Complex Nanostructures by Pulsed Droplet Epitaxy [PDF]
Nanomaterials and Nanotechnology, 2011 What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes,
Noboyuki Koguchi +3 more
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Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy [PDF]
Discover Nano, 2023 Nurzal Nurzal, Ing-Song Yu
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Control of Morphology and Substrate Etching in InAs/InP Droplet Epitaxy Quantum Dots for Single and Entangled Photon Emitters [PDF]
ACS Applied Nano Materials, 2022 Elisa M Sala +2 more
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GaAs Nanowire Growth by MBE with Catalyst Forming Eutectic Points with Both Elements [PDF]
NanomaterialsA3B5 nanowires are usually grown via the vapor-liquid-solid mechanism. Species from the vapor are incorporated into the nanowires using a catalyst droplet. Typically, the droplet is a low-melting-point eutectic alloy of catalyst and group III metal. This
Nickolay V. Sibirev +5 more
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Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy [PDF]
NanomaterialsThis study investigates the growth of gallium arsenide nanowires, using lead as a catalyst. Typically, nanowires are grown through the vapor–solid–liquid mechanism, where a key factor is the reduction in the nucleation barrier beneath the catalyst ...
Igor V. Shtrom +6 more
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Droplet Epitaxy Image Contrast in Mirror Electron Microscopy. [PDF]
Nanoscale Res Lett, 2017 Image simulation methods are applied to interpret mirror electron microscopy (MEM) images obtained from a movie of GaAs droplet epitaxy. Cylindrical symmetry of structures grown by droplet epitaxy is assumed in the simulations which reproduce the main features of the experimental MEM image contrast, demonstrating that droplet epitaxy can be studied in ...
Kennedy SM, Zheng CX, Jesson DE.
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Post-thermal-Induced Recrystallization in GaAs/Al0.3Ga0.7As Quantum Dots Grown by Droplet Epitaxy with Near-Unity Stoichiometry [PDF]
ACS Omega, 2018 Inah Yeo +5 more
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Nanomaterials, 2021 Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them.
Sergey V. Balakirev +4 more
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Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting
Nanoscale Research Letters, 2021 A MBE-prepared Gallium (Ga)-droplet surface on GaAs (001) substrate is in situ irradiated by a single shot of UV pulsed laser. It demonstrates that laser shooting can facilely re-adjust the size of Ga-droplet and a special Ga-droplet of extremely broad ...
Biao Geng +8 more
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Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets
Nanomaterials, 2023 Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step
Stefan Feddersen +4 more
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