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Growth of microstructures by molecular beam epitaxy
IEEE Journal of Quantum Electronics, 1986Molecular beam epitaxy is the most widely currently used technique for the growth of semiconductor microstructures. Multilayers with thicknesses and smoothness controlled near the monolayer level are being produced, including, recently, quantum wells with special shapes, quantum wells to which electric fields may be applied, new structures with ...
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Large Area Synthesis of 1D‐MoSe2 Using Molecular Beam Epitaxy
Advanced Materials, 2017Zhongxin Chen, Xiaoxu Zhao, Yang Bao
exaly
Epitaxial Graphene Growth by Carbon Molecular Beam Epitaxy (CMBE)
Advanced Materials, 2010Jeongho Park
exaly

