Results 1 to 10 of about 248 (168)

Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots

Crystals
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck, Hans Georg Babin, Andreas D. Wieck, Arne Ludwig   +3 more
doaj   +7 more sources

Local droplet etching on InAlAs/InP surfaces with InAl droplets

AIP Advances, 2022
GaAs quantum dots (QDs) grown by local droplet etching (LDE) have been studied extensively in recent years. The LDE method allows for high crystallinity, as well as precise control of the density, morphology, and size of QDs.
Xin Cao, Yiteng Zhang, Chenxi Ma, Yinan Wang, Benedikt Brechtken, Rolf J. Haug, Eddy P. Rugeramigabo, Michael Zopf, Fei Ding   +8 more
doaj   +4 more sources

Dynamics of mass transport during nanohole drilling by local droplet etching [PDF]

Nanoscale Research Letters, 2015
Local droplet etching (LDE) utilizes metal droplets during molecular beam epitaxy for the self-assembled drilling of nanoholes into III/V semiconductor surfaces. An essential process during LDE is the removal of the deposited droplet material from its initial position during post-growth annealing.
Ch Heyn, S Sanguinetti, D E Jesson
exaly   +7 more sources

Influence of the Etching Material Deposition Rate and Annealing Time on Nanohole Morphology Etched into InP/In_0.52Al_0.48As Layers via Local Droplet Epitaxy

Crystals
Local droplet etching and subsequent refilling enables the fabrication of highly symmetric quantum dots with low fine structure splitting, suitable for generating polarization entangled photons.
Dennis Deutsch, Dirk Reuter
doaj   +3 more sources

Faceting of local droplet-etched nanoholes in AlGaAs [PDF]

Physical Review Materials, 2018
Published by APS, College Park ...
Vonk, Vedran, Slobodskyy, Taras, Keller, Thomas F., Richard, Marie-Ingrid, Fernández, Sara, Schulli, Tobias, Heyn, Christian, Hansen, Wolfgang, Stierle, Andreas   +8 more
openaire   +3 more sources

Local droplet etching of a vicinal InGaAs(111)A metamorphic layer

Applied Surface Science
We demonstrated nanopit formation by Ga-assisted local droplet etching technique in InGaAs metamorphic layers grown on vicinal GaAs(111)A substrates. We studied nanopit formation depending on the substrate temperature, Ga flux and Ga amount. The etched pits show a highly symmetrical pyramidal shape with an equilateral triangular base and the edges of ...
Artur Tuktamyshev, Davide Lambardi, Stefano Vichi   +2 more
exaly   +3 more sources

Strong Electric Polarizability of Cone–Shell Quantum Structures for a Large Stark Shift, Tunable Long Exciton Lifetimes, and a Dot-to-Ring Transformation

Nanomaterials, 2023
Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE).
Christian Heyn, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, Carlos A. Duque, Wolfgang Hansen   +5 more
doaj   +1 more source

Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots

Nanomaterials, 2023
The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone–shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size.
Christian Heyn, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, Robert H. Blick   +4 more
doaj   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

Materials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +3 more
doaj   +1 more source

Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers

AIP Advances, 2023
We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band.
D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, D. Reuter   +4 more
doaj   +1 more source