Results 91 to 100 of about 1,182 (109)

370 °C clean for Si molecular beam epitaxy using a HF dip

Applied Physics Letters, 1991
Higashi G S, Eaglesham D J, Cerullo M
exaly  

MOLECULAR BEAM EPITAXY

2020
openaire   +1 more source

Kinetic roughening in molecular-beam epitaxy

Physical Review Letters, 1991
, Tang, , Nattermann
openaire   +2 more sources

Molecular Beam Epitaxy of Highly Crystalline MoSe2 on Hexagonal Boron Nitride

ACS Nano, 2018
Xiaoxu Zhao, Kian Ping Loh, Stephen Pennycook   +2 more
exaly  

Arsenic precipitates and the semi‐insulating properties of GaAs buffer layers grown by low‐temperature molecular beam epitaxy

Applied Physics Letters, 1990
Grischkowsky D, Melloch M R, Ōtsuka N
exaly  

Heavily dopedp‐ZnSe:N grown by molecular beam epitaxy

Applied Physics Letters, 1991
Qiu J, Depuydt J M
exaly  

Semiconductor molecular‐beam epitaxy at low temperatures

Journal of Applied Physics, 1995
Eaglesham D J
exaly  

Molecular Beam Epitaxy of Nonstoichiometric Semiconductors and Multiphase Material Systems

Critical Reviews in Solid State and Materials Sciences, 1996
David D Nolte, D B Janes
exaly  

Gas source silicon molecular beam epitaxy using silane

Applied Physics Letters, 1987
Atsushi Ogura, Tatsumi Toru, Hirayama Hiroyuki   +2 more
exaly  

Molecular beam epitaxy

Microelectronics Reliability, 1979
openaire   +1 more source