Results 91 to 100 of about 843 (177)

Band Alignment and Composition of the Buried TiO2/GaInP Interface

open access: yesAdvanced Materials Interfaces, Volume 13, Issue 16, 18 August 2026.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer   +11 more
wiley   +1 more source

High-temperature droplet epitaxy of symmetric GaAs/AlGaAs quantum dots. [PDF]

open access: yesSci Rep, 2020
Bietti S   +5 more
europepmc   +1 more source

Review of Micro‐/Nanoscale Single Crystals: Synthesis, Size‐Dependent Key Properties Versus Deformation Instabilities, and Mitigation Strategies

open access: yesRare Metals, Volume 45, Issue 8, August 2026.
ABSTRACT Micro‐/nanoscale single‐crystal materials have garnered significant attention due to their unique size‐dependent mechanical and functional properties, with applications spanning diverse cutting‐edge fields. This review provides a state‐of‐the‐art overview of these materials, encompassing their synthesis methods, advanced mechanical and ...
Yi Li   +16 more
wiley   +1 more source

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity

open access: yesScientific Reports
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips   +12 more
doaj   +1 more source

Statistical Analysis of the Spatial Distribution of InAl Droplet-Etched Nanoholes in In0.52Al0.48As Layers

open access: yesCrystals
By analyzing atomic force microscopy images, we studied the spatial distribution of nanoholes etched by InAl droplets in In0.52Al0.48As surfaces, employing molecular beam epitaxy.
Normen Auler   +2 more
doaj   +1 more source

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

open access: yesNanoscale Research Letters, 2009
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch   +7 more
doaj   +1 more source

Homoepitaxial growth of GaN thin film using radical assist sputter epitaxy method at low temperature

open access: yesResults in Surfaces and Interfaces
We investigated unintentionally doped-gallium nitride (GaN) thin films grown on GaN template substrates at a substrate temperature of 600 °C using our developed radical assist sputter epitaxy (RaSE) method.
Masato Takeuchi   +4 more
doaj   +1 more source

Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy. [PDF]

open access: yesNanoscale Res Lett, 2016
Linares-García G   +8 more
europepmc   +1 more source

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