Results 51 to 60 of about 82,642 (308)

Unstable Growth and Coarsening in Molecular-Beam Epitaxy

, 1998
The coarsening dynamics of three-dimensional islands on a growing film is discussed. It is assumed that the origin of the initial instability of a planar surface is the Ehrlich-Schwoebel step-edge barrier for adatom diffusion.
Amar, Bray, Ehrlich, Johnson, Kawakatsu, Lei-Han Tang, Schwoebel, Siegert, Siegert, Stroscio, Thürmer, Villain, Šmilauer   +12 more
core   +1 more source

Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy [PDF]

, 2010
GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 ...
Andreas Rudolph, Anna Fontcuberta i Morral, Benedikt Bauer, Bryllert T, Caroff P, Dieter Schuh, Elisabeth Reiger, Josef Zweck, Marcello Soda, Mårtensson T, Zhao Z   +10 more
core   +3 more sources

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Epitaxial Growth of BaBiO₃ Thin Films on SrTiO₃(001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations

Crystals
BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed, Stefan De Gendt, Clement Merckling   +2 more
doaj   +1 more source

Theoretical Investigation of Optical Intersubband Transitions and Infrared Photodetection in ${\beta}$-(AlxGa1-x)2O3/Ga2O3 Quantum Well Structures

, 2020
We provide theoretical consideration of intersubband transitions designed in the ultrawide bandgap Aluminum Gallium Oxide ((AlxGa1-x)2O3)/Gallium Oxide (Ga2O3)) quantum well system.
Krishnamoorthy, Sriram, Lyman, Joseph E.
core   +1 more source

Cathodoluminescence of oval defects in GaAs/AlxGa1–xAs epilayers using an optical fiber light collection system [PDF]

, 1988
A cathodoluminescence system using a novel optical fiber light collection system is employed to study oval defects in GaAs/Alx Ga1–x As epilayers grown by molecular beam epitaxy.
Hoenk, Michael E., Vahala, Kerry J.
core   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

Active and Passive Electronic Components, 1997
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated.
K. K. Wu
doaj   +1 more source

Reflection electron energy loss spectroscopy during initial stages of Ge growth on Si by molecular beam epitaxy [PDF]

, 1991
Using a conventional reflection high-energy electron diffraction gun together with an electron energy loss spectrometer, we have combined in situ measurements of inelastic scattering intensities from Si L2,3 and Ge L2,3 core losses with reflection ...
Ahn, Channing C., Atwater, Harry A.
core   +1 more source

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers

Advanced Materials Technologies, EarlyView.
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng, Cheng‐Feng Liu, Ruei‐Jhang Wang, Yu Cheng, Lung‐Yi Hsu, Yonder Berencén, Shengqiang Zhou, Hanh Thi‐Thu Tran, Guo‐En Chang   +8 more
wiley   +1 more source