Results 31 to 40 of about 1,511 (211)
Nanomaterials, 2023 Coalescence of nanowires and other three-dimensional structures into continuous film is desirable for growing low-dislocation-density III-nitride and III-V materials on lattice-mismatched substrates; this is also interesting from a fundamental viewpoint.
Vladimir G. Dubrovskii
doaj +1 more source
Droplet-Confined Alternate Pulsed Epitaxy of GaAs Nanowires on Si Substrates down to CMOS-Compatible Temperatures [PDF]
, 2016 We introduce droplet-confined alternate pulsed epitaxy for the self-catalyzed growth of GaAs nanowires on Si(111) substrates in the temperature range from 550 °C down to 450 °C.
Leila Balaghi (2864546) +6 more
core +1 more source
Self-assembly of Semiconductor Quantum Dots by Droplet Epitaxy [PDF]
, 2006 We have proposed a novel self-assembling growth method, termed Droplet Epitaxy, for the direct formation of QDs without using any lithography in 1990. Compared with the island formation based on the Stranski-Krastanow growth mode, the Droplet Epitaxy is ...
Nobuyuki Koguchi
core +1 more source
InAs/InP Quantum Dots in etched pits by droplet epitaxy in MOVPE [PDF]
, 2020 Preprint of InAs/InP Quantum Dots in etched pits by droplet epitaxy in ...
Max Godsland (5781386) +4 more
core +1 more source
Oscillations of As Concentration and Electron-to-Hole Ratio in Si-Doped GaAs Nanowires
Nanomaterials, 2020 III–V nanowires grown by the vapor–liquid–solid method often show self-regulated oscillations of group V concentration in a catalyst droplet over the monolayer growth cycle.
Vladimir G. Dubrovskii, Hadi Hijazi
doaj +1 more source
Dataset and figures for Effect of cap thickness on InAs/InP quantum dots grown by droplet epitaxy in MOVPE [PDF]
, 2021 Dataset for Effect of cap thickness on InAs/InP quantum dots grown by droplet epitaxy in ...
Sala, E.M. +7 more
core +1 more source
Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates
Nanoscale Research Letters, 2007 The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD ...
Strom NW +5 more
doaj +1 more source
AIP Advances, 2021 We report on the development of deep-ultraviolet (DUV) wavelength-selective top-illuminated photodetectors based on AlGaN/AlN quantum-dots-in-wells. Structures consisting of 100 AlGaN wells and AlN barriers were grown by plasma-assisted molecular beam ...
Pallabi Pramanik +5 more
doaj +1 more source
Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring
Materials Research Express, 2021 GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang +3 more
doaj +1 more source
Droplet epitaxy of InAs/InP quantum dots via MOVPE by using an InGaAs interlayer [PDF]
, 2021 InAs quantum dots (QDs) are grown on an In0.53Ga0.47As interlayer and embedded in an InP(100) matrix. They are fabricated via droplet epitaxy (DE) in a metal organic vapor phase epitaxy (MOVPE) reactor.
Godsland, M. +4 more
core +1 more source