Results 21 to 30 of about 3,923,319 (288)

Graphitic platform for self-catalysed InAs nanowires growth by molecular beam epitaxy [PDF]

, 2014
We report the self-catalysed growth of InAs nanowires (NWs) on graphite thin films using molecular beam epitaxy via a droplet-assisted technique. Through optimising metal droplets, we obtained vertically aligned InAs NWs with highly uniform diameter ...
Anyebe, Ezekiel A., Benjamin J Robinson, Fal'ko, Vladimir; id_orcid, Ana M Sanchez, Sánchez, Ana M., Ezekiel A Anyebe, Oleg Kolosov, Veal, T. D. (Tim D.), Zhukov, Alexander, Anyebe, Ezekiel, Zhuang, Qiandong, Veal, Tim D, Robinson, Benjamin, Zhuang, Qian D, Robinson, Benjamin J, Mohana K Rajpalke, Anyebe, Ezekiel A, Rajpalke, Mohana K, Veal, Tim D., Fal?ko, Vladimir, Zhuang, Qian D., Sanchez, A. M., Robinson, Benjamin J., Rajpalke, Mohana K., Anderson, Frazer, Falko, Vladimir, Frazer Anderson, Fal’ko, Vladimir, Vladimir Fal’ko, Tim D Veal, Alexander Zhukov, Qian D Zhuang, Kolosov, Oleg, Sanchez, Ana M   +33 more
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Hybrid molecular beam epitaxy of germanium-based oxides

Communications Materials, 2022
Germanium-based oxides are wide bandgap semiconductors with the prospects of ambipolar doping. Here, a hybrid molecular beam epitaxy is demonstrated for the growth of both rutile Sn1-x Ge x O2 and perovskite SrSn1-x Ge x O3 films.
Fengdeng Liu, Tristan K. Truttmann, Dooyong Lee, Bethany E. Matthews, Iflah Laraib, Anderson Janotti, Steven R. Spurgeon, Scott A. Chambers, Bharat Jalan   +8 more
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Characterisation of InAs/GaAs short period superlattices using column ratio mapping in aberration-corrected scanning transmission electron microscopy [PDF]

, 2012
The image processing technique of columnratiomapping was applied to aberration-corrected high angle annular dark field (HAADF) images of shortperiod MBE (molecular beam epitaxy) grown InAs/GaAssuperlattices. This method allowed the Indium distribution to
Finnie, M., Robb, P.D., Craven, A.J.
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Massive Dirac fermion observed in lanthanide-doped topological insulator thin films [PDF]

, 2015
This publication arises from research funded by the John Fell Oxford University Press (OUP) Research Fund, a DARPA MESO Project (No. N66001-11-1-4105), and funding from the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2
Srot, V, Van Aken, P. A., Collins-McIntyre, LJ, Chen, YL, Harrison, SE, Collins-McIntyre, Liam James, Kellock, A., Parkin, S.S.P., Chen, Schönherr, P, Vailionis, A., Chen, Y. L., Schönherr, Piet, Hesjedal, Thorsten, Pushp, A, Pushp, A., Harris, J.S., Srot, V., Hesjedal, T., Zhou, B, Collins-McIntyre, L., Parkin, S. S P, van Aken, P.A., Harris, J. S., Kellock, A.J., Harris, J., Kellock, AJ, van Aken, P., Hesjedal, T, Parkin, S., Parkin, SSP, Harrison, S., Collins-McIntyre, Liam J., Zhou, B., Harrison, S. E., Harris, JS, Kellock, A. J., Schönherr, P., van Aken, PA, Vailionis, A, Harrison, S.E.   +40 more
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Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

, 2022
S.1323-1327AlGaInAs/GaInAs multiple quantum well (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI).
Hofsass, V., Kunzel, H., Bottcher, J., Schweizer, H., Hase, A., Kaden, C.   +5 more
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Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport

Nanomaterials, 2022
A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires.
Vladimir G. Dubrovskii
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Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

APL Materials, 2016
The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex
A. T. Bollinger, J. Wu, I. Božović
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Wafer-scale epitaxial modulation of quantum dot density

Nature Communications, 2022
Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.
N. Bart, C. Dangel, P. Zajac, N. Spitzer, J. Ritzmann, M. Schmidt, H. G. Babin, R. Schott, S. R. Valentin, S. Scholz, Y. Wang, R. Uppu, D. Najer, M. C. Löbl, N. Tomm, A. Javadi, N. O. Antoniadis, L. Midolo, K. Müller, R. J. Warburton, P. Lodahl, A. D. Wieck, J. J. Finley, A. Ludwig   +23 more
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Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

, 2022
S.1241-1245In molecular beam epitaxy (MBE) grown AlInAs/GaInAs single quantum well high electron mobility transistor structures, the use of low growth temperature for layers below the channel to suppress Si movement is mandatory.
Kohn, E., Kunzel, H., Bottcher, J., Hase, A., Strahle, S.   +4 more
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Modeling and Control of Epitaxial Thin Film Growth [PDF]

, 2003
Thin film deposition is a manufacturing process in which tolerances may approach the size of individual atoms. The final film is highly sensitive to the processing conditions, which can be intentionally manipulated to control film properties. A lattice
Gallivan, Martha Anne
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