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Application of reflectance difference spectroscopy to molecular‐beam epitaxy growth of GaAs and AlAs
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 1988D E Aspnes, Aspnes D E, Harbison J P
exaly
Limited thickness epitaxy in GaAs molecular beam epitaxy near 200 °C
Applied Physics Letters, 1991Eaglesham D J, Pfeiffer L N, West K W
exaly
Epitaxial Growth of CdTe on Si by Molecular Beam Epitaxy
Physicalia Magazine, 2008Samain, Louise +4 more
openaire +2 more sources

