Results 71 to 80 of about 3,923,319 (288)

Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy [PDF]

, 2011
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam ...
Liao, Chi-chih
core  

Phase‐Dependent Oxygen Defect Energetics in Epitaxial NbN/AlN/NbN Films

Advanced Science, EarlyView.
Phase dependent oxygen defect energetics in epitaxial δ‐NbN/AlN/δ‐NbN and β‐Nb2N/AlN/β‐Nb2N trilayers. Atomic‐scale analysis and first‐principles calculations reveal distinct oxygen incorporation pathways across NbN polymorphs. Layer resolved defect formation energies show that O is energetically more favorable within δ‐NbN electrodes, whereas in β ...
Prachi Garg, Kedarsh Kaushik, Danqing Wang, Naomi Pieczulewski, Anand Ithepalli, John Wright, Debdeep Jena, David A. Muller, Hong X. Tang, Cyrus Dreyer, Baishakhi Mazumder   +10 more
wiley   +1 more source

Atomic-layer-by-layer molecular beam epitaxy of Ruddlesden-Popper nickelates

npj Quantum Materials
The seminal discovery of high-temperature superconductivity in cuprates spurred extensive exploration of nickelates, given their structural and property similarities.
X. Shi, A. T. Bollinger, L. Aggarwal, X. He, X. Xu, A. Mitra, R. Caruso, T. Cvijetić, D. Subotić, I. Božović   +9 more
doaj   +1 more source

Molecular beam epitaxy growth of superconducting Sr2RuO4 films

APL Materials, 2017
We report the growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate ...
M. Uchida, M. Ide, H. Watanabe, K. S. Takahashi, Y. Tokura, M. Kawasaki   +5 more
doaj   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

Nanoscale Confinement Enhances Ultrafast Demagnetization

Advanced Science, EarlyView.
Next generation spintronics may depend on successfully combining femtosecond spin dynamics with nanoscale device miniaturization. We address this by systematically studying the effect of nanoscale confinement on the femtosecond demagnetization of Iron. By combining ultrafast experiments sensitive to spins, charge carriers, and phonons, we uncover a nm ...
Yoav William Windsor, Tobias Lojewski, Moumita Kundu, Klaus Sokolowski‐Tinten, Nico Rothenbach, Andrea Eschenlohr, Markus Ernst Gruner, Katharina Ollefs, Carolin Schmitz‐Antoniak, Soma Salamon, Daniela Zahn, Laurenz Rettig, Christian Schüßler‐Langeheine, Niko Pontius, Renkai Li, Mianzhen Mo, Suji Park, Xiaoshe Shen, Stephen Weathersby, Xijie Wang, Rossitza Pentcheva, Heiko Wende, Ulrich Nowak, Uwe Bovensiepen   +23 more
wiley   +1 more source

Probing Type‐II Multiferroicity in Monolayer NiBr2

Advanced Science, EarlyView.
Type‐II multiferroicity is demonstrated in monolayer NiBr2. Scanning tunneling microscopy resolves ferroelectric polarization arising from non‐collinear magnetic order, and reciprocal control with electric and magnetic fields confirms intrinsic magnetoelectric coupling.
Aleš Cahlík, Antti Karjasilta, Anshika Mishra, Robert Drost, Mohammad Amini, Javaria Arshad, Büşra Gamze Arslan, Peter Liljeroth   +7 more
wiley   +1 more source

High-mobility BaSnO3 grown by oxide molecular beam epitaxy

APL Materials, 2016
High-mobility perovskite BaSnO3 films are of significant interest as new wide bandgap semiconductors for power electronics, transparent conductors, and as high mobility channels for epitaxial integration with functional perovskites.
Santosh Raghavan, Timo Schumann, Honggyu Kim, Jack Y. Zhang, Tyler A. Cain, Susanne Stemmer   +5 more
doaj   +1 more source

Orientation‐Engineered Insulator‐Metal Transition in Vanadium Dioxide

Advanced Science, EarlyView.
Crystallographic orientation engineering in VO2/TiO2 heterostructures enables tunable insulator‐metal transitions. The high‐Miller‐index (102) orientation breaks in‐plane mirror symmetry, inducing anisotropic transport, while its inclined oxygen channels accelerate protonation kinetics.
Xuanchi Zhou, Xiaohui Yao, Wentian Lu, Chunwei Yao, Xiaomei Qiao   +4 more
wiley   +1 more source

Research on real-time optical flux monitoring technology in molecular beam epitaxy based on LED light source

Gongneng cailiao yu qijian xuebao
An LED with a spectral width between narrow and wide spectrum light sources was employed as the meso-spectral light source solution. Based on atomic absorption, non-invasive real-time multi-element flux intensity measurement and monitoring were achieved ...
Qinglingyun ZHANG, Xiaozhen WANG, Jianmei LI, Yiqiao CHEN   +3 more
doaj   +1 more source