Results 31 to 40 of about 1,182 (109)
Fabrication of AlGaInP/GaInP Laser Diodes by Molecular Beam Epitaxy
Active and Passive Electronic Components, 1997 Room temperature pulse operation for AlGaInP/GalnP visible laser diodes prepared by gas source molecular beam epitaxy (GSMBE) have been successfully fabricated and demonstrated.
K. K. Wu
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Epitaxial integration and properties of SrRuO3 on silicon
APL Materials, 2018 We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer.
Zhe Wang +10 more
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Advances in ultrashallow doping of silicon
Advances in Physics: X, 2021 Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing.
Chufan Zhang, Shannan Chang, Yaping Dan
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Semi-metallic SrIrO3 films using solid-source metal-organic molecular beam epitaxy
APL Materials, 2022 Perovskite SrIrO3 films and its heterostructures are very promising, yet less researched, avenues to explore interesting physics originating from the interplay between strong spin–orbit coupling and electron correlations.
Rashmi Choudhary +4 more
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Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
Nanoscale Research Letters, 2010 In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D +8 more
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Comparative analysis of the process of formation of fractal metal films: atomistic simulation
Физико-химические аспекты изучения кластеров, наноструктур и наноматериаловIn this paper, molecular dynamics method and the tight-binding potential were used to simulate a molecular beam epitaxy process for the formation of fractal metal films of copper subgroup elements (Ag, Au, Cu) on a solid surface of a more refractory ...
V.A. Anofriev +4 more
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Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Nature Communications, 2016 Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang +6 more
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Molecular beam epitaxy growth of superconducting Sr2RuO4 films
APL Materials, 2017 We report the growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate ...
M. Uchida +5 more
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Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016 Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
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High-mobility BaSnO3 grown by oxide molecular beam epitaxy
APL Materials, 2016 High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites.
Santosh Raghavan +5 more
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