Results 181 to 190 of about 1,511 (211)
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On the shape formation of the droplet epitaxial quantum dots
Microelectronics Reliability, 2016Abstract In this paper, the shape evolution kinetics of droplet epitaxially grown QDs is investigated. Here, the growth parameter dependent of two distinct QD shape regimes is discussed. We show that the QD shape is determined by the size and the contact angle of the initial droplet.
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Temperature Simulation of Cooling Process of Ge Droplets in Laser Droplet Epitaxy
Japanese Journal of Applied Physics, 2002Epitaxial Ge films were prepared by pulsed laser ablation (PLA) using molten Ge droplets on Si substrates [Yamada et al.: Jpn. J. Appl. Phys. 39 (2000) L278]. To confirm liquid-phase-epitaxy (LPE)-like growth with molten Ge droplets, the droplet temperatures during the flight and the cooling process on the Si substrate were simulated. It was found that
Shigeru Ohtsubo +4 more
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Fabrication of InAs nanoscale rings by droplet epitaxy
Journal of Crystal Growth, 2013Abstract We fabricated InAs nanoscale rings on InP substrates by droplet epitaxy. The rings were formed on an InGaAs layer with a thickness of d ( d =0, 3, 4, and 10 nm), below which a 10-nm-thick InAlAs layer was deposited. While the ring was closed when d =10 nm, it was of C-shape when d =3 and 4 nm.
T. Noda +4 more
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Ordering of GaAs quantum dots by droplet epitaxy
physica status solidi (b), 2009AbstractStep‐edge‐induced ordering of GaAs QDs was achieved on GaAs(110) by droplet epitaxy in a lattice‐matched GaAs/AlGaAs system. After the growth of an AlGaAs barrier layer, step‐edges along the 〈113〉, 〈112〉, 〈111〉, and 〈221〉 directions were naturally formed.
Takaaki Mano +3 more
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Droplet epitaxy for advanced optoelectronic materials and devices
Journal of Physics D: Applied Physics, 2014Droplet epitaxy was proposed to fabricate quantum dots in the early 1990s. Even though many research efforts have been devoted to droplet epitaxy since then, it is only until recently that droplet epitaxy has received worldwide attention. Compared with the well-known Stranski–Krastanow (S–K) growth mode, droplet epitaxy consists of the formation and ...
Jiang Wu, Zhiming M Wang
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Droplet epitaxy and its possibilities in nano-electronics
2018 7th International Symposium on Next Generation Electronics (ISNE), 2018In this work, we are dealing with a novel technology, called droplet epitaxy, which is useful technique when quantum dots are to be produced, of different shape and size in various densities. There are self-assembling methods to achieve quantum dot ensembles and their spatial ordering and positioning.
Nemcsics, Ákos +2 more
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Anomalous behavior of In adatoms during droplet epitaxy on the AlGaAs surfaces
Nanotechnology, 2020Abstract Semiconductor quantum dots (QDs) in the InAs/AlGaAs system are of great importance due to their promising optoelectronic and nanophotonic applications. However, control over emission wavelength governed by Al content in the matrix is still limited because of an influence of surface Al content on QD size and density.
Sergey V Balakirev +4 more
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Droplet Epitaxy of InAs Nanocrystals on GaN/GaAs
Japanese Journal of Applied Physics, 2001The growth of InAs nanocrystals fabricated on GaAs by means of droplet epitaxy in a metal-organic chemical vapour-deposition chamber was investigated. To prevent deterioration of the droplet/substrate interface a nitride passivation layer was introduced.
Ines Pietzonka +4 more
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Coupled quantum nanostructures formed by droplet epitaxy
Thin Solid Films, 2006We demonstrate self-assembly of GaAs double quantum dots (DQDs) by droplet epitaxy in a lattice-matched system in addition to concentric quantum double rings (CQDRs). The growth mechanism of these complex nanostructures is understood by taking into account the two crystallization processes; the counter-migration (of Ga and As atoms)-induced ...
T. Mano +3 more
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Bismuth nano-droplets for group-V based molecular-beam droplet epitaxy
Applied Physics Letters, 2011Self-assembly of bismuth droplets at nanoscale on GaAs(100) surface using molecular beam epitaxy was demonstrated. Fine control of density and size was achieved by varying growth temperature and total bismuth deposition. Droplet density was tuned by roughly 3 orders of magnitude, and the density-temperature dependence was found to be consistent with ...
C. Li +9 more
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