Results 51 to 60 of about 29,757 (249)
Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated.
K. K. Wu
doaj +1 more source
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui +6 more
wiley +1 more source
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave +14 more
wiley +1 more source
Epitaxial integration and properties of SrRuO3 on silicon
We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer.
Zhe Wang +10 more
doaj +1 more source
Advances in ultrashallow doping of silicon
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing.
Chufan Zhang, Shannan Chang, Yaping Dan
doaj +1 more source
This study demonstrates a Bi2WO6/SrBi2Ta2O9 heterojunction where light‐driven ferroelectric polarization reversal couples with persistent photoconductivity, enabling exclusive NO2 selective room‐temperature sensing. The device achieves a two‐order‐of‐magnitude sensitivity enhancement over an unpolarized device, a sub‐ppb detection limit, and robust ...
Liping Tan +11 more
wiley +1 more source
Junction Physics and Architectural Paradigms in Optoelectronic Semiconductor Fibers
Optoelectronic fibers are emerging as a key platform for distributed sensing, energy harvesting, and optical communication in deformable systems. Their performance is fundamentally governed by junction formation under confined, dynamic processing conditions.
Hailiang Wang +4 more
wiley +1 more source
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D +8 more
doaj +1 more source

