Results 21 to 30 of about 1,182 (109)
Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev +8 more
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Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate
We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved.
Cheng-Da Tsai +7 more
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Perspective: Oxide molecular-beam epitaxy rocks!
Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level.
Darrell G. Schlom
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Superconductivity in hyperdoped Ge by molecular beam epitaxy
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation.
Patrick J. Strohbeen +3 more
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Based on a brief review of the development history of atomic absorption spectroscopy technology, this paper summarizes the structure of the atomic absorption spectroscopy system used for in-situ real-time monitoring of the flux in molecular beam epitaxy,
Qing-ling-yun ZHANG, Yi-qiao CHEN
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Molecular beam epitaxy of Nd2PdO4 thin films
We synthesized high quality, single crystalline thin films of a layered, complex 4d transition metal oxide (Nd2PdO4) by reactive molecular beam epitaxy, in order to determine the electronic structures associated with ...
Yoshiko Nanao +5 more
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Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys
Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect.
Chad A. Stephenson +4 more
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Growth of strontium ruthenate films by hybrid molecular beam epitaxy
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Patrick B. Marshall +3 more
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Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films
The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature.
Xiaoqian Zhang +16 more
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BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed +2 more
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