Results 111 to 120 of about 3,923,319 (288)
8. European workshop on molecular beam epitaxy Abstracts book
, 1995 Centro de Informacion y Documentacion Cientifica (CINDOC). C/Joaquin Costa, 22. 28002 Madrid.
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Advanced Electronic Materials, EarlyView.The structural characteristics and resonant mechanical behavior of suspended microbridges comprised of single‐crystalline SrTiO3 that has been grown on silicon are presented. Due to differences in thermal expansion between the SrTiO3 and silicon, we find that the resonant frequencies of the microbridges are not only enhanced, but also hyper‐sensitive ...
Deepa Guragain +8 more
wiley +1 more source
Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
, 2009 We investigate the molecular beam epitaxy growth of GaSb films on GaAs substrates using AlSb buffer layers. Optimization of AlSb growth parameter is aimed at obtaining high GaSb crystal quality and smooth GaSb surface.
Zhou ZQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct POB 912 Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn +6 more
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Automated Spin‐Assisted Layer‐by‐Layer Epitaxy Produces Highly Oriented Mixed‐Linker MOF Thin Films
Angewandte Chemie International Edition, EarlyView.An automated spin‐assisted layer‐by‐layer growth method enables rapid fabrication of highly oriented Zn2BDC2DABCO metal‐organic framework thin films under ambient conditions. Correlative characterization confirms excellent reproducibility, uniform film formation, and exceptional out‐of‐plane orientation exceeding 85%.
Eleonora Afanasenko +13 more
wiley +1 more source
Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy
, 1996 The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and ...
He HJ +4 more
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Self‐Assembled Telecom Color Centers in Silicon and Their Growth Environment
Advanced Physics Research, EarlyView.Influence of the growth pressure during the formation of self‐assembled color centers in silicon grown by molecular beam epitaxy at ultra‐low temperatures on the color center's photoluminescence spectral signature. The growth pressure crucially determines color center selectivity, as evidenced by G‐centers, W‐centers, and T‐centers, matrix purity, and ...
Jacqueline Marböck +9 more
wiley +1 more source
Photoluminescence of ingaas/inp grown by molecular beam epitaxy
Semina: Ciências Exatas e Tecnológicas, 2004 Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate.
Harmand Jean Christophe +8 more
doaj
Molecular beam epitaxy of III-V compounds
, 2022 S.66-80A new technique for epitaxial growth of thin semiconductor films, molecular beam epitaxy (MBE), provides superior control over composition, thickness and doping profile in the direction of growth on an atomic scale.
Kunzel, H.
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Advanced Physics Research, EarlyView.A pure inverse spin Hall effect (ISHE) is demonstrated in ferromagnetic Ni₈₀Fe2₀/YIG heterostructures via the longitudinal spin Seebeck effect. By employing symmetry‐controlled geometries and reference samples, anomalous Nernst contributions are quantitatively eliminated, revealing intrinsic spin–charge conversion in Ni₈₀Fe2₀.
Hyeon‐Jin Lee +6 more
wiley +1 more source
Advanced Physics Research, EarlyView.The mechanism and kinetics of selective GaAs growth on Si nanotip wafers via nanoheteroepitaxy were investigated as a function of pitch (center‐to‐center nanotip spacing). The pitch dependence reveals distinct surface‐diffusion‐controlled regimes, demonstrating that lateral Ga adatom transport on the SiO2 mask governs material redistribution and ...
Adriana Rodrigues +6 more
wiley +1 more source