Phase Separation Prevents the Synthesis of VBi2Te4 by Molecular Beam Epitaxy. [PDF]
Nanomaterials (Basel), 2023 Altena M +3 more
europepmc +1 more source
Interfaces in InAs/GaSb Superlattices Grown by Molecular Beam Epitaxy
, 2009 Short period InAs(4 ML)/GaSb(8 ML) superlattices (SLs) with InSb- and mixed-like (or Ga(1-x)In(x)As(1-)ySb(y)-like) interfaces (IFs) are grown by molecular-beam epitaxy (MBE) on (001) GaSb substrates at optimized growth temperature.
Sun WG +6 more
core
Molecular Beam Epitaxy of InAs, GaSb, AlSb Structures for Interband Cascade Devices [PDF]
, 2016 The interband cascade (IC) family of devices has been extended beyond mid-infrared lasers to include photovoltaic (PV) and photodetector (PD) devices.
Ye, Hao
core
Two‐Dimensional van der Waals Antiferromagnets: Fabrication, Probes, Control, and Applications
Advanced Physics Research, EarlyView.Two‐dimensional van der Waals antiferromagnets are emerging as versatile platforms for spintronic, optoelectronic, and quantum devices. This review summarizes recent progress in their fabrication, magnetic characterization, fields, interfacial engineering, chemical modification, and representative applications.
Huangyu Wu +10 more
wiley +1 more source
Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy
Nature CommunicationsMolecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains.
Yuki Sato +13 more
doaj +1 more source
Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride. [PDF]
ACS Omega, 2023 Szczerba AK +5 more
europepmc +1 more source
Current-induced migration of surface adatoms during GaN growth by molecular beam epitaxy
, 2001 The influence of electric fields on surface migration of Gallium (Ga) and Nitrogen (N) adatoms is studied during GaN growth by molecular beam epitaxy (MBE).
Tong SY +6 more
core
Strain‐Tunable Photoluminescence From Ge Quantum Dots on Si Nanotips for CMOS‐Compatible Photonics
Advanced Physics Research, EarlyView.This work studies strain in Ge quantum dots grown on Si nanotips using photoluminescence, X‐ray diffraction, and band structure calculations. It shows how emission changes with dot size, evaluates strain in the dot and substrate, and explains the role of direct and indirect transitions in the optical behavior.
Diana Ryzhak +10 more
wiley +1 more source
The Interplay of Crystal‐Field Transitions and Exchange Spin Dynamics in a Ferrimagnet
Advanced Physics Research, EarlyView.Temperature‐dependent THz spectroscopy reveals strong hybridization between Yb3+ CEF excitations and Yb–Fe exchange dynamics in Gd3/2Yb1/2BiFe5O12. Near the magnetization compensation temperature, spectral weight is redistributed between the coupled modes, while the Yb–Fe exchange mode exhibits an anomalous redshift upon cooling due to CEF‐mediated ...
Arpita Dutta +3 more
wiley +1 more source
Carbon Energy, EarlyView.Chalcogen‐based compounds are explored as versatile tools to enhance the stability and performance of halide perovskites. Their roles in defect passivation, ion migration suppression, and interface engineering are analyzed, along with impacts on device efficiency.
Atanu Jana +4 more
wiley +1 more source