Results 41 to 50 of about 3,923,319 (288)

Application and research progress of flux monitoring technology by atomic absorption spectroscopy in molecular beam epitaxy

open access: yesGongneng cailiao yu qijian xuebao
Based on a brief review of the development history of atomic absorption spectroscopy technology, this paper summarizes the structure of the atomic absorption spectroscopy system used for in-situ real-time monitoring of the flux in molecular beam epitaxy,
Qing-ling-yun ZHANG, Yi-qiao CHEN
doaj   +1 more source

Ligand Assisted Epitaxial Growth of CsPbBr3 Microcrystal Resonators With Record ‐Low Lasing Thresholds

open access: yesAdvanced Functional Materials, EarlyView.
Solution‐based ligand‐assisted epitaxial growth (LAEG) yields high‐quality CsPbBr3 microcrystals on different substrates with superior morphology, passivated surfaces, and high photoluminescence quantum yield. These robust micro‐resonators achieve record‐low room‐temperature lasing thresholds of 7.2 kW·cm−2 and maintain operational stability up to 90 ...
Shuyu Zhou   +19 more
wiley   +1 more source

Unexpected Asymmetric Mn‐Sb Site Mixing and Reentrant Spin‐Glass State of MnSb2Te4

open access: yesAdvanced Functional Materials, EarlyView.
MnSb2Te4 is an intrinsic magnetic topological insulator. Its properties are extraordinarily sensitive to tiny defects, making structural studies essential for understanding how magnetism and topology work together. This work shows that Mn can be unevenly distributed within the crystal and how that disorder is linked to a newly reported spin‐glass state
Gustavo Chavez Ponce de Leon   +7 more
wiley   +1 more source

Molecular beam epitaxy of Nd2PdO4 thin films

open access: yesAIP Advances, 2017
We synthesized high quality, single crystalline thin films of a layered, complex 4d transition metal oxide (Nd2PdO4) by reactive molecular beam epitaxy, in order to determine the electronic structures associated with ...
Yoshiko Nanao   +5 more
doaj   +1 more source

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

open access: yesCrystals, 2016
Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect.
Chad A. Stephenson   +4 more
doaj   +1 more source

Emergence of a Hexagonal Fe2S2 Single Layer Without a Bulk Counterpart via Phase Transformation

open access: yesAdvanced Functional Materials, EarlyView.
Upon annealing, single‐layer Mackinawite iron sulfide transforms into a previously unknown hexagonal Fe2S2${\rm Fe}_2{\rm S}_2$ phase with β$\beta$‐CuI structure. STM, LEED, and first‐principles calculations identify the structure and show that electronic correlations and magnetic order are important for its stability.
Affan Safeer   +10 more
wiley   +1 more source

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

open access: yesAdvanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv   +15 more
wiley   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

open access: yesAdvanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng   +11 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

open access: yesAdvanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji   +15 more
wiley   +1 more source

Epitaxial Growth of BaBiO3 Thin Films on SrTiO3(001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations

open access: yesCrystals
BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed   +2 more
doaj   +1 more source

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