Results 111 to 120 of about 29,757 (249)
8. European workshop on molecular beam epitaxy Abstracts book
Centro de Informacion y Documentacion Cientifica (CINDOC). C/Joaquin Costa, 22. 28002 Madrid.
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Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices [PDF]
The interband cascade (IC) family of devices has been extended beyond mid-infrared lasers to include photovoltaic (PV) and photodetector (PD) devices.
Ye, Hao
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MXene‐based electrodes are established as high‐performance electrochemical energy storage materials. Sustainable energy storage systems are enabled through biologically derived MXene synthesis routes. Electrochemical kinetics and charge storage are enhanced by biomimetic MXene structures.
Shajjadur Rahman Shajid +3 more
wiley +1 more source
Development and modeling of a solid‐state microdosimeter for proton therapy applications
Precision Radiation Oncology, EarlyView.
Dante Guido Mercado +7 more
wiley +1 more source
The structure, properties, preparation methods, and characterization techniques of BP. As a typical 2D layered material, black phosphorus (BP) demonstrates exceptional promise in various fields, particularly in energy storage for alkali metal‐ion batteries. However, its distinctive structure and properties, together with the compositional complexity of
Yunqing Wang +7 more
wiley +1 more source
Photoluminescence of ingaas/inp grown by molecular beam epitaxy
Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate.
Harmand Jean Christophe +8 more
doaj
Phase Separation Prevents the Synthesis of VBi2Te4 by Molecular Beam Epitaxy. [PDF]
Altena M +3 more
europepmc +1 more source
Nonclassical crystal growth via particle attachment and fusion yields metal–organic framework crystals with multidomain morphologies while retaining single crystallinity. Amorphous particles attach at crystal edges, crystallize, and align with the lattice, driving anisotropic growth, curved surfaces, and cavities.
Hadar Nasi +12 more
wiley +1 more source
GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method
High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as
Li XB +4 more
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Growth of low-density InAs/GaAs quantum dots on a substrate with an intentional temperature gradient by molecular beam epitaxy [PDF]
InAs was deposited by molecular beam epitaxy (MBE) on a GaAs substrate with an intentional temperature gradient from centre to edge. Two-dimensional (2D) to three-dimensional (3D) morphology evolution was found along the direction in which the substrate ...
Jin P +3 more
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