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Ordering of GaAs quantum dots by droplet epitaxy
physica status solidi (b), 2009AbstractStep‐edge‐induced ordering of GaAs QDs was achieved on GaAs(110) by droplet epitaxy in a lattice‐matched GaAs/AlGaAs system. After the growth of an AlGaAs barrier layer, step‐edges along the 〈113〉, 〈112〉, 〈111〉, and 〈221〉 directions were naturally formed.
Takaaki Mano +3 more
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Droplet epitaxy for advanced optoelectronic materials and devices
Journal of Physics D: Applied Physics, 2014Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though many research efforts have been devoted to droplet epitaxy since then, it is only until recently that droplet epitaxy has received worldwide attention. Compared with the well-known Stranski–Krastanow (S–K) growth mode, droplet epitaxy consists of the formation and ...
Jiang Wu, Zhiming M Wang
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Droplet epitaxy and its possibilities in nano-electronics
2018 7th International Symposium on Next Generation Electronics (ISNE), 2018In this work, we are dealing with a novel technology, called droplet epitaxy, which is useful technique when quantum dots are to be produced, of different shape and size in various densities. There are self-assembling methods to achieve quantum dot ensembles and their spatial ordering and positioning.
Nemcsics, Ákos +2 more
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Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces
Nanotechnology, 2020Abstract Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density.
Sergey V Balakirev +4 more
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Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs
Japanese Journal of Applied Physics, 2001The growth of InAs nanocrystals fabricated on GaAs by means of droplet epitaxy in a metal-organic chemical vapour-deposition chamber was investigated. To prevent deterioration of the droplet/substrate interface a nitride passivation layer was introduced.
Ines Pietzonka +4 more
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Coupled quantum nanostructures formed by droplet epitaxy
Thin Solid Films, 2006We demonstrate self-assembly of GaAs double quantum dots (DQDs) by droplet epitaxy in a lattice-matched system in addition to concentric quantum double rings (CQDRs). The growth mechanism of these complex nanostructures is understood by taking into account the two crystallization processes; the counter-migration (of Ga and As atoms)-induced ...
T. Mano +3 more
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Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy
Applied Physics Letters, 2011Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with ...
C. Li +9 more
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Atomic-scale mapping of quantum dots formed by droplet epitaxy
Nature Nanotechnology, 2009Quantum dots (QDs) have applications in optoelectronic devices, quantum information processing and energy harvesting. Although the droplet epitaxy fabrication method allows for a wide range of material combinations to be used, little is known about the growth mechanisms involved. Here we apply direct X-ray methods to derive sub-ångström resolution maps
Divine P, Kumah +4 more
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Droplet Epitaxy and applications
2014The semiconductor quantum dot (QD) intermediate band solar cells (IBSC) design introduce an extension of the absorption coefficient of the host semiconductor to lower energies without voltage loss [1]. The IBSC working mechanisms have been demonstrated via Stranski-Krastavov self-assembly of InAs QDs in GaAs, but many issues such as strain defect ...
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GaAs based nanostructures grown by droplet epitaxy
2011What makes three dimensional semiconductor quantum nanostructures (QN) so attractive is the possibility to tune their electronic properties by careful design of their size and composition. These parameters set the confinement potential of electrons and holes, thus determining the electronic and optical properties of the QN.
SANGUINETTI, STEFANO +3 more
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