Results 71 to 80 of about 1,511 (211)

Self‐Powered Visible‐Blind Graphene/NiO/ZnO UV‐C Photodiodes

Advanced Optical Materials, EarlyView.
“A scalable architecture for self‐powered UV‐C photodiodes integrates defect‐engineered p‐NiO/n‐ZnO heterojunctions with highly UV‐C transparent graphene anodes. The type‐II band alignment combined with the built‐in electrical field enables robust zero‐bias charge separation.
Umut Kaya, Leon Lörcher, Yasaman Jarrahizadeh, Axel Lorke, Wolfgang Mertin, Gerd Bacher   +5 more
wiley   +1 more source

Elemental diffusion during the droplet epitaxy growth of In(Ga)As/GaAs(001) quantum dots by metal-organic chemical vapor deposition [PDF]

, 2014
Droplet epitaxy is an important method to produce epitaxial semiconductor quantum dots (QDs). Droplet epitaxy of III-V QDs comprises group III elemental droplet deposition and the droplet crystallization through the introduction of group V elements. Here,
Jagadish, C., Tan, Hark Hoe, Tan, H. H., W. Lei, X. Z. Liao, Y. B. Wang, Liao, X. Z., H. H. Tan, Ringer, S. P., Lei, W., Wang, Y. B., Z. B. Chen, C. Jagadish, Zou, J., J. Zou, Chen, B., S. P. Ringer, Chen, Z. B., B. Chen   +18 more
core   +1 more source

Ordered GaAs quantum dots by droplet epitaxy

, 2020
We report the fabrication of highly ordered arrays of GaAs/AlGaAs quantum dots (QDs) by droplet epitaxy using in-situ direct laser interference patterning (DLIP). Two-dimensional arrays of Ga droplets with a periodicity of ~ 300 nm are initially formed on nanoisland structured AlGaAs surfaces due to the localised surface diffusion under the influence ...
Wang, Yunran, Han, Im Sik, Hopkinson, Mark   +2 more
openaire   +2 more sources

Harnessing Ultrafast Optical Pulses for 3D Microfabrication by Selective Tweezing and Immobilization of Colloidal Particles in an Integrated System

Advanced Photonics Research, Volume 6, Issue 5, May 2025.
Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna, Jieliyue Sun, Wenyu Liu, Robert H. Hurt, Kimani C. Toussaint Jr.   +4 more
wiley   +1 more source

Low-temperature scanning tunneling microscopy of selfassembled inas quantum dots grown by droplet epitaxy [PDF]

, 2010
Using molecular beam epitaxy, we study self-assembled InAs quantum dots (QDs) grown on GaAs (001) substrates by lowtemperature scanning tunneling microscopy.
Durand, C., Durand, Corentin, Suzuki, K., Kanisawa, K., Grandidier, B., Peilloux, A., Muraki, K.   +6 more
core   +1 more source

Excitation power dependence of photoluminescence spectra of GaSb type-II quantum dots in GaAs grown by droplet epitaxy

AIP Advances, 2016
We investigated the excitation power P dependence of photoluminescence (PL) spectra of GaSb type-II quantum dots (QDs) in GaAs grown by droplet epitaxy.
T. Kawazu, T. Noda, Y. Sakuma, H. Sakaki
doaj   +1 more source

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Novel Morphologies of InAs Quantum Dot Growth on GaAs Surfaces Containing Nanostructures Formed by Droplet Epitaxy [PDF]

, 2006
Self-assembled InAs quantum dot clusters (QDCs) and InGaAs QD molecules (QDMs) have been demonstrated through a growth technique called “droplet epitaxy” by molecular beam epitaxy (MBE).
Jihoon Lee, N. W. Strom, G. J. Salamo, B.L. Liang, K. Sablon, Zh. M. Wang   +5 more
core   +1 more source

Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
This review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
doaj   +1 more source

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

Advanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee‐Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel   +8 more
wiley   +1 more source