Results 91 to 100 of about 82,642 (308)

Large‐Scale Growth of Self‐Poled Ferroelectric Rashba Semiconductor α‐GeTe(111) Thin Films: A Crucial Step Towards Future CMOS‐Compatible Ferroelectric Spintronic Devices

Advanced Science, EarlyView.
Ferroelectric Rashba semiconductors promise ultralow‐power devices but lack industry‐quality films. This work demonstrates CMOS‐compatible fabrication of high‐quality α‐GeTe(111) films via magnetron sputtering, enabled by a 5 nm Sb2Te3 seed layer. Structural and ferroelectric analyses show robust, switchable polarization comparable to MBE films, paving
Jules Lagrave, Nicolas Bernier, Thomas Jalabert, Yoann Brûlé, Damien Térébénec, Pierre Meilleur, Hervé Roussel, Jean‐Baptiste Dory, Oussama J. Mouawad, Thibault Chommaux, Cristian Mocuta, Dominique Thiaudière, Laurent Vila, Françoise Hippert, Pierre Noé   +14 more
wiley   +1 more source

Research on real-time optical flux monitoring technology in molecular beam epitaxy based on LED light source

Gongneng cailiao yu qijian xuebao
An LED with a spectral width between narrow and wide spectrum light sources was employed as the meso-spectral light source solution. Based on atomic absorption, non-invasive real-time multi-element flux intensity measurement and monitoring were achieved ...
Qinglingyun ZHANG, Xiaozhen WANG, Jianmei LI, Yiqiao CHEN   +3 more
doaj   +1 more source

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

npj Quantum Materials, 2017
Applied physics: New technique for oxide interfaces Recent advances in synthesizing and engineering oxide interfaces and heterostructures have provided a powerful strategy for creating new artificial structures exhibiting phenomena not possible in other ...
Qingyu Lei, Maryam Golalikhani, Bruce A. Davidson, Guozhen Liu, Darrell G. Schlom, Qiao Qiao, Yimei Zhu, Ravini U. Chandrasena, Weibing Yang, Alexander X. Gray, Elke Arenholz, Andrew K. Farrar, Dmitri A. Tenne, Minhui Hu, Jiandong Guo, Rakesh K. Singh, Xiaoxing Xi   +16 more
doaj   +1 more source

Infrared Rugates by Molecular Beam Epitaxy [PDF]

Rugates are optical structures that have a sinusoidal index of refraction (harmonic gradient-index field). As their discrete high/ low index filter counterparts, they can be used as narrow rejection band filters. However, since rugates do not have abrupt
Rona, M.
core   +1 more source

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials, EarlyView.
Uranium was controllably added to gallium nitride using molecular beam epitaxy. The uranium atoms segregated into vertically oriented regions with higher doping levels. Concentrations up to a few percent were achieved without showing significant degradation in the crystalline quality or optical characteristics. Low electrical resistivity was maintained
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
wiley   +1 more source

Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination

, 2015
Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ...
Atkinson, P., Borisov, A. G., Debiossac, M., Eddrief, M., Etgens, V. H., Finocchi, F., Khemliche, H., Momeni, A., Roncin, P., Zugarramurdi, A.   +9 more
core  

Strain distribution analysis of sputter-formed strained Si by tip-enhanced Raman spectroscopy

, 2011
Simultaneous nanometer-scale measurements of the strain and surface undulation distributions of strained Si (s-Si) layers on strain-relief quadruple-Si1-xGex-layer buffers, using a combined atomic force microscopy (AFM) and tip-enhanced Raman ...
Akifumi Kasamatsu, Alonso, Hanafusa, Harold M. H. Chong, Hirashita, Hiroaki Hanafusa, Hiroshi Mizuta, Kutsukake, Lee, Lutz, Maekawa, Maiti, Nobumitsu Hirose, Rosenbrad, Saito, Sawano, Sawano, Sawano, Takashi Mimura, Toshiaki Matsui, Tsang, Wong, Wu, Yoshiyuki Suda, Zhu   +24 more
core   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

Advanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee‐Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel   +8 more
wiley   +1 more source

Scale decomposition of molecular beam epitaxy [PDF]

Journal of Physics: Condensed Matter, 2008
5 figures, 1 ...
openaire   +3 more sources