Results 41 to 50 of about 843 (177)
Quantum Nanostructures by Droplet Epitaxy
Engineering Journal, 2009 Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350 'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created.
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Operando Tracking of Oxygen‐Vacancy Dynamics and Negative Capacitance in Ca‐Doped BiFeO3
Advanced Functional Materials, EarlyView.Operando electrochemical impedance spectroscopy, combined with electrocoloration, enables a direct correlation between real‐space ionic redistribution and the corresponding frequency‐domain electrical response. In lateral Ca‐doped BiFeO3 devices, time‐resolved impedance snapshots capture the evolution from bulk‐dominated mixed conduction to an ...
Jeonghun Suh +3 more
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Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates
AIP Advances, 2022 N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native ...
Jashan Singhal +8 more
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Control of the lateral growth morphology in GaAs Droplet Epitaxy
Journal of Physics: Conference Series, 2010 We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics.
SOMASCHINI, CLAUDIO +4 more
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Advanced Functional Materials, EarlyView.Using nanobeam photoemission, we demonstrate imaging of the in‐plane and out‐of‐plane electric field landscape within a metal–semiconductor van der Waals heterostructure. We provide evidence for Schottky barrier formation that depends on the semiconductor thickness. ABSTRACT Achieving high‐performance optoelectronic devices based on two‐dimensional van
Dario Mastrippolito +17 more
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Boosting Conversion Efficiency in Zn3P2/InP Solar Cells Via Nanoscale Junction Engineering
Advanced Functional Materials, EarlyView.This study demonstrates the efficacy of selective area epitaxy (SAE) in enhancing the conversion efficiency of a Zn3P2${\rm Zn}_3{\rm P}_2$/InP heterojunction solar cell. The impact of the SAE pattern dimensions on the performance parameters is investigated. Small size opening limits Jsc because of current crowding whereas large size opening limits Voc
Raphael Lemerle +14 more
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Advanced Functional Materials, EarlyView.Combined UV–vis transmittance and wavelength‐dependent photo‐assisted DC I–V analyses reveal defect‐induced optical instability and a high density of deep donor‐like subgap traps in La‐doped SrSnO3. The resulting MOSFET achieves one of the highest on/off ratios reported for ABO3 perovskite devices, demonstrating the promise of stannate perovskites as ...
Sojin Jung +17 more
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Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots
CrystalsLocal droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck +3 more
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Nanomaterials, 2023 In this work, a novel hybrid SERS platform incorporating hybrid core-shell (HyCoS) AuPd nanoparticles (NPs) and MoS2 nanoplatelets has been successfully demonstrated for strong surface-enhanced Raman spectroscopy (SERS) enhancement of Rhodamine 6G (R6G).
Shusen Lin +8 more
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Advanced Materials, EarlyView.The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli +12 more
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