Results 11 to 20 of about 248 (168)

Congruent evaporation temperature of molecular beam epitaxy grown GaAs (001) determined by local droplet etching [PDF]

Applied Physics Letters, 2015
The congruent evaporation temperature Tc of GaAs (001) is critical for many technological processes and is fundamental to the control and stability of Ga droplets for quantum structure fabrication. We apply the technique of local droplet etching (LDE) to measure Tc for technologically important molecular beam epitaxy (MBE) grown GaAs (001).
Heyn, Ch., Jesson, D. E.
openaire   +3 more sources

Local Droplet Etching with Indium Droplets on InP(100) by Metal–Organic Vapor Phase Epitaxy [PDF]

Crystal Growth & Design
The local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala, E.M., In Na, Y., Heffernan, J.
openaire   +4 more sources

Telecom O-Band Quantum Dots Fabricated by Droplet Etching

Crystals
We present a novel growth technique for fabricating low-density InAs/GaAs quantum dots that emit in the telecom O-band. This method combines local droplet etching on GaAs surfaces using gallium with Stranski–Krastanov growth initiated by InAs deposition.
Nikolai Spitzer, Elias Kersting, Meret Grell, Danial Kohminaei, Marcel Schmidt, Nikolai Bart, Andreas D. Wieck, Arne Ludwig   +7 more
doaj   +2 more sources

Neutral, charged excitons and biexcitons in strain-free and asymmetric GaAs quantum dots fabricated by local droplet etching

Journal of Luminescence, 2018
Abstract We present an experimental and theoretical study of the optical properties of asymmetric strain-free GaAs quantum dots (QDs) fabricated by filling of self-organized nanoholes (NHs) created by local droplet etching. The energy levels are calculated within the effective mass approximation using as input a model anisotropic QD shape with C
Trabelsi, Z., Yahyaoui, M., Radhia, S. Ben, Boujdaria, K., Zallo, E., Schmidt, O.G., Atkinson, P., Chamarro, M., Testelin, C.   +8 more
openaire   +2 more sources

The Investigation of Intermediate Stage of Template Etching with Metal Droplets by Wetting Angle Analysis on (001) GaAs Surface

Nanoscale Research Letters, 2011
In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the ...
Lyamkina AA, Dmitriev DV, Galitsyn Yu, Kesler VG, Moshchenko SP, Toropov AI   +5 more
doaj   +1 more source

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes [PDF]

Nanoscale Research Letters, 2009
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch, Stemmann A, Köppen T, Strelow Ch, Kipp T, Grave M, Mendach S, Hansen W   +7 more
doaj   +2 more sources

Single-dot Spectroscopy of GaAs Quantum Dots Fabricated by Filling of Self-assembled Nanoholes [PDF]

Nanoscale Research Letters, 2010
We study the optical emission of single GaAs quantum dots (QDs). The QDs are fabricated by filling of nanoholes in AlGaAs and AlAs which are generated in a self-assembled fashion by local droplet etching with Al droplets.
Heyn Ch, Klingbeil M, Strelow Ch, Stemmann A, Mendach S, Hansen W   +5 more
doaj   +2 more sources

Excitonic lifetimes in single GaAs quantum dots fabricated by local droplet etching

New Journal of Physics, 2012
The time-dependent optical emission of GaAs quantum dots (QDs) is studied using single-dot photoluminescence (PL) spectroscopy with quasi-resonant excitation into the QD d-shell. The QDs are fabricated with a very recently developed method, i.e. by local droplet etching of self-assembled nanoholes in an epitaxial AlAs/AlGaAs heterostructure surface and
Ch Heyn, Ch Strelow, W Hansen
openaire   +2 more sources

Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth

Nanomaterials
Quantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale
Elias Kersting, Hans-Georg Babin, Nikolai Spitzer, Jun-Yong Yan, Feng Liu, Andreas D. Wieck, Arne Ludwig   +6 more
doaj   +2 more sources

Growth of GaInAs Quantum Dots via Local Droplet Etching on InP Substrates for the Standard Telecom Window

, 2020
Quantum computers will appear some time in the future and they will be that effective and powerful like no computer ever was before. As a result one has to find a way to secure information. Using methods which can withstand possible attacks relying on quantum computers.
Fuchs, Maximilian Michael
openaire   +2 more sources