Results 21 to 30 of about 882 (192)

Fabrication of quantum dot and ring arrays by direct laser interference patterning for nanophotonics

Nanophotonics, 2023
Epitaxially grown semiconductor quantum dots (QDs) and quantum rings (QRs) have been demonstrated to be excellent sources of single photons and entangled photon pairs enabling applications within quantum photonics.
Wang Yun-Ran, Han Im Sik, Hopkinson Mark
doaj   +1 more source

Erratum to: Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy [PDF]

Nanoscale Research Letters, 2010
Fedorov A, Somaschini C, Bietti S, Koguchi N, Sanguinetti S   +4 more
doaj   +2 more sources

Optical characteristics of type-II hexagonal-shaped GaSb quantum dots on GaAs synthesized using nanowire self-growth mechanism from Ga metal droplet

Scientific Reports, 2021
We report the growth mechanism and optical characteristics of type-II band-aligned GaSb quantum dots (QDs) grown on GaAs using a droplet epitaxy-driven nanowire formation mechanism with molecular beam epitaxy.
Min Baik, Ji-hoon Kyhm, Hang-Kyu Kang, Kwang-Sik Jeong, Jong Su Kim, Mann-Ho Cho, Jin Dong Song   +6 more
doaj   +1 more source

Strain Relaxation of InAs Quantum Dots on Misoriented InAlAs(111) Metamorphic Substrates

Nanomaterials, 2022
We investigate in detail the role of strain relaxation and capping overgrowth in the self-assembly of InAs quantum dots by droplet epitaxy. InAs quantum dots were realized on an In0.6Al0.4As metamorphic buffer layer grown on a GaAs(111)A misoriented ...
Artur Tuktamyshev, Stefano Vichi, Federico Guido Cesura, Alexey Fedorov, Giuseppe Carminati, Davide Lambardi, Jacopo Pedrini, Elisa Vitiello, Fabio Pezzoli, Sergio Bietti, Stefano Sanguinetti   +10 more
doaj   +1 more source

Droplet epitaxy of semiconductor nanostructures for quantum photonic devices [PDF]

Nature Materials, 2019
26 pages, 5 ...
Massimo Gurioli, Zhiming Wang, Armando Rastelli, Takashi Kuroda, Stefano Sanguinetti   +4 more
openaire   +4 more sources

Can Nanowires Coalesce?

Nanomaterials, 2023
Coalescence of nanowires and other three-dimensional structures into continuous film is desirable for growing low-dislocation-density III-nitride and III-V materials on lattice-mismatched substrates; this is also interesting from a fundamental viewpoint.
Vladimir G. Dubrovskii
doaj   +1 more source

Droplet epitaxy quantum dot based infrared photodetectors

Nanotechnology, 2020
Abstract The fabrication and characterization of an infrared photodetector based on GaAs droplet epitaxy quantum dots embedded in Al 0.3 Ga 0.7 As barrier is reported.
Vichi S., Bietti S., Khalili A., Costanzo M., Cappelluti F., Esposito L., Somaschini C., Fedorov A., Tsukamoto S., Rauter P., Sanguinetti S.   +10 more
openaire   +5 more sources

Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires

Nanomaterials, 2020
III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
doaj   +1 more source

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

Nanoscale Research Letters, 2007
The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD ...
Strom NW, Wang Zh, Lee JH, AbuWaar ZY, Mazur Yu, Salamo GJ   +5 more
doaj   +1 more source

Control of complex quantum structures in droplet epitaxy [PDF]

Semiconductor Science and Technology, 2019
Abstract We report the controllable growth of GaAs quantum complexes in droplet molecular-beam epitaxy, and the optical properties of self-assembled Al x Ga
J M A Chawner, Y Chang, P D Hodgson, M Hayne, A J Robson, A M Sanchez, Q Zhuang   +6 more
openaire   +1 more source