Results 21 to 30 of about 1,182 (109)

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

open access: yesNanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev   +8 more
doaj   +1 more source

Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

open access: yesAIP Advances, 2018
We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved.
Cheng-Da Tsai   +7 more
doaj   +1 more source

Perspective: Oxide molecular-beam epitaxy rocks!

open access: yesAPL Materials, 2015
Molecular-beam epitaxy (MBE) is the “gold standard” synthesis technique for preparing semiconductor heterostructures with high purity, high mobility, and exquisite control of layer thickness at the atomic-layer level.
Darrell G. Schlom
doaj   +1 more source

Superconductivity in hyperdoped Ge by molecular beam epitaxy

open access: yesAIP Advances, 2023
Superconducting germanium films are an intriguing material for possible applications in fields such as cryogenic electronics and quantum bits. Recently, there has been a great deal of progress in hyperdoping of Ga doped Ge using ion implantation.
Patrick J. Strohbeen   +3 more
doaj   +1 more source

Application and research progress of flux monitoring technology by atomic absorption spectroscopy in molecular beam epitaxy

open access: yesGongneng cailiao yu qijian xuebao
Based on a brief review of the development history of atomic absorption spectroscopy technology, this paper summarizes the structure of the atomic absorption spectroscopy system used for in-situ real-time monitoring of the flux in molecular beam epitaxy,
Qing-ling-yun ZHANG, Yi-qiao CHEN
doaj   +1 more source

Molecular beam epitaxy of Nd2PdO4 thin films

open access: yesAIP Advances, 2017
We synthesized high quality, single crystalline thin films of a layered, complex 4d transition metal oxide (Nd2PdO4) by reactive molecular beam epitaxy, in order to determine the electronic structures associated with ...
Yoshiko Nanao   +5 more
doaj   +1 more source

Gas Source Techniques for Molecular Beam Epitaxy of Highly Mismatched Ge Alloys

open access: yesCrystals, 2016
Ge and its alloys are attractive candidates for a laser compatible with silicon integrated circuits. Dilute germanium carbide (Ge1−xCx) offers a particularly interesting prospect.
Chad A. Stephenson   +4 more
doaj   +1 more source

Growth of strontium ruthenate films by hybrid molecular beam epitaxy

open access: yesAPL Materials, 2017
We report on the growth of epitaxial Sr2RuO4 films using a hybrid molecular beam epitaxy approach in which a volatile precursor containing RuO4 is used to supply ruthenium and oxygen.
Patrick B. Marshall   +3 more
doaj   +1 more source

Room-temperature intrinsic ferromagnetism in epitaxial CrTe2 ultrathin films

open access: yesNature Communications, 2021
The emergence of two dimensional ferromagnetism suffers from an inherent fragility to thermal fluctuations, which typically restricts the Curie temperature to below room temperature.
Xiaoqian Zhang   +16 more
doaj   +1 more source

Epitaxial Growth of BaBiO3 Thin Films on SrTiO3(001) and MgO(001) Substrates Using Molecular Beam Epitaxy: Controlling the Competition Between Crystal Orientations

open access: yesCrystals
BaBiO3 has recently gained significant research attention as a parent material for an interesting family of alloyed compositions with multiple technological applications.
Islam Ahmed   +2 more
doaj   +1 more source

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