Results 31 to 40 of about 3,923,319 (288)

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
doaj   +1 more source

Perspective: Oxide molecular-beam epitaxy rocks!

APL Materials, 2015
Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level.
Darrell G. Schlom
doaj   +1 more source

Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

, 2018
Molecular beam epitaxy of dilute nitride materials has progressed a long way toward claiming its unique place as a technology that enables the development of new types of optoelectronics devices.
Shu M. Wang, Wang, Shumin,, Mircea Guina, Arto Aho, Guina, M.,, Aho, Arto,   +5 more
core   +1 more source

Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

AIP Advances, 2018
We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved.
Cheng-Da Tsai, Ikai Lo, Ying-Chieh Wang, Chen-Chi Yang, Shuo-Ting You, Hong-Yi Yang, Hui-Chun Huang, Mitch M. C. Chou   +7 more
doaj   +1 more source

Superconductivity in hyperdoped Ge by molecular beam epitaxy

AIP Advances, 2023
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation.
Patrick J. Strohbeen, Aurelia M. Brook, Wendy L. Sarney, Javad Shabani   +3 more
doaj   +1 more source

MBE of III-Nitride Semiconductors for Electronic Devices

, 2022
S.108-134In this chapter, the different growth techniques of plasma‐assisted molecular beam epitaxy (PAMBE) and ammonia‐based MBE (ammonia MBE) are presented. The emphasis is on the growth of binary GaN and AlN, ternary tensile‐strained
Lim, T., Ambacher, Oliver, Kirste, Lutz, Quay, Rüdiger, Aidam, Rolf, Godejohann, Birte-Julia, Waltereit, Patrick, Diwo, Elke   +7 more
core   +1 more source

Sub‐1 ms Optoelectronic Synapse Based on {ZnCdO/ZnO} Multilayer Structure for High‐Speed Neuromorphic Vision Systems

Advanced Functional Materials, EarlyView.
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski, Eunika Zielony, Adrian Kaim, Ewa Przeździecka   +3 more
wiley   +1 more source

MBE of dilute-nitride optoelectronic devices

, 2013
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its unique place as a key technology, which enables the development of new types of optoelectronics devices.
Guina, M., Wang, Shumin, Wang, Shu Min,, Mircea Guina, Wang, Shu Min, Guina, M.,, Shu Min Wang   +6 more
core   +1 more source

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

Advanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

Advanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma, Paolo De Vincenzi, Nadine Denis, Francesca Santangeli, Riccardo Pallucchi, Harikrishnan Gopalakrishnan, Elena Blundo, Antonio Polimeni, Marco Felici, Fumitaro Ishikawa, Marta De Luca   +10 more
wiley   +1 more source