Results 1 to 10 of about 14,741 (168)

Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots

Crystals
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck, Hans Georg Babin, Andreas D. Wieck, Arne Ludwig   +3 more
doaj   +6 more sources

Local droplet etching on InAlAs/InP surfaces with InAl droplets

AIP Advances, 2022
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs.
Xin Cao, Yiteng Zhang, Chenxi Ma, Yinan Wang, Benedikt Brechtken, Rolf J. Haug, Eddy P. Rugeramigabo, Michael Zopf, Fei Ding   +8 more
doaj   +3 more sources

Dynamics of mass transport during nanohole drilling by local droplet etching [PDF]

Nanoscale Research Letters, 2015
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces.
Stefano Sanguinetti, Christian Heyn, David Jesson   +2 more
exaly   +5 more sources

Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Applied Surface Science
We demonstrated nanopit formation by Ga-assisted local droplet etching technique in InGaAs metamorphic layers grown on vicinal GaAs(111)A substrates. We studied nanopit formation depending on the substrate temperature, Ga flux and Ga amount. The etched pits show a highly symmetrical pyramidal shape with an equilateral triangular base and the edges of ...
Sérgio Bietti, Stefano Sanguinetti, Artur Tuktamyshev   +2 more
exaly   +4 more sources

Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In_0.52Al_0.48As Layers via Local Droplet Epitaxy

Crystals
Local droplet etching and subsequent refilling enables the fabrication of highly symmetric quantum dots with low fine structure splitting, suitable for generating polarization entangled photons.
Dennis Deutsch, Dirk Reuter
doaj   +3 more sources

Telecom O-Band Quantum Dots Fabricated by Droplet Etching

Crystals
We present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition.
Nikolai Spitzer, Elias Kersting, Meret Grell, Danial Kohminaei, Marcel Schmidt, Nikolai Bart, Andreas D. Wieck, Arne Ludwig   +7 more
doaj   +4 more sources

Local droplet etching of nanoholes and rings on GaAs and AlGaAs surfaces

Applied Physics Letters, 2008
We study the formation of nanoholes and rings on GaAs and AlGaAs surfaces by local droplet etching (LDE) with gallium and indium. The nanohole properties are tuned by variation in etching temperature and time as well as by the etchant. Nanoholes fabricated by In LDE are larger and have an about ten times lower density compared to Ga LDE, which allows ...
Christian Heyn, Hansen W, Stemmann A
exaly   +3 more sources

Local droplet etching with In, Al and InAl in In0.52Al0.48As layers for generation of quantum dots emitting in the optical C-band

Journal of Crystal Growth
Dirk Reuter, Dennis Deutsch, Viktoryia Zolatanosha   +2 more
exaly   +3 more sources

Local Droplet Etching with Indium Droplets on InP(100) by Metal–Organic Vapor Phase Epitaxy

Crystal Growth & Design
The local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal–organic vapor phase epitaxy (MOVPE) environment for the first time.
E. Sala, Young In Na, J. Heffernan
semanticscholar   +4 more sources

Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching [PDF]

Applied Physics Letters, 2015
The congruent evaporation temperature Tc of GaAs (001) is critical for many technological processes and is fundamental to the control and stability of Ga droplets for quantum structure fabrication. We apply the technique of local droplet etching (LDE) to
C. Heyn, D. Jesson
semanticscholar   +2 more sources