Results 21 to 30 of about 82,642 (308)
Control of InGaAs facets using metal modulation epitaxy (MME) [PDF]
, 2014 Control of faceting during epitaxy is critical for nanoscale devices. This work identifies the origins of gaps and different facets during regrowth of InGaAs adjacent to patterned features.
Baraskar, Ashish K. +8 more
core +3 more sources
Nanomaterials, 2022 A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires.
Vladimir G. Dubrovskii
doaj +1 more source
Molecular beam epitaxy of highly mismatched N-rich GaNSb and InNAs alloys [PDF]
, 2013 GaN materials alloyed with group V anions form the so-called highly mismatched alloys (HMAs). Recently, the authors succeeded in growing N-rich GaNAs and GaNBi alloys over a large composition range by plasma-assisted molecular beam epitaxy (PA-MBE). Here,
Detert, D. +10 more
core +1 more source
Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy
APL Materials, 2016 The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex
A. T. Bollinger, J. Wu, I. Božović
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Orientation-dependent pseudomorphic growth of InAs for use in lattice-mismatched mid-infrared photonic structures [PDF]
, 2014 In this study, InAs was deposited on GaAs (100) and GaAs (111)B 2 degrees towardssubstrates for the purpose of differentiating the InAs growth mode stemming from strain and then analyzed using in-situ reflection high energy electron diffraction, scanning
Cheng, Emily +2 more
core +2 more sources
Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate
NanomaterialsThe structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev +8 more
doaj +1 more source
Perspective: Oxide molecular-beam epitaxy rocks!
APL Materials, 2015 Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level.
Darrell G. Schlom
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Wafer-scale epitaxial modulation of quantum dot density
Nature Communications, 2022 Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.
N. Bart +23 more
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Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate
AIP Advances, 2018 We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved.
Cheng-Da Tsai +7 more
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Superconductivity in hyperdoped Ge by molecular beam epitaxy
AIP Advances, 2023 Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation.
Patrick J. Strohbeen +3 more
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