Results 41 to 50 of about 29,757 (249)

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

open access: yesCrystals, 2016
Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect.
Chad A. Stephenson   +4 more
doaj   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

open access: yesAdvanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng   +11 more
wiley   +1 more source

Growth and Characterisation of GaAsBi [PDF]

open access: yes, 2013
This thesis reports the optical and structural properties of GaAs(1-x)Bi(x) alloys grown on GaAs by Molecular Beam Epitaxy (MBE). The photoluminescence (PL) of a GaAs(0.97)Bi(0.03) alloy was measured over a wide range of temperatures and excitation ...
Mohmad, Abdul Rahman Bin
core  

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

open access: yesAdvanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji   +15 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

open access: yesAdvanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci   +12 more
wiley   +1 more source

Van der Waals Chromium Telluride Thin Films Prepared by Hybrid Pulsed Laser Deposition With Tunable Magnetism

open access: yesAdvanced Materials Interfaces, EarlyView.
Epitaxial Cr(1+δ)Te2 thin films were synthesized via hybrid Pulsed Laser Deposition (PLD) that combined Molecular Beam Epitaxy (MBE) techniques with PLD. Control of the Cr intercalation, δ, enabled modulation of magnetic anisotropy, Curie temperature, and transport properties.
Pia Henning   +3 more
wiley   +1 more source

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

open access: yesAPL Materials, 2017
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Patrick B. Marshall   +3 more
doaj   +1 more source

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

open access: yesNature Communications, 2021
The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature.
Xiaoqian Zhang   +16 more
doaj   +1 more source

Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment

open access: yesAdvanced Materials Interfaces, EarlyView.
Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley   +1 more source

Epitaxial Growth of BaBiO3 Thin Films on SrTiO3(001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations

open access: yesCrystals
BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed   +2 more
doaj   +1 more source

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