Self-organization of quantum-dot pairs by high-temperature droplet epitaxy [PDF]
Nanoscale Research Letters, 2006 The spontaneously formation of epitaxial GaAs quantum-dot pairs was demonstrated on an AlGaAs surface using Ga droplets as a Ga nano-source. The dot pair formation was attributed to the anisotropy of surface diffusion during high-temperature droplet ...
Wang Zhiming +4 more
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Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters [PDF]
ACS Applied Nano Materials, 2022 [Image: see text] We present a detailed atomic-resolution study of morphology and substrate etching mechanism in InAs/InP droplet epitaxy quantum dots (QDs) grown by metal–organic vapor phase epitaxy via cross-sectional scanning tunneling microscopy (X ...
Raja S R Gajjela +2 more
exaly +7 more sources
Droplet epitaxy quantum dot based infrared photodetectors [PDF]
Nanotechnology, 2020 Abstract The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al 0.3 Ga 0.7 As barrier is reported.
Vichi S. +10 more
openaire +7 more sources
Quantum Nanostructures by Droplet Epitaxy [PDF]
Engineering Journal, 2009 Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350 'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created.
Panyakeow, Somsak
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GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements [PDF]
NanomaterialsA3B5 nanowires are usually grown via the vapor-liquid-solid mechanism. Species from the vapor are incorporated into the nanowires using a catalyst droplet. Typically, the droplet is a low-melting-point eutectic alloy of catalyst and group III metal. This
Nickolay V. Sibirev +5 more
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High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots. [PDF]
Sci Rep, 2020 We introduce a high–temperature droplet epitaxy procedure, based on the control of the arsenization dynamics of nanoscale droplets of liquid Ga on GaAs(111)A surfaces.
Bietti S +5 more
europepmc +3 more sources
Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]
Cryst Growth DesThe local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
europepmc +4 more sources
Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy [PDF]
NanomaterialsThis study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor–solid–liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst ...
Igor V. Shtrom +6 more
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Shutter-Synchronized Molecular Beam Epitaxy for Wafer-Scale Homogeneous GaAs and Telecom Wavelength Quantum Emitter Growth [PDF]
NanomaterialsQuantum dot (QD)-based single-photon emitter devices today are based on self-assembled random position nucleated QDs emitting at random wavelengths. Deterministic QD growth in position and emitter wavelength would be highly appreciated for industry-scale
Elias Kersting +6 more
doaj +2 more sources
Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry [PDF]
ACS Omega, 2018 Inah Yeo +5 more
doaj +2 more sources