Atomic-Scale Characterization of Droplet Epitaxy Quantum Dots [PDF]
Nanomaterials, 2021 The fundamental understanding of quantum dot (QD) growth mechanism is essential to improve QD based optoelectronic devices. The size, shape, composition, and density of the QDs strongly influence the optoelectronic properties of the QDs. In this article,
Paul M Koenraad, Raja S R Gajjela
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Modeling of Al and Ga Droplet Nucleation during Droplet Epitaxy or Droplet Etching [PDF]
Nanomaterials, 2021 The temperature dependent density of Al and Ga droplets deposited on AlGaAs with molecular beam epitaxy is studied theoretically. Such droplets are important for applications in quantum information technology and can be functionalized e.g., by droplet ...
Christian Heyn
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Polarization Anisotropies in Strain-Free, Asymmetric, and Symmetric Quantum Dots Grown by Droplet Epitaxy [PDF]
Nanomaterials, 2021 We provide an extensive and systematic investigation of exciton dynamics in droplet epitaxial quantum dots comparing the cases of (311)A, (001), and (111)A surfaces.
Marco Abbarchi +4 more
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Comparative Chemico-Physical Analyses of Strain-Free GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy [PDF]
Nanomaterials, 2020 We investigate the quantum confinement effects on excitons in several types of strain-free GaAs/Al 0.3 Ga 0.7 As droplet epitaxy (DE) quantum dots (QDs).
Inah Yeo +6 more
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Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy [PDF]
Nanoscale Research Letters, 2010 We present of a detailed photoluminescence characterization of high efficiency GaAs/AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs/AlGaAs active layer was realized via droplet epitaxy and migration ...
Isella G +7 more
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Site-control of InAs quantum dots on InP by droplet epitaxy in MOVPE [PDF]
npj NanophotonicsWe demonstrate a novel approach for site-controlled growth of InAs quantum dots on InP substrates emitting at telecom wavelengths, including the C-band, for quantum photonics applications. Regular nanohole arrays were defined by electron-beam lithography
Guoliang Zhou +7 more
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Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy [PDF]
Nanoscale Research Letters, 2010 We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings.
Somaschini C +4 more
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Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy [PDF]
Nanoscale Research Letters, 2010 We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings.
Fedorov A +4 more
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Various Quantum- and Nano-Structures by III–V Droplet Epitaxy on GaAs Substrates [PDF]
Nanoscale Research Letters, 2009 We report on various self-assembled In(Ga)As nanostructures by droplet epitaxy on GaAs substrates using molecular beam epitaxy. Depending on the growth condition and index of surfaces, various nanostructures can be fabricated: quantum dots (QDs), ring ...
Wang Zh +5 more
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Self-organization of quantum-dot pairs by high-temperature droplet epitaxy [PDF]
Nanoscale Research Letters, 2006 The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet ...
Wang Zhiming +4 more
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