Results 61 to 70 of about 1,511 (211)

Critical Aluminum Etch Material Amount for Local Droplet-Etched Nanohole-Based GaAs Quantum Dots

Crystals
Local droplet-etched-based GaAs quantum dots are promising candidates for high-quality single and entangled photon sources. They have excellent optical and spin properties thanks to their size, shape and nearly strain-free matrix integration.
Timo Kruck, Hans Georg Babin, Andreas D. Wieck, Arne Ludwig   +3 more
doaj   +1 more source

MoS₂ Nanoplatelets on Hybrid Core-Shell (HyCoS) AuPd NPs for Hybrid SERS Platform for Detection of R6G

Nanomaterials, 2023
In this work, a novel hybrid SERS platform incorporating hybrid core-shell (HyCoS) AuPd nanoparticles (NPs) and MoS2 nanoplatelets has been successfully demonstrated for strong surface-enhanced Raman spectroscopy (SERS) enhancement of Rhodamine 6G (R6G).
Shusen Lin, Rutuja Mandavkar, Shalmali Burse, Md Ahasan Habib, Tasmia Khalid, Mehedi Hasan Joni, Young-Uk Chung, Sundar Kunwar, Jihoon Lee   +8 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Fabrication of(Ga,Mn)As magnetic semiconductor quantum dots on Si substrates by droplet epitaxy [PDF]

, 2011
(Ga,Mn)As magnetic semiconductor quantum dots were fabricated on Si(001) substrates by droplet epitaxy using molecular-beam epitaxy. It is found that both the diameter and density of the(Ga,Mn)As quantum dots can be modulated by changing the amount of Ga
Wang, S.L., Zhao, J.H.(jhzhao@red.semi.ac.cn), Lu, J., Zhao, J.H., Chen, L., Xu, P.F., Meng, H.J., Meng, K.K.   +7 more
core  

MBE growth of high electron mobility 2DEGs in AlGaN/GaN heterostructures controlled by RHEED

AIP Advances, 2012
We have grown 2DEG AlGaN/GaN heterostructures by molecular beam epitaxy (MBE) with electron mobilities up to 21500 cm2V−1s−1 at 2 K. In-situ RHEED was applied to optimize different aspects of Ga-rich growth.
D. Broxtermann, M. Sivis, J. Malindretos, A. Rizzi   +3 more
doaj   +1 more source

Bi incorporation and segregation in the MBE-grown GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires

Scientific Reports, 2022
Incorporation of Bi into GaAs-(Ga,Al)As-Ga(As,Bi) core–shell nanowires grown by molecular beam epitaxy is studied with transmission electron microscopy. Nanowires are grown on GaAs(111)B substrates with Au-droplet assisted mode. Bi-doped shells are grown
Janusz Sadowski, Anna Kaleta, Serhii Kryvyi, Dorota Janaszko, Bogusława Kurowska, Marta Bilska, Tomasz Wojciechowski, Jarosław Z. Domagala, Ana M. Sanchez, Sławomir Kret   +9 more
doaj   +1 more source

Structural and Optical Properties of InAsSbBi Grown by Molecular Beam Epitaxy on Offcut GaSb Substrates

Photonics, 2021
Three InAsSbBi samples are grown by molecular beam epitaxy at 400 °C on GaSb substrates with three different offcuts: (100) on-axis, (100) offcut 1° toward [011], and (100) offcut 4° toward [011].
Rajeev R. Kosireddy, Stephen T. Schaefer, Marko S. Milosavljevic, Shane R. Johnson   +3 more
doaj   +1 more source

Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment

Advanced Materials Interfaces, EarlyView.
Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley   +1 more source

Substrate impact on the growth of InN nanostructures by droplet epitaxy [PDF]

, 2013
The substrate effect on InN nanostructures grown by droplet epitaxy has been studied. InN nanostructures were fabricated on Si(111), silicon nitride/Si(111), AlN/Si(111) and Ge(100) substrates by droplet epitaxy using an RF plasma nitrogen source.
Krupanidhi, SB, Rajpalke, Mohana K, Kumar, Mahesh, Bhat, Thirumaleshwara N, Roul, Basanta   +4 more
core   +1 more source

Coherence in single photon emission from droplet epitaxy and Stranski–Krastanov quantum dots in the telecom C-band [PDF]

, 2021
The ability of two photons to interfere lies at the heart of many photonic quantum networking concepts and requires that the photons are indistinguishable with sufficient coherence times to resolve the interference signals.
M. Anderson, Müller, T., Stevenson, R.M., Skiba-Szymanska, J., J. Huwer, D. A. Ritchie, A. J. Shields, Heffernan, J., J. Skiba-Szymanska, Krysa, A.B., T. Müller, Shields, A.J., Anderson, M., Huwer, J., A. B. Krysa, J. Heffernan, R. M. Stevenson, Ritchie, D.A.   +17 more
core   +1 more source