Results 31 to 40 of about 882 (192)

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

open access: yesNanomaterials, 2020
Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting ...
Marco Abbarchi   +3 more
doaj   +1 more source

Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures

open access: yesAIP Advances, 2021
We report on the development of deep-ultraviolet (DUV) wavelength-selective top-illuminated photodetectors based on AlGaN/AlN quantum-dots-in-wells. Structures consisting of 100 AlGaN wells and AlN barriers were grown by plasma-assisted molecular beam ...
Pallabi Pramanik   +5 more
doaj   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

open access: yesMaterials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang   +3 more
doaj   +1 more source

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

open access: yesNanomaterials, 2020
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature.
Artur Tuktamyshev   +6 more
doaj   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

open access: yesAdvanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto   +4 more
wiley   +1 more source

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

open access: yesAIP Advances, 2015
We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies ...
Y. C. Chang   +4 more
doaj   +1 more source

Sub‐1 ms Optoelectronic Synapse Based on {ZnCdO/ZnO} Multilayer Structure for High‐Speed Neuromorphic Vision Systems

open access: yesAdvanced Functional Materials, EarlyView.
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski   +3 more
wiley   +1 more source

Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

open access: yesNanoscale Research Letters, 2010
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D   +8 more
doaj   +1 more source

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

open access: yesAdvanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

Quantum Nanostructures by Droplet Epitaxy

open access: yesEngineering Journal, 2009
Droplet epitaxy is an alternative growth technique for several quantum nanostructures. Indium droplets are distributed randomly on GaAs substrates at low temperatures (120-350 'C). Under background pressure of group V elements, Arsenic and Phosphorous, InAs and InP nanostructures are created.
openaire   +2 more sources

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