Results 21 to 30 of about 29,757 (249)

Molecular beam epitaxy growth of lattice-matched AlGaInAs/GaInAs multiple quantum well distributed feedback laser structures with gratings defined by implantation enhanced intermixing

, 2022
S.1323-1327AlGaInAs/GaInAs multiple quantum well (MQWs) are particularly suited for planar device integration using local refractive index modification by masked implantation enhanced intermixing (MIEI).
Hofsass, V., Kunzel, H., Bottcher, J., Schweizer, H., Hase, A., Kaden, C.   +5 more
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Theory of MBE Growth of Nanowires on Adsorbing Substrates: The Role of the Shadowing Effect on the Diffusion Transport

Nanomaterials, 2022
A new model for nanowire growth by molecular beam epitaxy is proposed which extends the earlier approaches treating an isolated nanowire to the case of ensembles of nanowires.
Vladimir G. Dubrovskii
doaj   +1 more source

Optimized molecular beam epitaxial growth temperature profile for high-performance AlInAs/GaInAs single quantum well high electron mobility transistor structures

, 2022
S.1241-1245In molecular beam epitaxy (MBE) grown AlInAs/GaInAs single quantum well high electron mobility transistor structures, the use of low growth temperature for layers below the channel to suppress Si movement is mandatory.
Kohn, E., Kunzel, H., Bottcher, J., Hase, A., Strahle, S.   +4 more
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Modeling and Control of Epitaxial Thin Film Growth [PDF]

, 2003
Thin film deposition is a manufacturing process in which tolerances may approach the size of individual atoms. The final film is highly sensitive to the processing conditions, which can be intentionally manipulated to control film properties. A lattice
Gallivan, Martha Anne
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Perspective: Rapid synthesis of complex oxides by combinatorial molecular beam epitaxy

APL Materials, 2016
The molecular beam epitaxy (MBE) technique is well known for producing atomically smooth thin films as well as impeccable interfaces in multilayers of many different materials. In particular, molecular beam epitaxy is well suited to the growth of complex
A. T. Bollinger, J. Wu, I. Božović
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MBE of III-Nitride Semiconductors for Electronic Devices

, 2022
S.108-134In this chapter, the different growth techniques of plasma‐assisted molecular beam epitaxy (PAMBE) and ammonia‐based MBE (ammonia MBE) are presented. The emphasis is on the growth of binary GaN and AlN, ternary tensile‐strained
Lim, T., Ambacher, Oliver, Kirste, Lutz, Quay, Rüdiger, Aidam, Rolf, Godejohann, Birte-Julia, Waltereit, Patrick, Diwo, Elke   +7 more
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Wafer-scale epitaxial modulation of quantum dot density

Nature Communications, 2022
Nucleation control of self-assembled quantum dots is challenging. Here, the authors employ conventional molecular beam epitaxy to achieve wafer-scale density modulation of high-quality quantum dots with tunable periodicity on unpatterned substrates.
N. Bart, C. Dangel, P. Zajac, N. Spitzer, J. Ritzmann, M. Schmidt, H. G. Babin, R. Schott, S. R. Valentin, S. Scholz, Y. Wang, R. Uppu, D. Najer, M. C. Löbl, N. Tomm, A. Javadi, N. O. Antoniadis, L. Midolo, K. Müller, R. J. Warburton, P. Lodahl, A. D. Wieck, J. J. Finley, A. Ludwig   +23 more
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Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
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Finite growth of InGaN/GaN triple-quantum-well microdisks on LiAlO2 substrate

AIP Advances, 2018
We have grown high-quality InxGa1-xN/GaN triple-quantum-well microdisks on LiAlO2 substrate by plasma-assisted molecular beam epitaxy. The InxGa1-xN/GaN microdisk with a hexagonal shape of oblique face 28o-angle off c-axis was achieved.
Cheng-Da Tsai, Ikai Lo, Ying-Chieh Wang, Chen-Chi Yang, Shuo-Ting You, Hong-Yi Yang, Hui-Chun Huang, Mitch M. C. Chou   +7 more
doaj   +1 more source

Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

, 2018
Molecular beam epitaxy of dilute nitride materials has progressed a long way toward claiming its unique place as a technology that enables the development of new types of optoelectronics devices.
Shu M. Wang, Wang, Shumin,, Mircea Guina, Arto Aho, Guina, M.,, Aho, Arto,   +5 more
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