Gas source molecular beam epitaxy growth and characterization of modulation-doped field-effect transistor structures [PDF]
, 1997 C. Besikci +6 more
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Molecular beam epitaxy growth of few-layer stanene [PDF]
, 2022 Yunyi Zang, Kejing Zhu, Lin Li, Ke He
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Advances in Gate Dielectrics for 2D Electronics
physica status solidi (RRL) – Rapid Research Letters, EarlyView.This review discusses advanced gate dielectric integration for 2D electronic devices, including layered and nonlayered dielectric materials, while highlighting strategies such as seed‐assisted ALD, transfer methods, and in situ oxidation. By focusing on interface engineering and materials innovation, new routes for scalable, high‐performance 2D ...
Moon‐Chul Jung +2 more
wiley +1 more source
Concentric Multiple Rings by Droplet Epitaxy: Fabrication and Study of the Morphological Anisotropy
Nanoscale Research Letters, 2010 We present the Molecular Beam Epitaxy fabrication of complex GaAs/AlGaAs nanostructures by Droplet Epitaxy, characterized by the presence of concentric multiple rings.
Somaschini C +4 more
doaj +1 more source
Study of process technology for GaAlAs/GaAs heteroface solar cells [PDF]
Two processes were considered: the infinite melt process and the finite melt process. The only technique that is developed to the point that 10,000 cells could be produced in one year is the infinite melt liquid phase epitaxy process. The lowest cost per
Almgren, D. W. +3 more
core +1 more source
Thin Fluoride Insulators for Improved 2D Transistors: From Deposition Methods to Recent Applications
physica status solidi (RRL) – Rapid Research Letters, EarlyView.2D materials hold significant promise for next‐generation electronic and optoelectronic devices, but suitable gate dielectrics are still a challenge. Fluoride insulators, offering inert, dangling‐bond‐free surfaces, have recently emerged as strong candidates. This review covers recent publications on high‐quality fluoride thin‐film deposition and their
Behzad Dadashnia +3 more
wiley +1 more source
Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy
Nanoscale Research Letters, 2010 We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy: concentric triple quantum rings.
Fedorov A +4 more
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Molecular beam epitaxy of III-V compounds: a comprehensive bibliography, 1958-1983edited by K. Ploog [PDF]
, 1985 J. H. Robertson
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Two‐step annealing process drives high thermoelectric performance of n‐type Bi2Te3 flexible films
Responsive Materials, EarlyView.To address the relatively low carrier mobility in n‐type Bi2Te3 films prepared by magnetron sputtering, we developed a two‐step annealing process, including in situ and post‐annealing heat treatment. This method yields a high mobility (132.54 cm2 V−1 s−1) and S2σ (14.5 μW cm−1 K−2) by promoting pronounced grain growth and strengthening the preferred ...
Liang‐Cao Yin +11 more
wiley +1 more source
Low Temperature Site‐Specific Pulsed Laser Annealing of MoS2
Small, EarlyView.The application of laser pulses, of extremely short duration, is investigated as a potential new method to modify the atomic structure of ultrathin 2D materials for use in the creation of future electrical devices. The process is efficient, offering a site‐specific functionality, where regions of an electronic device that only requires annealing is ...
Nazar Farid +13 more
wiley +1 more source