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Growth of microstructures by molecular beam epitaxy

IEEE Journal of Quantum Electronics, 1986
Molecular beam epitaxy is the most widely currently used technique for the growth of semiconductor microstructures. Multilayers with thicknesses and smoothness controlled near the monolayer level are being produced, including, recently, quantum wells with special shapes, quantum wells to which electric fields may be applied, new structures with ...
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Molecular Beam Epitaxy

1996
Marian A. Herman, Helmut Sitter
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Molecular beam epitaxy

Progress in Solid State Chemistry, 1975
A.Y. Cho, J.R. Arthur
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Molecular Beam Epitaxy

2015
John Orton, Tom Foxon
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Molecular beam epitaxy

Microelectronics Reliability, 1974
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Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy

Advanced Materials, 2017
Zhongxin Chen, Xiaoxu Zhao, Yang Bao
exaly  

Molecular Beam Epitaxy

2004
Marian A. Herman   +2 more
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