Results 101 to 110 of about 82,642 (308)
Advanced Energy Materials, EarlyView.Flexible n‐type Bi2Te3 thin films require improved room‐temperature figure of merit (ZT) and mechanical stability. We show that synergistic Bi–Te antisite tuning and crystalline–amorphous hybridization optimizes carrier concentration, mobility, and phonon scattering.
Bo‐Cheng Wang +8 more
wiley +1 more source
Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review
Физико-химические аспекты изучения кластеров, наноструктур и наноматериаловThis review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
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k‐Selective Electrical‐to‐Magnon Transduction with Finite‐Element‐Resolved Sub‐Micron Nanoantennas
Advanced Physics Research, EarlyView.We introduce a coupled finite‐element‐finite‐difference framework that links impedance‐matched nanoantenna geometries to propagating spin‐wave dynamics, capturing skin effects, proximity effects, and taper leakage beyond uniform‐current models. Applied to coplanar‐waveguide and stripline nanoantennas on yttrium‐iron‐garnet, the simulations achieve ...
Andreas Höfinger +11 more
wiley +1 more source
EPJ Web of Conferences, 2017 Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied.
Novikova N.N. +4 more
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Emergent Spin Hall Quantization and High‐Order van Hove singularities in Square‐Octagonal MA2Z4
Advanced Physics Research, EarlyView.Square‐octagonal MA2Z4 (M = Mo/W, A = Si/Ge, Z = pnictogen) monolayers are predicted to realize quantum spin Hall insulators with nearly quantized spin Hall conductivity enabled by an emergent spin U(1) quasi‐symmetry. Materials with Z = As and Sb host quasi‐flat bands with high‐order van Hove singularities near the Fermi level, making them promising ...
Rahul Verma +3 more
wiley +1 more source
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
Nano Letters, 2017 We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers.
Sergio Fernández-Garrido +12 more
openaire +4 more sources
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.The structure, properties, preparation methods, and characterization techniques of BP. As a typical 2D layered material, black phosphorus (BP) demonstrates exceptional promise in various fields, particularly in energy storage for alkali metal‐ion batteries. However, its distinctive structure and properties, together with the compositional complexity of
Yunqing Wang +7 more
wiley +1 more source
The Dimensional Revolution of Phosphorus: From Allotropicity to Battery System Applications
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Phosphorus‐based materials are promising high‐capacity anodes classified by dimension (0D–3D) to systematically explore their properties and composite strategies. When combined with materials such as carbon to form heterostructures, the electrical conductivity and stability are effectively enhanced.
Shuhan Zhang +8 more
wiley +1 more source
Molecular beam epitaxy of Cd3As2 on a III-V substrate
APL Materials, 2016 Epitaxial, strain-engineered Dirac semimetal heterostructures promise tuning of the unique properties of these materials. In this study, we investigate the growth of thin films of the recently discovered Dirac
Timo Schumann +3 more
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