Results 31 to 40 of about 843 (177)

Self-assembled InAs quantum dot formation on GaAs ring-like nanostructure templates

open access: yesNanoscale Research Letters, 2007
The evolution of InAs quantum dot (QD) formation is studied on GaAs ring-like nanostructures fabricated by droplet homo-epitaxy. This growth mode, exclusively performed by a hybrid approach of droplet homo-epitaxy and Stransky-Krastanor (S-K) based QD ...
Strom NW   +5 more
doaj   +1 more source

Deep-UV wavelength-selective photodetectors based on lateral transport in AlGaN/AlN quantum well and dot-in-well structures

open access: yesAIP Advances, 2021
We report on the development of deep-ultraviolet (DUV) wavelength-selective top-illuminated photodetectors based on AlGaN/AlN quantum-dots-in-wells. Structures consisting of 100 AlGaN wells and AlN barriers were grown by plasma-assisted molecular beam ...
Pallabi Pramanik   +5 more
doaj   +1 more source

Exciton Dynamics in Droplet Epitaxial Quantum Dots Grown on (311)A-Oriented Substrates

open access: yesNanomaterials, 2020
Droplet epitaxy allows the efficient fabrication of a plethora of 3D, III–V-based nanostructures on different crystalline orientations. Quantum dots grown on a (311)A-oriented surface are obtained with record surface density, with or without a wetting ...
Marco Abbarchi   +3 more
doaj   +1 more source

Kinetic calculation analysis of Ga deposition on the morphology evolution of GaAs quantum ring

open access: yesMaterials Research Express, 2021
GaAs Quantum Ring (QR) was gained on GaAs (001) by Droplet Epitaxy (DE), and the microscopic morphology of the GaAs samples was observed by Scanning Tunnel Microscope (STM).
Qi-Zhi Lang   +3 more
doaj   +1 more source

Reentrant Behavior of the Density vs. Temperature of Indium Islands on GaAs(111)A

open access: yesNanomaterials, 2020
We show that the density of indium islands on GaAs(111)A substrates have a non-monotonic, reentrant behavior as a function of the indium deposition temperature.
Artur Tuktamyshev   +6 more
doaj   +1 more source

Control of complex quantum structures in droplet epitaxy [PDF]

open access: yesSemiconductor Science and Technology, 2019
Abstract We report the controllable growth of GaAs quantum complexes in droplet molecular-beam epitaxy, and the optical properties of self-assembled Al x Ga
J M A Chawner   +6 more
openaire   +1 more source

Phonon bottleneck in GaAs/AlxGa1−xAs quantum dots

open access: yesAIP Advances, 2015
We report low-temperature photoluminescence measurements on highly-uniform GaAs/AlxGa1−xAs quantum dots grown by droplet epitaxy. Recombination between confined electrons and holes bound to carbon acceptors in the dots allow us to determine the energies ...
Y. C. Chang   +4 more
doaj   +1 more source

Giant Magnetic Coercivity Driven by Spin‐Bag Ferromagnetism in Epitaxial Sr3YCo4O10+δ Films with Engineered 2D Oxygen Vacancy Ordering

open access: yesAdvanced Functional Materials, EarlyView.
A giant magnetic coercivity and a vertical shift of hysteresis loops are demonstrated in Sr3YCo4O10+δ epitaxial films. The hard magnetic behavior originates from ferromagnetic spin bags stabilized within a long‐range ordered oxygen‐vacancy structure.
Yanbin Chen   +12 more
wiley   +1 more source

High‐Performance n‐Type Organic Thermoelectrics Enabled by Control Over Microstructure, Orientation and Contact Plane in Naphthalenediimide‐Bithiazole‐Copolymer Films

open access: yesAdvanced Functional Materials, EarlyView.
Effective control over the crystalline contact plane and microstructure of a naphthalenediimide‐bithiazole copolymer enables high‐performance n‐type thermoelectrics. While rubbing alignment induces a detrimental edge‐on orientation, subsequent solvent vapor‐induced re‐orientation facilitates a favorable mixed face‐on/edge‐on morphology.
Suhao Wang   +13 more
wiley   +1 more source

Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission

open access: yesNanoscale Research Letters, 2010
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D   +8 more
doaj   +1 more source

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