Results 101 to 110 of about 882 (192)
Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes
Nanoscale Research Letters, 2009 Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch +7 more
doaj +1 more source
Disorder‐Broadened Topological Hall Phase and Anomalous Hall Scaling in FeGe
Advanced Functional Materials, Volume 36, Issue 79, 1 October 2026.By systematically introducing defects into FeGe via ion‐beam modification, we demonstrate that disorder broadens the temperature regime over which the topological Hall effect ‐ a signature of skyrmions or other chiral textures — appears, while also increasing its magnitude.
Chaman Gupta +11 more
wiley +1 more source
Comb‐Driven Coherent Optical Transmitter for Scalable DWDM Interconnects
Laser &Photonics Reviews, Volume 20, Issue 19, 7 October 2026.A comb‐driven coherent optical transmitter on a Si/SiN platform enables scalable DWDM interconnects by integrating ultra‐compact microring‐assisted modulators and interleavers. High‐baud coherent signaling achieves 400 Gb/s per wavelength and >$>$1 Tb/s multi‐channel transmission, with projected >$>$10 Tb/s per fiber, offering a path toward energy ...
Alireza Geravand +11 more
wiley +1 more source
Preparation and Characterization of Gradient‐Index Copper‐Oxide Films
physica status solidi (b), Volume 263, Issue 10, October 2026.Sequential deposition of 35 nm thick Cu layers on glass and oxidation at temperatures decreasing from 650 to 450 K enables the preparation of a gradient‐index oxide film, the stoichiometry of which monotonously changes from Cu2O to CuO with distance from the surface.
Roman Petrus, Tim Grieb, Niklas Nilius
wiley +1 more source
Homoepitaxial growth of GaN thin film using radical assist sputter epitaxy method at low temperature
Results in Surfaces and InterfacesWe investigated unintentionally doped-gallium nitride (GaN) thin films grown on GaN template substrates at a substrate temperature of 600 °C using our developed radical assist sputter epitaxy (RaSE) method.
Masato Takeuchi +4 more
doaj +1 more source
A Rack‐Integrated and Modular GaAs Quantum Dot Source of Highly Entangled Photon Pairs
Advanced Quantum Technologies, Volume 9, Issue 10, October 2026.A rack‐based, mobile quantum light source utilizing semiconductor quantum dots bridges the gap between laboratory research and industrial application. This automated system delivers near‐maximal entanglement and sustained brightness within a standardized footprint.
Yared G. Zena +11 more
wiley +1 more source
Small, Volume 22, Issue 57, 13 October 2026.Operando EC‐STM reveals that an NHC‐based SMOF on Au(111), initially frozen in interconnected 1D chains, dynamically reconfigures under cathodic bias into a fluxional structure bearing undercoordinated Au sites while abstracting Au atoms from the support.
Paulina Wira +12 more
wiley +1 more source
Core–Shell UHTCs as a Multiscale Design Paradigm for Extreme Environments
International Journal of Applied Ceramic Technology, Volume 23, Issue 5, October 2026.ABSTRACT An integrated perspective on the performance of multiscale core–shell ultra‐high temperature ceramics (UHTCs) developed through a multiphase design strategy is here presented. The manuscript merges insights gained from studies on ZrB2 formulated and processed in the presence of a second transition metal compound based on W, Mo, or Ta ...
Laura Silvestroni
wiley +1 more source
Temperature Activated Dimensionality Crossover in the Nucleation of Quantum Dots by Droplet Epitaxy on GaAs(111)A Vicinal Substrates. [PDF]
Sci Rep, 2019 Tuktamyshev A +4 more
europepmc +1 more source