Results 51 to 60 of about 1,182 (109)
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
Nanoscale Research Letters, 2010 We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings.
Fedorov A +4 more
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Photoluminescence of ingaas/inp grown by molecular beam epitaxy
Semina: Ciências Exatas e Tecnológicas, 2004 Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate.
Harmand Jean Christophe +8 more
doaj
Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy
Nature CommunicationsMolecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains.
Yuki Sato +13 more
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Molecular beam epitaxy growth of IrO2 using plasma-only oxidation
APL MaterialsGrowth of IrO2 films via molecular beam epitaxy (MBE) using an oxygen plasma as the sole oxidant is demonstrated for the first time. We investigate the oxidizing conditions required for IrO2 by characterizing the species present in the plasma using ...
D. Sacksteder +4 more
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Molecular beam epitaxy with ionized dopant
Electrical Engineering in Japan, 1975 MATSUNAGA, Nobutoshi +2 more
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AT&T Technical Journal, 1980
Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Molecular beam epitaxy is an ultrahigh vacuum technique for growing very thin epitaxial layers of semiconductor crystals. Because it is inherently a slow growth process, extreme dimensional control over both major compositional variations and impurity incorporation can be achieved.
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Journal of the Society of Mechanical Engineers, 1989
A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
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A tutorial review of molecular beam epitaxial (MBE) growth of elemental, compound and alloy semiconductor films is presented. MBE is carried out on a heated substrate under ultra-high-vacuum (UHV) conditions (total pressure >
Hideaki KAMOHARA, Kazue TAKAHASHI
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1991
Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
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Molecular Beam Epitaxy (MBE) has become a well-established technique for the growth of ultra-thin films and devices with precise control of thickness, doping concentration and composition. The importance of MBE, basic growth processes, different forms of MBE and some of its recent applications are described in this review article.
P. R. Vaya, K. Ponnuraju
+4 more sources