Results 41 to 50 of about 882 (192)

Ligand Assisted Epitaxial Growth of CsPbBr3 Microcrystal Resonators With Record ‐Low Lasing Thresholds

Advanced Functional Materials, EarlyView.
Solution‐based ligand‐assisted epitaxial growth (LAEG) yields high‐quality CsPbBr3 microcrystals on different substrates with superior morphology, passivated surfaces, and high photoluminescence quantum yield. These robust micro‐resonators achieve record‐low room‐temperature lasing thresholds of 7.2 kW·cm−2 and maintain operational stability up to 90 ...
Shuyu Zhou, Viktor Rehm, Zijian Peng, Tomáš Hrbek, Anastasia Barabash, Christoph J. Brabec, Berke Özyalin, Yufei Han, Johannes Böhmer, Johannes Will, Erdmann Spiecker, Klaus Götz, Tobias Unruh, Jędrzej Korczak, Tomasz Story, Felix Hilpert, Olaf Brummel, Jörg Libuda, Iva Matolínová, Wolfgang Heiss   +19 more
wiley   +1 more source

Control of the lateral growth morphology in GaAs Droplet Epitaxy

Journal of Physics: Conference Series, 2010
We present the detailed fabrication method of two different GaAs nanostructures with cylindrical symmetry by the Droplet Epitaxy technique. Concentric Multiple Rings or Coupled Rings/Disks are successfully obtained, exploiting the lateral growth around the Ga droplets, through a fine control of the crystallization dynamics.
SOMASCHINI, CLAUDIO, BIETTI, SERGIO, SANGUINETTI, STEFANO, Koguchi, N, Fedorov, A.   +4 more
openaire   +3 more sources

Molecular beam homoepitaxy of N-polar AlN on bulk AlN substrates

AIP Advances, 2022
N-polar AlN epilayers were grown on the N-face of single-crystal bulk AlN substrates by plasma-assisted molecular beam epitaxy. A combination of in situ thermal deoxidation and Al-assisted thermal desorption at high temperature aided in removing native ...
Jashan Singhal, Jimy Encomendero, Yongjin Cho, Len van Deurzen, Zexuan Zhang, Kazuki Nomoto, Masato Toita, Huili Grace Xing, Debdeep Jena   +8 more
doaj   +1 more source

Emergence of a Hexagonal Fe2S2 Single Layer Without a Bulk Counterpart via Phase Transformation

Advanced Functional Materials, EarlyView.
Upon annealing, single‐layer Mackinawite iron sulfide transforms into a previously unknown hexagonal Fe2S2${\rm Fe}_2{\rm S}_2$ phase with β$\beta$‐CuI structure. STM, LEED, and first‐principles calculations identify the structure and show that electronic correlations and magnetic order are important for its stability.
Affan Safeer, Wejdan Beida, Felix Oberbauer, Nicolae Atodiresei, Gustav Bihlmayer, Max Wolfertz, Chiara Schlichte, Wouter Jolie, Stefan Blügel, Jeison Fischer, Thomas Michely   +10 more
wiley   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots

Crystals
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck, Hans Georg Babin, Andreas D. Wieck, Arne Ludwig   +3 more
doaj   +1 more source

Topological Spin‐Texture Transitions in van der Waals Magnets Revealed by X‐Ray Fourier Transform Holography

Advanced Materials, EarlyView.
Applied here for the first time to a 2D material, high‐resolution synchrotron x‐ray Fourier transform holography directly images topological spin textures in Fe3GeTe2. Combined with atomistic tight‐binding simulations including itinerant electrons and Rashba spin‐orbit coupling, the approach reveals labyrinth, skyrmion, and mixed phases, and uncovers ...
Sourav Chowdhury, Soumyaranjan Dash, Michael Schneider, Christopher Klose, Chithra H. Sharma, Lisa‐Marie Kern, Tim A. Butcher, Josefin Fuchs, Santanu Pakhira, Samik DuttaGupta, Takashi Taniguchi, Kenji Watanabe, Sujit Das, Sanjeev Kumar, Bastian Pfau, Amir‐Abbas Haghighirad, Moritz Hoesch   +16 more
wiley   +1 more source

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

AIP Advances, 2012
We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth.
D. Broxtermann, M. Sivis, J. Malindretos, A. Rizzi   +3 more
doaj   +1 more source

MoS₂ Nanoplatelets on Hybrid Core-Shell (HyCoS) AuPd NPs for Hybrid SERS Platform for Detection of R6G

Nanomaterials, 2023
In this work, a novel hybrid SERS platform incorporating hybrid core-shell (HyCoS) AuPd nanoparticles (NPs) and MoS2 nanoplatelets has been successfully demonstrated for strong surface-enhanced Raman spectroscopy (SERS) enhancement of Rhodamine 6G (R6G).
Shusen Lin, Rutuja Mandavkar, Shalmali Burse, Md Ahasan Habib, Tasmia Khalid, Mehedi Hasan Joni, Young-Uk Chung, Sundar Kunwar, Jihoon Lee   +8 more
doaj   +1 more source

Spontaneous Nanopatterning and Strain Relaxation in SiGe Layers Grown by Oxidative Solid‐Phase Epitaxy

Advanced Materials Interfaces, EarlyView.
Thin SiGe buffer layers are grown by oxidative solid‐phase epitaxy, resulting in a nanopatterning of varying Ge concentration across the surface of the sample. The nanopatterning is caused by a hexagonal network of dislocations on the SiGe/Si(111) interface, and is visible by scanning electron microscopy, providing a non‐destructive method for ...
Sophie E. Bierer, Trevor R. Smith, Arezoo Mafi, Sunzhuoran Wang, Chengqian Liao, Vatsalkumar Patel, Andrew P. Knights, Ryan B. Lewis   +7 more
wiley   +1 more source