Results 21 to 30 of about 1,511 (211)
Nanomaterials, 2021 Modern and future nanoelectronic and nanophotonic applications require precise control of the size, shape and density of III-V quantum dots in order to predefine the characteristics of devices based on them.
Sergey V. Balakirev +4 more
doaj +1 more source
Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy [PDF]
Nanoscale Research Letters, 2010 Fedorov A +4 more
doaj +2 more sources
Enable a Facile Size Re-distribution of MBE-Grown Ga-Droplets via In Situ Pulsed Laser Shooting
Nanoscale Research Letters, 2021 A MBE-prepared Gallium (Ga)-droplet surface on GaAs (001) substrate is in situ irradiated by a single shot of UV pulsed laser. It demonstrates that laser shooting can facilely re-adjust the size of Ga-droplet and a special Ga-droplet of extremely broad ...
Biao Geng +8 more
doaj +1 more source
Modeling of Masked Droplet Deposition for Site-Controlled Ga Droplets
Nanomaterials, 2023 Site-controlled Ga droplets on AlGaAs substrates are fabricated using area-selective deposition of Ga through apertures in a mask during molecular beam epitaxy (MBE). The Ga droplets can be crystallized into GaAs quantum dots using a crystallization step
Stefan Feddersen +4 more
doaj +1 more source
Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics
Nanophotonics, 2023 Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been demonstrated to be excellent sources of single photons and entangled photon pairs enabling applications within quantum photonics.
Wang Yun-Ran, Han Im Sik, Hopkinson Mark
doaj +1 more source
Scientific Reports, 2021 We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy.
Min Baik +6 more
doaj +1 more source
Droplet epitaxy of semiconductor nanostructures for quantum photonic devices [PDF]
Nature Materials, 2019 26 pages, 5 ...
Massimo Gurioli +4 more
openaire +4 more sources
Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates
Nanomaterials, 2022 We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented ...
Artur Tuktamyshev +10 more
doaj +1 more source
Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]
, 2014 We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A. +33 more
core +1 more source
Dataset for Droplet Epitaxy of InAs/InP Quantum Dots via MOVPE by using an InGaAs interlayer [PDF]
, 2021 Dataset for Droplet Epitaxy of InAs/InP Quantum Dots via MOVPE by using an InGaAs ...
Max Godsland (5781386) +3 more
core +1 more source