Results 101 to 110 of about 3,923,319 (288)

Effects of Doping, Disorder, and Compensation on Electron Conduction in Si‐Doped k‐Ga2O3 Close to the Metal‐to‐Insulator Transition

Advanced Electronic Materials, EarlyView.
Self‐compensation effects attributed to doping‐dependent shift‐defects at APBs Validation of Hall data for VRH transport near the MIT Persistence of VRH transport for any SiH4 flow in Si‐doped κ‐Ga2O3 due to high compensation coupling transport and EPR data as strategy to study electronic properties and doping T‐dependence of transport data agrees with
Antonella Parisini, Hans Jürgen von Bardeleben, Ildicò Cora, Zsolt Fogarassy, Paola Alippi, Vincenzo Fiorentini, Ian Vickridge, Piero Mazzolini, Alessio Bosio, Roberto Fornari   +9 more
wiley   +1 more source

Scaling growth rates for perovskite oxide virtual substrates on silicon

Nature Communications, 2019
A scalable method for the growth of perovskite oxides thin films on silicon is desirable for integration of buffer layers in devices. Here the authors demonstrate the stoichiometric growth of thin SrTiO3 layers on silicon at high growth rates by hybrid ...
Jason Lapano, Matthew Brahlek, Lei Zhang, Joseph Roth, Alexej Pogrebnyakov, Roman Engel-Herbert   +5 more
doaj   +1 more source

Te(100) by molecular beam epitaxy

, 1987
p-type doping of HgCdTe(100) layers with lithium during growth by molecular beam epitaxy is reported. Hall measurements have been performed on these layers between 300 and 30 K. The Li concentration is found to increase with the Li cell temperature.
M. Boukerche, I. K. Sou, Sivananthan, S., Mahavadi, K. K., Faurie, J. P., K. K. Mahavadi, Wijewarnasuriya, P. S., Kim, Y. J., P. S. Wijewarnasuriya, S. Sivananthan, Boukerche, M., Y. J. Kim, J. P. Faurie, Sou, I. K.   +13 more
core   +1 more source

Combinatorial Survey of Structural Phase Distribution and Magnetism in Fe‐Ge‐Te Composition‐Spread Thin Film Libraries

Advanced Electronic Materials, EarlyView.
ABSTRACT Magnetic 2‐dimensional (2D) van der Waals (vdW) materials have garnered tremendous attention. The vdW ferromagnet Fe5Ge1Te2 has a Curie temperature Tc of ≈ 270 K, which is tailorable by tuning the stoichiometry and the Fe deficiency to reach room temperature.
Chih‐Yu Lee, Takahiro Yamazaki, Peng Yan, Ryan Kim, Masato Kotsugi, Efrain E. Rodriguez, Joseph W. Bennett, Ichiro Takeuchi   +7 more
wiley   +1 more source

Atomic Scale Control of Thermal Conductivity in LaMnO3/SrMnO3 Superlattices

Advanced Electronic Materials, EarlyView.
Interface‐dominated cross‐plane thermal transport in [(LaMnO3)m/(SrMnO3)n]10 superlattices can be controlled by the octahedral rotation/tilt angle φOOR of the MnO6 octahedra, which as well is controlled by the “m/n” ratio. ABSTRACT We report atomic scale structure and phonon thermal transport in (LaMnO3)m/(SrMnO3)n/SrTiO3(100) superlattices (LMO/SMO ...
H. Ulrichs, V. Roddatis, U. Roß, J. P. Bange, D. Meyer, S. Lopatin, V. Radisch, D. Metternich, I. V. Maznichenko, S. Ostanin, R. Egoavil, I. Lazić, V. Moshnyaga   +12 more
wiley   +1 more source

Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy

Nanoscale Research Letters, 2010
We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings.
Somaschini C, Bietti S, Fedorov A, Koguchi N, Sanguinetti S   +4 more
doaj   +1 more source

Real‐Time Observation of Thermal Surface Recovery in SrVO3

Advanced Electronic Materials, EarlyView.
Thermal annealing under ultra‐high vacuum enables controlled recovery of the intrinsic surface state of SrVO3 thin films. Real‐time in situ X‐ray photoelectron spectroscopy reveals a sharp transition from an oxidized near‐surface region to a predominantly V4+ electronic state.
Amit Cohen, Jonathan Ludwick, Ward Yahya, Maria Baskin, Lishai Shoham, Tyson C. Back, Lior Kornblum   +6 more
wiley   +1 more source

Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy

Nanoscale Research Letters, 2010
We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings.
Fedorov A, Somaschini C, Bietti S, Koguchi N, Sanguinetti S   +4 more
doaj   +1 more source

Ge composition saturation behavior during low-temperature Si1-xGex growth by disilane and solid Ge molecular beam epitaxy

, 1997
Ge composition dependence on the Ge cell temperature has been studied during the growth of Si1-xGex by disilane and solid Ge molecular beam epitaxy at a substrate temperature of 500 degrees C.
Liu JP, Liu JP CHINESE ACAD SCIINST SEMICONDCTR MAT SCIPOB 912BEIJING 100083PEOPLES R CHINA., Kong MY, Li JP, Liu XF, Sun DZ   +5 more
core  

Atomic‐Scale Mechanisms of Anisotropic Thermal Decomposition in GeSn Alloys With Stepwise Pinning

Advanced Electronic Materials, EarlyView.
Combining in situ TEM with DFT calculations, this work elucidates atomic‐scale anisotropic thermal decomposition in GeSn films, identifying laminar receding in defect‐free regions and stepwise pinning at stacking faults. Driven by crystallographic anisotropy and defect‐mediated energetic penalties, these findings establish a physical framework for ...
YiXin Wang, Qi Liu, XiYan Chang, Chi Xu, Tao Wang, XinZheng Li, ChunLai Xue   +6 more
wiley   +1 more source