Results 61 to 70 of about 843 (177)
Phase‐Dependent Oxygen Defect Energetics in Epitaxial NbN/AlN/NbN Films
Phase dependent oxygen defect energetics in epitaxial δ‐NbN/AlN/δ‐NbN and β‐Nb2N/AlN/β‐Nb2N trilayers. Atomic‐scale analysis and first‐principles calculations reveal distinct oxygen incorporation pathways across NbN polymorphs. Layer resolved defect formation energies show that O is energetically more favorable within δ‐NbN electrodes, whereas in β ...
Prachi Garg +10 more
wiley +1 more source
Nanoscale Confinement Enhances Ultrafast Demagnetization
Next generation spintronics may depend on successfully combining femtosecond spin dynamics with nanoscale device miniaturization. We address this by systematically studying the effect of nanoscale confinement on the femtosecond demagnetization of Iron. By combining ultrafast experiments sensitive to spins, charge carriers, and phonons, we uncover a nm ...
Yoav William Windsor +23 more
wiley +1 more source
Epitaxial integration of a C1N1 phase onto KPHI creates a dyadic charge‐transfer nanostructure with strong interfacial electronic coupling. This architecture drives directional electron transfer from KPHI to C1N1, enabling efficient cocatalyst‐free solar H2O2 production.
Haijian Tong +3 more
wiley +1 more source
In this work, the changes in the energy of electrons and holes, oscillator strength and interband transition time when external fields are applied to a GaAs/AlGaAs semiconductor double ring grown by the droplet epitaxy technique are theoretically ...
A Radu, C Stan, D Bejan
doaj +1 more source
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee +3 more
wiley +1 more source
In this work, we study metal droplets on a semiconductor surface that are the initial stage for both droplet epitaxy and local droplet etching. The distributions of droplet geometrical parameters such as height, radius and volume help to understand the ...
Lyamkina AA +5 more
doaj
Crystal Structures of GaN Nanodots by Nitrogen Plasma Treatment on Ga Metal Droplets
Gallium nitride (GaN) is one of important functional materials for optoelectronics and electronics. GaN exists both in equilibrium wurtzite and metastable zinc-blende structural phases.
Yang-Zhe Su, Ing-Song Yu
doaj +1 more source
A Reconfigurable Memristive Spiking Neuron Enabling Advanced Neuromorphic Computing
Pek Jun Tiw and co‐workers develop a reconfigurable memristive neuron that can exhibit four spiking behaviors with freely tunable spike train parameters. The neuron supports multiplexed spike encoding of multiple pieces of information. It also supports advanced neural network strategies, such as neural heterogeneity and dynamic mode switching ...
Pek Jun Tiw +6 more
wiley +1 more source
Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Thickness‐Tuned Berry Curvature in vdW Epitaxial Cr3Te4 Ultrathin Films
An investigation of thickness‐modulated Berry curvature in stoichiometric, high‐quality van der Waals epitaxial Cr3Te4 films. Surface and interface Te(CrTe2)‐termination enables Fermi level shifting via thickness variation, modulating Berry curvature near the band crossing point, thereby establishing termination engineering (may called Terminonics) as ...
Minghui Gu +6 more
wiley +1 more source

