Results 121 to 130 of about 1,511 (211)

Optical Properties of GaAs Quantum Dots Fabricated by Filling of Self-Assembled Nanoholes

open access: yesNanoscale Research Letters, 2009
Experimental results of the local droplet etching technique for the self-assembled formation of nanoholes and quantum rings on semiconductor surfaces are discussed. Dependent on the sample design and the process parameters, filling of nanoholes in AlGaAs
Heyn Ch   +7 more
doaj   +1 more source

Droplet epitaxy of 3D zinc-blende GaN islands on a 2D van der Waals SiN structure [PDF]

open access: yes
GaN quantum dots (QDs) have enormous potential for applications in science and technology, but their optimal use requires precise control of parameters such as density, size and monodispersity.
Pécz, Béla   +5 more
core   +1 more source

Homoepitaxial growth of GaN thin film using radical assist sputter epitaxy method at low temperature

open access: yesResults in Surfaces and Interfaces
We investigated unintentionally doped-gallium nitride (GaN) thin films grown on GaN template substrates at a substrate temperature of 600 °C using our developed radical assist sputter epitaxy (RaSE) method.
Masato Takeuchi   +4 more
doaj   +1 more source

Optical Properties of a Quantum Dot-Ring System Grown Using Droplet Epitaxy. [PDF]

open access: yesNanoscale Res Lett, 2016
Linares-García G   +8 more
europepmc   +1 more source

Morphological engineering of self-assembled nanostructures at nanoscale on faceted GaAs nanowires by droplet epitaxy. [PDF]

open access: yesNanoscale Res Lett, 2015
Zha GW   +7 more
europepmc   +1 more source

Droplet etching epitaxy for the nanostructuring of strain-free GaAs quantum dots [PDF]

open access: yes
Non-classical states of light in the form of single and entangled photons enable tests on fundamental physics and are the basis of many emerging quantum technologies.
Gossink, Declan Jotay
core  

Home - About - Disclaimer - Privacy