Characterization and Effect of Thermal Annealing on InAs Quantum Dots Grown by Droplet Epitaxy on GaAs(111)A Substrates. [PDF]
Bietti S +5 more
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Development of advanced GaAs nanostructures by droplet epitaxy
In the field of nanotechnology, a wide area of research is devoted to the studies about the self-assembly of semiconductor quantum nanostructures. Upon special conditions, semiconductor crystals spontaneously aggregate in nanometre sized clusters, which show unusual electronic and optical properties, thanks to their reduced dimension. Understanding the
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Characterization and density control of GaN nanodots on Si (111) by droplet epitaxy using plasma-assisted molecular beam epitaxy. [PDF]
Yu IS +5 more
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Growth and Characterisation of InAs Quantum Dots on GaP/Si Substrates using Droplet Epitaxy by MOVPE [PDF]
Heterogeneous integration of III-V semiconductor quantum dots with on-axis Si (001) substrates presents an avenue towards the development of quantum technologies on photonic integrated circuits.
Baldwin-McDonald, Paige Elizabeth
core
Single-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature. [PDF]
Benyoucef M +6 more
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Low-Density InGaAs/AlGaAs Quantum Dots in Droplet-Etched Nanoholes. [PDF]
Covre Da Silva SF +12 more
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Selective-Area Deposition of Indium and Its Plasmonic Properties. [PDF]
Dede D +10 more
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Droplet epitaxy of In/AlGaAs nanostructures on the As-stabilized surface
S V Balakirev +4 more
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Lithography-free, site-controlled germanium quantum dots in silicon nanowires for single-hole transistors operating up to 50 K. [PDF]
An J +7 more
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Advances in Strategies for Colloidal Self-Assembly. [PDF]
Li C +9 more
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