Results 91 to 100 of about 843 (177)
Band Alignment and Composition of the Buried TiO2/GaInP Interface
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer +11 more
wiley +1 more source
High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots. [PDF]
Bietti S +5 more
europepmc +1 more source
ABSTRACT Micro‐/nanoscale single‐crystal materials have garnered significant attention due to their unique size‐dependent mechanical and functional properties, with applications spanning diverse cutting‐edge fields. This review provides a state‐of‐the‐art overview of these materials, encompassing their synthesis methods, advanced mechanical and ...
Yi Li +16 more
wiley +1 more source
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips +12 more
doaj +1 more source
By analyzing atomic force microscopy images, we studied the spatial distribution of nanoholes etched by InAl droplets in In0.52Al0.48As surfaces, employing molecular beam epitaxy.
Normen Auler +2 more
doaj +1 more source
Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch +7 more
doaj +1 more source
Homoepitaxial growth of GaN thin film using radical assist sputter epitaxy method at low temperature
We investigated unintentionally doped-gallium nitride (GaN) thin films grown on GaN template substrates at a substrate temperature of 600 °C using our developed radical assist sputter epitaxy (RaSE) method.
Masato Takeuchi +4 more
doaj +1 more source
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates. [PDF]
Tuktamyshev A +4 more
europepmc +1 more source
Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy. [PDF]
Linares-García G +8 more
europepmc +1 more source

