Results 101 to 110 of about 1,511 (211)

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Self-Assembled Local Artificial Substrates of GaAs on Si Substrate

Nanoscale Research Letters, 2010
We propose a self-assembling procedure for the fabrication of GaAs islands by Droplet Epitaxy on silicon substrate. Controlling substrate temperature and amount of supplied gallium is possible to tune the base size of the islands from 70 up to 250 nm and
Frigeri C, Bietti S, Somaschini C, Koguchi N, Sanguinetti S   +4 more
doaj   +1 more source

Vibrational Exfoliation of 2D Materials

Small, EarlyView.
Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani, Faysal A. Khaleel, Fahad S. Al‐Gburi, Irwing Ramirez, Tomislav Friščić, Jason Stafford   +5 more
wiley   +1 more source

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source

High‐Resolution Laser‐Induced Forward Transfer of Graphene and Graphene/hBN Heterostructures Onto SiN Photodetector Patterns

physica status solidi (a), Volume 223, Issue 13, 8 July 2026.
Laser‐Induced Forward Transfer enables the maskless, high‐resolution integration of graphene and graphene/hBN pixels onto SiN photodetector architectures. Optimized laser processing preserves graphene quality while allowing transfer down to the 15 μm scale and across complex topographies, establishing a selective, mask‐free route toward straightforward
Katerina Magoula, Filimon Zacharatos, Amaia Zurutuza, Alba Centeno, Tarusisko Hirvenoja, Antti Brunström, Olli‐Pekka Kilpi, Ioanna Zergioti   +7 more
wiley   +1 more source

Fabrication and tuning of plasmonic optical nanoantennas around droplet epitaxy quantum dots by cathodoluminescence [PDF]

, 2013
International audienceWe use cathodoluminescence to locate droplet epitaxy quantum dots with a precision ≲50 nm before fabricating nanoantennas in their vicinity by electron-beam lithography.
Hye Lee, Eun, Gilles Nogues, Eun Hye Lee, Quentin Merotto, Dong Song, Jin, Nogues, Gilles, Guillaume Bachelier, Merotto, Quentin, Bachelier, Guillaume, Jin Dong Song   +9 more
core   +1 more source

Surface‐Plasmon‐Coupled Blue InGaN/GaN Micro‐LEDs with Oxide–Metal–Oxide Capping Layer Compatible to Chip Fabrication Process

Advanced Optical Materials, Volume 14, Issue 25, 3 July 2026.
A sidewall‐integrated oxide–metal–oxide architecture is demonstrated to overcome efficiency degradation in ultra‐small InGaN/GaN micro‐LEDs. Conformal Al2O3 passivation combined with plasmonic Ag nanoparticles enables localized surface plasmon–exciton coupling, converting surface‐related nonradiative losses into radiative emission.
Pil‐Kyu Jang, Lee‐Woon Jang, Ohbin Kwon, Yeong‐Hoon Cho, Sangbum Kim, Sang‐Ik Lee, Seungjae Baek, Jiwon Park, Myeongjun Choi, Jaeseung Kim, Taehwan Kim, Sung‐Un Kim, Min‐Seok Lee, Yong‐Ho Ra, Ki Hoon Nam, Seung Min Kwak, Alexander Y. Polyakov, In‐Hwan Lee   +17 more
wiley   +1 more source

Growth and characterisation of site-controlled InAs/InP quantum dots by droplet epitaxy in MOVPE [PDF]

, 2021
InAs/InP quantum dots were grown by droplet epitaxy via metal-organic vapor phase epitaxy (MOVPE). Their structural and optical properties on a planar substrate were extensively investigated.
Na, Young In
core  

Ultrafast atomic-scale visualization of acoustic phonons generated by optically excited quantum dots

Structural Dynamics, 2017
Understanding the dynamics of atomic vibrations confined in quasi-zero dimensional systems is crucial from both a fundamental point-of-view and a technological perspective.
Giovanni M. Vanacore, Jianbo Hu, Wenxi Liang, Sergio Bietti, Stefano Sanguinetti, Fabrizio Carbone, Ahmed H. Zewail   +6 more
doaj   +1 more source

Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties. [PDF]

Nanophotonics, 2022
Holewa P, Kadkhodazadeh S, Gawełczyk M, Baluta P, Musiał A, Dubrovskii VG, Syperek M, Semenova E.   +7 more
europepmc   +1 more source