Results 161 to 170 of about 882 (192)

Fabrication of InAs nanoscale rings by droplet epitaxy

Journal of Crystal Growth, 2013
Abstract We fabricated InAs nanoscale rings on InP substrates by droplet epitaxy. The rings were formed on an InGaAs layer with a thickness of d ( d =0, 3, 4, and 10 nm), below which a 10-nm-thick InAlAs layer was deposited. While the ring was closed when d =10 nm, it was of C-shape when d =3 and 4 nm.
T. Noda, M. Jo, T. Mano, T. Kawazu, H. Sakaki   +4 more
openaire   +1 more source

Ordering of GaAs quantum dots by droplet epitaxy

physica status solidi (b), 2009
AbstractStep‐edge‐induced ordering of GaAs QDs was achieved on GaAs(110) by droplet epitaxy in a lattice‐matched GaAs/AlGaAs system. After the growth of an AlGaAs barrier layer, step‐edges along the 〈113〉, 〈112〉, 〈111〉, and 〈221〉 directions were naturally formed.
Takaaki Mano, Takashi Kuroda, Takeshi Noda, Kazuaki Sakoda   +3 more
openaire   +1 more source

Droplet epitaxy for advanced optoelectronic materials and devices

Journal of Physics D: Applied Physics, 2014
Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though many research efforts have been devoted to droplet epitaxy since then, it is only until recently that droplet epitaxy has received worldwide attention. Compared with the well-known Stranski–Krastanow (S–K) growth mode, droplet epitaxy consists of the formation and ...
Jiang Wu, Zhiming M Wang
openaire   +1 more source

Coupled quantum nanostructures formed by droplet epitaxy

Thin Solid Films, 2006
We demonstrate self-assembly of GaAs double quantum dots (DQDs) by droplet epitaxy in a lattice-matched system in addition to concentric quantum double rings (CQDRs). The growth mechanism of these complex nanostructures is understood by taking into account the two crystallization processes; the counter-migration (of Ga and As atoms)-induced ...
T. Mano, T. Noda, M. Yamagiwa, N. Koguchi   +3 more
openaire   +1 more source

Droplet epitaxy and its possibilities in nano-electronics

2018 7th International Symposium on Next Generation Electronics (ISNE), 2018
In this work, we are dealing with a novel technology, called droplet epitaxy, which is useful technique when quantum dots are to be produced, of different shape and size in various densities. There are self-assembling methods to achieve quantum dot ensembles and their spatial ordering and positioning.
Nemcsics, Ákos, Ürmös, Antal, Tóth, Lajos   +2 more
openaire   +2 more sources

Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces

Nanotechnology, 2020
Abstract Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density.
Sergey V Balakirev, Maxim S Solodovnik, Mikhail M Eremenko, Natalia E Chernenko, Oleg A Ageev   +4 more
openaire   +2 more sources

Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs

Japanese Journal of Applied Physics, 2001
The growth of InAs nanocrystals fabricated on GaAs by means of droplet epitaxy in a metal-organic chemical vapour-deposition chamber was investigated. To prevent deterioration of the droplet/substrate interface a nitride passivation layer was introduced.
Ines Pietzonka, Torsten Sass, Werner Seifert, Struan Gray, Charlotte Mogensen   +4 more
openaire   +1 more source

Evolution of InAs nanostructures grown by droplet epitaxy

Applied Physics Letters, 2007
The authors report the growth evolution of InAs dot and ring nanostructures with the indium deposition amount on GaAs (001) by droplet molecular beam epitaxy. There is a critical flux for the indium to form InAs dots even when there is no droplet.
C. Zhao, Y. H. Chen, B. Xu, P. Jin, Z. G. Wang   +4 more
openaire   +1 more source

Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy

Applied Physics Letters, 2011
Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with ...
C. Li, Z. Q. Zeng, D. S. Fan, Y. Hirono, J. Wu, T. A. Morgan, X. Hu, S. Q. Yu, Zh. M. Wang, G. J. Salamo   +9 more
openaire   +1 more source

Facetting of the self-assembled droplet epitaxial GaAs quantum dot

Microelectronics Reliability, 2011
Abstract In this work, droplet epitaxially grown GaAs quantum dots on AlGaAs surface are studied. The quantum dots are investigated in situ with RHEED and ex situ with TEM method. The TEM picture shows that the quantum dot is perfectly crystalline and fits very well to the crystal structure of the substrate.
Ákos Nemcsics, Lajos Tóth, Laszlo Dobos, Andrea Stemmann   +3 more
openaire   +2 more sources