

Hybrid molecular beam epitaxy of germanium-based oxides

Communications Materials, 2022
Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.
Fengdeng Liu, Tristan K. Truttmann, Dooyong Lee, Bethany E. Matthews, Iflah Laraib, Anderson Janotti, Steven R. Spurgeon, Scott A. Chambers, Bharat Jalan   +8 more
doaj   +1 more source

Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy [PDF]

, 2012
The image processing technique of columnratiomapping was applied to aberration-corrected high angle annular dark field (HAADF) images of shortperiod MBE (molecular beam epitaxy) grown InAs/GaAssuperlattices. This method allowed the Indium distribution to
Finnie, M., Robb, P.D., Craven, A.J.
core   +1 more source