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Design of Nanostructure Complexes by Droplet Epitaxy
Crystal Growth & Design, 2009We demonstrate a number of unseen self-assembled nanostructure complexes fabricated on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions, the configuration of nanostructure complexes is distinctive on each surface.
Jihoon H. Lee +3 more
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Semiconductor quantum nanostructures by droplet epitaxy
SPIE Proceedings, 2012Droplet Epitaxy is a variant of molecular beam epitaxy for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Droplet Epitaxy it is possible to combine different quantum structures, namely quantum dots, quantum rings and quantum disks into a single unit, thus allowing an unprecedented control over ...
SANGUINETTI, STEFANO +2 more
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Growth of topological insulator nanoparticles by droplet epitaxy
Low-Dimensional Materials and Devices 2021, 2021Topological insulators (TIs) are a class of materials which exhibit unique electronic states delocalized on the outer surface of the material. Due to the strong spin-orbit coupling in TIs, these states are spin-polarized and robust against scattering. The robust nature of these states could present a potential solution to the problem of decoherence in ...
Sivakumar Vishnuvardhan Mambakkam +1 more
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Origin of Quantum Ring Formation During Droplet Epitaxy
Physical Review Letters, 2013Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resulting movies motivate a theoretical model for quantum ring formation which can explain the origin of nanoscale features such as double rings observed under a variety of experimental conditions. Inner rings correspond to GaAs deposition at the droplet edge,
Z. Y. Zhou +4 more
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Origin of nanohole formation by etching based on droplet epitaxy
Nanoscale, 2014Creating and manipulating materials at the nanoscale with controllable size, shape and nucleation site is an important task to meet the urgent demands for quantum structures with designed properties. In the last ten years, droplet epitaxy has been emerging as a versatile fabrication method for various complex nanostructures, such as quantum dots ...
Xinlei, Li +6 more
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On Droplet Epitaxy of InGaP Nanostructures
Materials Science ForumSemiconductor nanostructures are referred to semiconductor heterostructures confined in one, two, or all three dimensions, which are known as quantum wells, quantum wires, and quantum dots (QDs), respectively. QDs are semiconductor nanocrystals with significant potential for high-performance photonic and electronic devices based on III–V semiconductor ...
Tinatin Laperashvili, Orest Kvitsiani
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On the shape formation of the droplet epitaxial quantum dots
Microelectronics Reliability, 2016Abstract In this paper, the shape evolution kinetics of droplet epitaxially grown QDs is investigated. Here, the growth parameter dependent of two distinct QD shape regimes is discussed. We show that the QD shape is determined by the size and the contact angle of the initial droplet.
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Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy
Japanese Journal of Applied Physics, 2002Epitaxial Ge films were prepared by pulsed laser ablation (PLA) using molten Ge droplets on Si substrates [Yamada et al.: Jpn. J. Appl. Phys. 39 (2000) L278]. To confirm liquid-phase-epitaxy (LPE)-like growth with molten Ge droplets, the droplet temperatures during the flight and the cooling process on the Si substrate were simulated. It was found that
Shigeru Ohtsubo +4 more
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Fabrication of InAs nanoscale rings by droplet epitaxy
Journal of Crystal Growth, 2013Abstract We fabricated InAs nanoscale rings on InP substrates by droplet epitaxy. The rings were formed on an InGaAs layer with a thickness of d ( d =0, 3, 4, and 10 nm), below which a 10-nm-thick InAlAs layer was deposited. While the ring was closed when d =10 nm, it was of C-shape when d =3 and 4 nm.
T. Noda +4 more
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Evolution of InAs nanostructures grown by droplet epitaxy
Applied Physics Letters, 2007The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet.
C. Zhao +4 more
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