Results 51 to 60 of about 3,923,319 (288)

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

APL Materials, 2017
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Patrick B. Marshall, Honggyu Kim, Kaveh Ahadi, Susanne Stemmer   +3 more
doaj   +1 more source

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

Nature Communications, 2021
The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature.
Xiaoqian Zhang, Qiangsheng Lu, Wenqing Liu, Wei Niu, Jiabao Sun, Jacob Cook, Mitchel Vaninger, Paul F. Miceli, David J. Singh, Shang-Wei Lian, Tay-Rong Chang, Xiaoqing He, Jun Du, Liang He, Rong Zhang, Guang Bian, Yongbing Xu   +16 more
doaj   +1 more source

Caracterização ótica e estrutural de nanofios de GaAs dopados com Mg [PDF]

, 2011
Mestrado em Engenharia FísicaNo presente trabalho realizámos um estudo para avaliar a influência da concentração de Mg nas propriedades óticas e estruturais de nanofios de GaAs crescidos em substratos de Si(111) por epitaxia de feixes moleculares ...
Falcão, Bruno Teixeira de Poças
core  

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

Alloying‐Controlled Tuning of Interfacial Spin‐Orbit Interaction and Magnetic Damping in Crystalline FeCo Thin Films Grown on GaAs(001)

Advanced Materials, EarlyView.
The interfacial spin‐orbit interaction in single‐crystalline Fe1−xCox thin films grown on GaAs(001) can be continuously tuned via alloying. Using spin‐orbit ferromagnetic resonance, the authors find that the interfacial spin‐orbit fields exhibit a nonmonotonic dependence on Co concentration, with a minimum at 20% Co. ABSTRACT The discovery of intrinsic
Hongrui Lao, Matthias Kronseder, Zhe Yuan, Thomas Narr, Thomas N. G. Meier, Nadine Mundigl, Xianlin Qu, Zhongchang Wang, Christian H. Back, Lin Chen   +9 more
wiley   +1 more source

Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy

Active and Passive Electronic Components, 1997
Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated.
K. K. Wu
doaj   +1 more source

Epitaxially Integrated Electro‐Optic KNbO3 Thin Films on Silicon

Advanced Materials, EarlyView.
We demonstrate the first epitaxial integration of electro‐optic KNbO3 thin films on silicon using suboxide molecular‐beam epitaxy. Combining adsorption‐controlled molecular‐beam epitaxy, advanced characterization, and phase‐field modeling, we demonstrate phase‐pure crystalline films mirroring bulk crystals with robust Pockels response, enabling future ...
Sankalpa Hazra, Tobias Schwaigert, Yingxin Zhu, Aiden Ross, Muhammad Aminul Haque Chowdhury, Shun‐Li Shang, Sameer Singh, Zhiyu Zhang, Zhe Wang, Brynn Brower, Saugata Sarker, Suchismita Sarker, Zi‐Kui Liu, Rama K. Vasudevan, Long‐Qing Chen, Yang Yang, Darrell G. Schlom, Venkatraman Gopalan   +17 more
wiley   +1 more source

Parity‐Dependent THz Harmonic Generation in Electrically Pumped Micro‐Lasers Exploiting Topological Insulator–Metamaterial Gratings

Advanced Materials, EarlyView.
Topological insulator–metamaterials integrated with electrically driven terahertz quantum cascade lasers enable parity‐dependent harmonic generation. Bulk‐dominated Bi2Se3 favors third‐harmonic emission at 9.96 THz, whereas topological‐surface‐state‐dominated Bi2Se3, Bi2Te3, and (Bi,Sb)2Te3 generate strong second harmonics near 6.5 THz.
Alessandra Di Gaspare, Craig S. Knox, Ahmet Yagmur, Sara Ghayeb Zamharir, Lianhe Li, Satoshi Sasaki, A. Giles Davies, Edmund H. Linfield, Joshua R. Freeman, Miriam S. Vitiello   +9 more
wiley   +1 more source

1T‐to‐2H Phase Evolution During Epitaxial Growth of Transition Metal Dichalcogenides

Advanced Materials, EarlyView.
During MOCVD growth of MoS2 and WSe2, a transient metallic 1T phase emerges in early, edge‐rich, chalcogen‐deficient domains and declines as the films ultimately coalesce as 2H material. Together, experiments and ReaxFF simulations link domain size, edge stoichiometry, and vacancies to this evolution.
Andrew R. Graves, Yiru Zhu, Matin Salimi Irdmusa, Nadire Nayir, Thomas V. Mc Knight, Chen Chen, Ke Wang, Adri C. T. van Duin, Joan M. Redwing   +8 more
wiley   +1 more source

Advances in ultrashallow doping of silicon

Advances in Physics: X, 2021
Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing.
Chufan Zhang, Shannan Chang, Yaping Dan
doaj   +1 more source