Results 151 to 160 of about 882 (192)

Droplet Epitaxy of Nanostructures

2018
The droplet epitaxy is an innovative growth method, performed in the molecular beam epitaxy environment, for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. Droplet epitaxy is based on the split of the deposition of III and V column elements at controlled temperatures and fluxes.
Sanguinetti S., Bietti S., Koguchi N.
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Coupled quantum dot–ring structures by droplet epitaxy

Nanotechnology, 2011
The fabrication, by pure self-assembly, of GaAs/AlGaAs dot-ring quantum nanostructures is presented. The growth is performed via droplet epitaxy, which allows for the fine control, through As flux and substrate temperature, of the crystallization kinetics of nanometer scale metallic Ga reservoirs deposited on the surface.
SOMASCHINI, CLAUDIO, BIETTI, SERGIO, Koguchi, N, SANGUINETTI, STEFANO   +3 more
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Growth of topological insulator nanoparticles by droplet epitaxy

Low-Dimensional Materials and Devices 2021, 2021
Topological insulators (TIs) are a class of materials which exhibit unique electronic states delocalized on the outer surface of the material. Due to the strong spin-orbit coupling in TIs, these states are spin-polarized and robust against scattering. The robust nature of these states could present a potential solution to the problem of decoherence in ...
Sivakumar Vishnuvardhan Mambakkam, Stephanie Law   +1 more
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Design of Nanostructure Complexes by Droplet Epitaxy

Crystal Growth & Design, 2009
We demonstrate a number of unseen self-assembled nanostructure complexes fabricated on various GaAs surface indexes by droplet epitaxy. Even under identical growth conditions, the configuration of nanostructure complexes is distinctive on each surface.
Jihoon H. Lee, Zhiming M. Wang, Ziad Y. AbuWaar, Gregory J. Salamo   +3 more
openaire   +1 more source

Semiconductor quantum nanostructures by droplet epitaxy

SPIE Proceedings, 2012
Droplet Epitaxy is a variant of molecular beam epitaxy for the fabrication of quantum nanostructures with highly designable shapes and complex morphologies. With Droplet Epitaxy it is possible to combine different quantum structures, namely quantum dots, quantum rings and quantum disks into a single unit, thus allowing an unprecedented control over ...
SANGUINETTI, STEFANO, BIETTI, SERGIO, SOMASCHINI, CLAUDIO   +2 more
openaire   +1 more source

Origin of Quantum Ring Formation During Droplet Epitaxy

Physical Review Letters, 2013
Droplet epitaxy of GaAs is studied in real time using in situ surface electron microscopy. The resulting movies motivate a theoretical model for quantum ring formation which can explain the origin of nanoscale features such as double rings observed under a variety of experimental conditions. Inner rings correspond to GaAs deposition at the droplet edge,
Z. Y. Zhou, C. X. Zheng, W. X. Tang, J. Tersoff, D. E. Jesson   +4 more
openaire   +3 more sources

Origin of nanohole formation by etching based on droplet epitaxy

Nanoscale, 2014
Creating and manipulating materials at the nanoscale with controllable size, shape and nucleation site is an important task to meet the urgent demands for quantum structures with designed properties. In the last ten years, droplet epitaxy has been emerging as a versatile fabrication method for various complex nanostructures, such as quantum dots ...
Xinlei, Li, Jiang, Wu, Zhiming M, Wang, Baolai, Liang, Jihoon, Lee, Eun-Soo, Kim, Gregory J, Salamo   +6 more
openaire   +2 more sources

On Droplet Epitaxy of InGaP Nanostructures

Materials Science Forum
Semiconductor nanostructures are referred to semiconductor heterostructures confined in one, two, or all three dimensions, which are known as quantum wells, quantum wires, and quantum dots (QDs), respectively. QDs are semiconductor nanocrystals with significant potential for high-performance photonic and electronic devices based on III–V semiconductor ...
Tinatin Laperashvili, Orest Kvitsiani
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Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy

Japanese Journal of Applied Physics, 2002
Epitaxial Ge films were prepared by pulsed laser ablation (PLA) using molten Ge droplets on Si substrates [Yamada et al.: Jpn. J. Appl. Phys. 39 (2000) L278]. To confirm liquid-phase-epitaxy (LPE)-like growth with molten Ge droplets, the droplet temperatures during the flight and the cooling process on the Si substrate were simulated. It was found that
Shigeru Ohtsubo, Satoru Yamada, Yasuto Yonezawa, Akiharu Morimoto, Tatsuo Shimizu   +4 more
openaire   +1 more source

On the shape formation of the droplet epitaxial quantum dots

Microelectronics Reliability, 2016
Abstract In this paper, the shape evolution kinetics of droplet epitaxially grown QDs is investigated. Here, the growth parameter dependent of two distinct QD shape regimes is discussed. We show that the QD shape is determined by the size and the contact angle of the initial droplet.
openaire   +3 more sources