Results 51 to 60 of about 843 (177)
MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED
AIP Advances, 2012 We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth.
D. Broxtermann +3 more
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Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires
Scientific Reports, 2022 Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown
Janusz Sadowski +9 more
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Photonics, 2021 Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011].
Rajeev R. Kosireddy +3 more
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Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics
Advanced Materials, EarlyView.The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades +7 more
wiley +1 more source
Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators
Advanced Materials, EarlyView.Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng +11 more
wiley +1 more source
Ordered GaAs quantum dots by droplet epitaxy
, 2020 We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by droplet epitaxy using in-situ direct laser interference patterning (DLIP). Two-dimensional arrays of Ga droplets with a periodicity of ~ 300 nm are initially formed on nanoisland structured AlGaAs surfaces due to the localised surface diffusion under the influence ...
Wang, Yunran +2 more
openaire +2 more sources
Advanced Photonics Research, Volume 6, Issue 5, May 2025.Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
AIP Advances, 2016 We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy.
T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki
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Advanced Science, EarlyView.Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim +22 more
wiley +1 more source
Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review
Физико-химические аспекты изучения кластеров, наноструктур и наноматериаловThis review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
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