Results 41 to 50 of about 1,511 (211)
Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates
Nanomaterials, 2020 Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting ...
Marco Abbarchi +3 more
doaj +1 more source
Droplet epitaxy of GaAs studied by in situ surface electron microscopy [PDF]
, 2017 Droplet epitaxy is a recently developed variant of molecular beam epitaxy (MBE) which is used to form compound semiconductor quantum structures. This usually involves the deposition of group III material liquid droplets on a substrate followed by ...
Zhou, Zhenyu (3718936)
core +1 more source
Effect of gallium termination on InGaAs wetting layer properties in droplet epitaxy InGaAs quantum dots [PDF]
, 2022 Self-assembled quantum dots based on III-V semiconductors have excellent properties for applications in quantum optics. However, the presence of a 2D wetting layer which forms during the Stranski-Krastanov growth of quantum dots can limit their ...
Atkinson, Paola +7 more
core +2 more sources
Control of complex quantum structures in droplet epitaxy [PDF]
Semiconductor Science and Technology, 2019 Abstract We report the controllable growth of GaAs quantum complexes in droplet molecular-beam epitaxy, and the optical properties of self-assembled Al x Ga
J M A Chawner +6 more
openaire +1 more source
Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots
AIP Advances, 2015 We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies ...
Y. C. Chang +4 more
doaj +1 more source
Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A
Nanomaterials, 2020 We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature.
Artur Tuktamyshev +6 more
doaj +1 more source
Advanced Functional Materials, EarlyView.A giant magnetic coercivity and a vertical shift of hysteresis loops are demonstrated in Sr3YCo4O10+δ epitaxial films. The hard magnetic behavior originates from ferromagnetic spin bags stabilized within a long‐range ordered oxygen‐vacancy structure.
Yanbin Chen +12 more
wiley +1 more source
Controlled Growth of InAs/GaAs Nanostructures by Droplet Epitaxy [PDF]
, 2018 In(Ga)As low-dimensional structures have wide applications from lasers to single photon emitters. Here, we demonstrate the controlled growth of InAs dots and rings on GaAs (100) by the droplet molecular beam epitaxy.
Zhao, Chao
core +1 more source
Advanced Functional Materials, EarlyView.Electrochemical etching provides an eco‐friendly alternative to hazardous HF methods for MXene production. This approach facilitates the selective isolation of the A‐layer from MAX phases with tunable surface terminations. Controlling voltage, electrolytes, temperature, and duration enables the optimal structural integrity. Nevertheless, existing scale
Jagdeep Singh +4 more
wiley +1 more source
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
Nanoscale Research Letters, 2010 In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D +8 more
doaj +1 more source