Results 101 to 110 of about 29,757 (249)
Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2
Small, EarlyView.The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid +13 more
wiley +1 more source
Excess arsenic in GaAs grown at low temperatures by molecular beam epitaxy
, 1996 The structural properties of GaAs grown at low temperatures by molecular beam epitaxy (LTMBE GaAs) were studied. The excess arsenic atoms in LTMBE GaAs exist in the form of arsenic interstitial couples (i,e, two ns atoms share the one host site), and ...
He HJ +4 more
core
Vibrational Exfoliation of 2D Materials
Small, EarlyView.Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani +5 more
wiley +1 more source
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
, 2009 Short period InAs(4 ML)/GaSb(8 ML) superlattices (SLs) with InSb- and mixed-like (or Ga(1-x)In(x)As(1-)ySb(y)-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature.
Sun WG +6 more
core
Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy
Nanoscale Research Letters, 2010 We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings.
Somaschini C +4 more
doaj +1 more source
Journal of Microscopy, EarlyView.Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley +1 more source
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
Nanoscale Research Letters, 2010 We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings.
Fedorov A +4 more
doaj +1 more source
Recent Development in Solar‐to‐Hydrogen Conversion Systems
WIREs Energy and Environment, Volume 15, Issue 3, September 2026.This review compares three solar‐driven hydrogen production methods, photocatalysis (PC), photoelectrochemical cells (PEC), and photovoltaic–electrochemical (PV–EC) systems by examining their mechanisms, materials, stability, and efficiency. Nanocrystal‐based PC catalysts achieved the highest quantum efficiency (94%), while PV–EC and Si nanowire PEC ...
Rabia Zafar Ali +3 more
wiley +1 more source
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
, 2001 The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE).
Tong SY +6 more
core
Advanced Energy Materials, Volume 16, Issue 25, 1 July 2026.Flexible n‐type Bi2Te3 thin films require improved room‐temperature figure of merit (ZT) and mechanical stability. We show that synergistic Bi–Te antisite tuning and crystalline–amorphous hybridization optimizes carrier concentration, mobility, and phonon scattering.
Bo‐Cheng Wang +8 more
wiley +1 more source