Results 121 to 130 of about 29,757 (249)
Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride. [PDF]
ACS Omega, 2023 Szczerba AK +5 more
europepmc +1 more source
Simultaneous Deposition of Different Phase‐Change Alloys Through a Nanopillars Shadow Procedure
physica status solidi (RRL) – Rapid Research Letters, Volume 20, Issue 7, July 2026.A deposition strategy enabling controlled nanoscale stoichiometry modulation in Ge‐Sb‐Te phase‐change materials is presented. Directional elemental fluxes and shadowing effects induced by nanopillar arrays generate distinct Ge‐, Sb‐, and Te‐deficient regions within a single specimen.
Giuseppe D’Arrigo +7 more
wiley +1 more source
Nanophotonics, Volume 15, Issue 12, 25 June 2026.A low‐energy focused ion beam process achieves localized spectral modification of InAs quantum dots. By leveraging low ion straggle and a compact damage volume, this methodology offers unique spatial control and accuracy. This maskless approach provides a scalable platform for site‐selective engineering for advanced photonic integrated circuits and ...
Mehdi Ahmadian +8 more
wiley +1 more source
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
, 1998 Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources.
Acosta-Ortiz SE +6 more
core
Superconductivity and suppressed monoclinic distortion in FeTe films enabled by higher-order epitaxy
Nature CommunicationsMolecular beam epitaxy enables the growth of thin film materials with novel properties and functionalities. Typically, the lattice constants of films and substrates are designed to match to minimise disorders and strains.
Yuki Sato +13 more
doaj +1 more source
A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers
physica status solidi (a), Volume 223, Issue 11, 10 June 2026.Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo +4 more
wiley +1 more source
Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy
, 1998 InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode.
Liang JB +5 more
core
, 1999 Self-assembled InxGa1-xAs quantum dots (QDs) on (311) and (100) GaAs surfaces have been grown by conventional solid source molecular beam epitaxy. Spontaneously ordering alignment of InxGa1-xAs QDs with lower In content around 0.3 has been observed on As-
Xu B +5 more
core
Molecular beam epitaxy growth of IrO2 using plasma-only oxidation
APL MaterialsGrowth of IrO2 films via molecular beam epitaxy (MBE) using an oxygen plasma as the sole oxidant is demonstrated for the first time. We investigate the oxidizing conditions required for IrO2 by characterizing the species present in the plasma using ...
D. Sacksteder +4 more
doaj +1 more source
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
, 2007 We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality ...
Xiong, YH +8 more
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