Results 91 to 100 of about 3,923,319 (288)
Scale decomposition of molecular beam epitaxy [PDF]
5 figures, 1 ...
openaire +3 more sources
Enhancing Quasi‐Two‐Dimensional Electronic Structure in Bi2O2Se via Chlorine Substitution
We demonstrate chlorine substitution as an effective strategy to transform Bi2O2Se into an exfoliatable van der Waals superlattice. Key electronic band feature, including indirect bandgap, effective mass is well preserved, while the 2D character of the system is sufficiently enhanced.
Yong‐Zhen Jiang +19 more
wiley +1 more source
Trilayer oxide architecture introduces interfacial asymmetry and surface roughness in SRO/BTO/SRO heterostructures, creating a locally modulated polar and magnetic landscape. This design enhances the topological‐Hall‐like response, achieving a broad 5–90 K stability window and a maximum ρTHE of 0.8 µΩ cm, demonstrating an effective route to amplify ...
Sagar E. Shirsath +11 more
wiley +1 more source
Molecular Rectification: Mechanisms, Modulation Strategies, and Device Realization
This review focuses on molecular rectification, from its fundamental mechanisms and modulation strategies to device realization. It summarizes the theoretical framework, modulation strategies, fabrication techniques, characterization methods, and modeling and simulation of molecular rectifiers, while discussing challenges and future directions for ...
Junnan Guo +8 more
wiley +1 more source
Molecular beam epitaxy of Cd3As2 on a III-V substrate
Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac
Timo Schumann +3 more
doaj +1 more source
Optical Access to Dark Excitons Via Spin–Phonon Fano Interference
Dark excitons in quantum dots neither absorb nor emit light and stay hidden from optical spectroscopy. Quantum interference now reveals them: light scattered by acoustic phonons interferes with a phonon‐assisted spin flip between bright and dark exciton, carving a Fano dip into the spectrum whose position gives the bright–dark splitting. Magnetic field,
Janina J. Schindler +7 more
wiley +1 more source
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
Ordered indium arsenide (InAs) nanodots are formed by molecular beam epitaxy (MBE) on patterned gallium arsenide (GaAs) substrates, which are prepared by implanting manganese (Mn) ions through anodic aluminum oxide (AAO) membranes into the GaAs wafers ...
Wang, ZG +5 more
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Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak +8 more
wiley +1 more source
Growth of PdCoO2 by ozone-assisted molecular-beam epitaxy
We report the in situ, direct epitaxial synthesis of (0001)-oriented PdCoO2 thin films on c-plane sapphire using ozone-assisted molecular-beam epitaxy. The resulting films have smoothness, structural perfection, and electrical characteristics that rival ...
Jiaxin Sun +7 more
doaj +1 more source
IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES
GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2.
DONG AH +7 more
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