Results 51 to 60 of about 882 (192)

Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires

Scientific Reports, 2022
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown
Janusz Sadowski, Anna Kaleta, Serhii Kryvyi, Dorota Janaszko, Bogusława Kurowska, Marta Bilska, Tomasz Wojciechowski, Jarosław Z. Domagala, Ana M. Sanchez, Sławomir Kret   +9 more
doaj   +1 more source

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics, 2021
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011].
Rajeev R. Kosireddy, Stephen T. Schaefer, Marko S. Milosavljevic, Shane R. Johnson   +3 more
doaj   +1 more source

Harnessing Ultrafast Optical Pulses for 3D Microfabrication by Selective Tweezing and Immobilization of Colloidal Particles in an Integrated System

Advanced Photonics Research, Volume 6, Issue 5, May 2025.
Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna, Jieliyue Sun, Wenyu Liu, Robert H. Hurt, Kimani C. Toussaint Jr.   +4 more
wiley   +1 more source

Phase‐Dependent Oxygen Defect Energetics in Epitaxial NbN/AlN/NbN Films

Advanced Science, EarlyView.
Phase dependent oxygen defect energetics in epitaxial δ‐NbN/AlN/δ‐NbN and β‐Nb2N/AlN/β‐Nb2N trilayers. Atomic‐scale analysis and first‐principles calculations reveal distinct oxygen incorporation pathways across NbN polymorphs. Layer resolved defect formation energies show that O is energetically more favorable within δ‐NbN electrodes, whereas in β ...
Prachi Garg, Kedarsh Kaushik, Danqing Wang, Naomi Pieczulewski, Anand Ithepalli, John Wright, Debdeep Jena, David A. Muller, Hong X. Tang, Cyrus Dreyer, Baishakhi Mazumder   +10 more
wiley   +1 more source

Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
This review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
doaj   +1 more source

Local Droplet Etching‐Assisted Quantum Dot Epitaxy for Telecom C‐Band Quantum Light Emitters [PDF]

Nanophotonics
InGaAs quantum dots emitting in telecom wavelengths are fabricated using local droplet etching in a MOVPE growth process. The resulting low‐density emitters exhibit well‐defined optical properties, demonstrating the potential of this approach for developing quantum‐dot sources across the telecom wavelength range.
Połczyńska K, Wyborski P, Gawełczyk M, Kadkhodazadeh S, Munkhbat B, Sanguinetti S, Semenova E.   +6 more
europepmc   +2 more sources

Local Droplet Etching with Indium Droplets on InP(100) by Metal-Organic Vapor Phase Epitaxy. [PDF]

Cryst Growth Des
The local droplet etching (LDE) by using indium droplets on bare InP(100) surfaces is demonstrated in a metal-organic vapor phase epitaxy (MOVPE) environment for the first time. The role of an arsenic flow applied to self-assembled metallic indium droplets is systematically studied.
Sala EM, In Na Y, Heffernan J.
europepmc   +4 more sources

Nanoscale Confinement Enhances Ultrafast Demagnetization

Advanced Science, EarlyView.
Next generation spintronics may depend on successfully combining femtosecond spin dynamics with nanoscale device miniaturization. We address this by systematically studying the effect of nanoscale confinement on the femtosecond demagnetization of Iron. By combining ultrafast experiments sensitive to spins, charge carriers, and phonons, we uncover a nm ...
Yoav William Windsor, Tobias Lojewski, Moumita Kundu, Klaus Sokolowski‐Tinten, Nico Rothenbach, Andrea Eschenlohr, Markus Ernst Gruner, Katharina Ollefs, Carolin Schmitz‐Antoniak, Soma Salamon, Daniela Zahn, Laurenz Rettig, Christian Schüßler‐Langeheine, Niko Pontius, Renkai Li, Mianzhen Mo, Suji Park, Xiaoshe Shen, Stephen Weathersby, Xijie Wang, Rossitza Pentcheva, Heiko Wende, Ulrich Nowak, Uwe Bovensiepen   +23 more
wiley   +1 more source

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

AIP Advances, 2016
We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy.
T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki
doaj   +1 more source

Dipolar Coupling Errors in Nuclear Spin Qubits

Advanced Science, EarlyView.
Multi‐nuclear spin registers of phosphorus‐atom qubits in silicon have demonstrated 99.99% single and >$>$99.9% two qubit gate fidelities. Despite nanometer separation, read‐out fidelities between individual nuclear spins within the register are not identical.
I. D. Thorvaldson, P. Macha, J. Reiner, S. H. Misha, Y. Chung, L. Kranz, D. Keith, S. Monir, D. Poulos, S. Sutherland, Y.‐L. Hsueh, B. Thorgrimsson, R. Rahman, J. G. Keizer, S. K. Gorman, M. Y. Simmons   +15 more
wiley   +1 more source