Results 91 to 100 of about 29,757 (249)

Antimonide-based field-effect transistors and heterojunction bipolar transistors grown by molecular beam epitaxy

, 2011
For the development of novel high-speed devices, the epitaxial growth of antimonide-based compounds and devices, including field effect transistors (FETs) and hetero-junction bipolar transistors (HBTs), was explored using gas-source molecular beam ...
Liao, Chi-chih
core  

Molecular beam epitaxy of Cd3As2 on a III-V substrate

APL Materials, 2016
Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac
Timo Schumann, Manik Goyal, Honggyu Kim, Susanne Stemmer   +3 more
doaj   +1 more source

Advances in Gate Dielectrics for 2D Electronics

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung, Jiwoo Kim, Gwan‐Hyoung Lee   +2 more
wiley   +1 more source

Te(100) by molecular beam epitaxy

, 1987
p-type doping of HgCdTe(100) layers with lithium during growth by molecular beam epitaxy is reported. Hall measurements have been performed on these layers between 300 and 30 K. The Li concentration is found to increase with the Li cell temperature.
M. Boukerche, I. K. Sou, Sivananthan, S., Mahavadi, K. K., Faurie, J. P., K. K. Mahavadi, Wijewarnasuriya, P. S., Kim, Y. J., P. S. Wijewarnasuriya, S. Sivananthan, Boukerche, M., Y. J. Kim, J. P. Faurie, Sou, I. K.   +13 more
core   +1 more source

Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications

physica status solidi (RRL) – Rapid Research Letters, EarlyView.
2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia, Saeed Rasouli, Walter M. Weber, Daniele Nazzari   +3 more
wiley   +1 more source

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

, 1997
Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C.
Liu JP, Liu JP CHINESE ACAD SCIINST SEMICONDCTR MAT SCIPOB 912BEIJING 100083PEOPLES R CHINA., Kong MY, Li JP, Liu XF, Sun DZ   +5 more
core  

Growth of PdCoO2 by ozone-assisted molecular-beam epitaxy

APL Materials, 2019
We report the in situ, direct epitaxial synthesis of (0001)-oriented PdCoO2 thin films on c-plane sapphire using ozone-assisted molecular-beam epitaxy. The resulting films have smoothness, structural perfection, and electrical characteristics that rival ...
Jiaxin Sun, Matthew R. Barone, Celesta S. Chang, Megan E. Holtz, Hanjong Paik, Jürgen Schubert, David A. Muller, Darrell G. Schlom   +7 more
doaj   +1 more source

Two‐step annealing process drives high thermoelectric performance of n‐type Bi2Te3 flexible films

Responsive Materials, EarlyView.
To address the relatively low carrier mobility in n‐type Bi2Te3 films prepared by magnetron sputtering, we developed a two‐step annealing process, including in situ and post‐annealing heat treatment. This method yields a high mobility (132.54 cm2 V−1 s−1) and S2σ (14.5 μW cm−1 K−2) by promoting pronounced grain growth and strengthening the preferred ...
Liang‐Cao Yin, Xinhua Lu, Wei‐Di Liu, Ji‐Wei Hou, De‐Zhuang Wang, Siqi Liu, Hao Wu, Meng Li, Xiao‐Lei Shi, Wei‐Nan Xie, Zhi‐Gang Chen, Qingfeng Liu   +11 more
wiley   +1 more source

Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers

, 2009
We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface.
Zhou ZQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn, Xu YQ, Niu ZC, Zhou ZQ, Tang B, Hao RT, Ren ZW   +6 more
core  

Scaling growth rates for perovskite oxide virtual substrates on silicon

Nature Communications, 2019
A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid ...
Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert   +5 more
doaj   +1 more source