Results 11 to 20 of about 14,741 (168)

Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters

ACS Applied Nano Materials, 2022
We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X-STM). Two different
Elisa Maddalena Sala, Paul Koenraad, Jon Heffernan   +2 more
exaly   +2 more sources

Excitonic lifetimes in single GaAs quantum dots fabricated by local droplet etching

New Journal of Physics, 2012
The time-dependent optical emission of GaAs quantum dots (QDs) is studied using single-dot photoluminescence (PL) spectroscopy with quasi-resonant excitation into the QD d-shell. The QDs are fabricated with a very recently developed method, i.e. by local
C. Heyn, C. Strelow, Wiebke Hansen
semanticscholar   +2 more sources

Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

Journal of Luminescence, 2018
Abstract We present an experimental and theoretical study of the optical properties of asymmetric strain-free GaAs quantum dots (QDs) fabricated by filling of self-organized nanoholes (NHs) created by local droplet etching. The energy levels are calculated within the effective mass approximation using as input a model anisotropic QD shape with C
Z. Trabelsi, M. Yahyaoui, S. B. Radhia, K. Boujdaria, E. Zallo, O. Schmidt, P. Atkinson, M. Chamarro, C. Testelin   +8 more
semanticscholar   +2 more sources

Role of Arsenic During Aluminum Droplet Etching of Nanoholes in AlGaAs

Nanoscale Research Letters, 2016
Self-assembled nanoholes are drilled into (001) AlGaAs surfaces during molecular beam epitaxy (MBE) using local droplet etching (LDE) with Al droplets.
Christian Heyn, Hansen Wolfgang, Heyn Christian   +2 more
exaly   +2 more sources

Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth

Nanomaterials
Quantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale
Elias Kersting, Hans-Georg Babin, Nikolai Spitzer, Jun-Yong Yan, Feng Liu, Andreas D. Wieck, Arne Ludwig   +6 more
doaj   +2 more sources

Faceting of local droplet-etched nanoholes in AlGaAs [PDF]

Physical Review Materials, 2018
Published by APS, College Park ...
Vonk, Vedran, Slobodskyy, Taras, Keller, Thomas F., Richard, Marie-Ingrid, Fernández, Sara, Schulli, Tobias, Heyn, Christian, Hansen, Wolfgang, Stierle, Andreas   +8 more
openaire   +2 more sources

Strong Electric Polarizability of Cone–Shell Quantum Structures for a Large Stark Shift, Tunable Long Exciton Lifetimes, and a Dot-to-Ring Transformation

Nanomaterials, 2023
Strain-free GaAs cone–shell quantum structures (CSQS) with widely tunable wave functions (WF) are fabricated using local droplet etching (LDE) during molecular beam epitaxy (MBE).
Christian Heyn, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, Carlos A. Duque, Wolfgang Hansen   +5 more
doaj   +1 more source

Temperature-Enhanced Exciton Emission from GaAs Cone–Shell Quantum Dots

Nanomaterials, 2023
The temperature-dependent intensities of the exciton (X) and biexciton (XX) peaks from single GaAs cone–shell quantum dots (QDs) are studied with micro photoluminescence (PL) at varied excitation power and QD size.
Christian Heyn, Leonardo Ranasinghe, Kristian Deneke, Ahmed Alshaikh, Robert H. Blick   +4 more
doaj   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

Materials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang, Xiang Guo, Zi-Jiang Luo, Zhao Ding   +3 more
doaj   +1 more source

Telecom C-band photon emission from (In,Ga)As quantum dots generated by filling nanoholes in In0.52Al0.48As layers

AIP Advances, 2023
We present the fabrication of strain-free quantum dots in the In0.53Ga0.47As/In0.52Al0.48As-system lattice matched to InP, as future sources for single and entangled photons for long-haul fiber-based quantum communication in the optical C-band.
D. Deutsch, C. Buchholz, V. Zolatanosha, K. D. Jöns, D. Reuter   +4 more
doaj   +1 more source