Results 141 to 150 of about 3,923,319 (288)
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy. [PDF]
Nurzal N, Hsu TY, Susanto I, Yu IS.
europepmc +1 more source
Self-assembled InxGa1-xAs quantum dots (QDs) on (311) and (100) GaAs surfaces have been grown by conventional solid source molecular beam epitaxy. Spontaneously ordering alignment of InxGa1-xAs QDs with lower In content around 0.3 has been observed on As-
Xu B +5 more
core
Borophene‐based sensing platforms: Pioneering ultrasensitive detection
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley +1 more source
Overcoming spectral limits of perovskite photodetectors for the infrared region
Infrared (IR) photodetectors are vital for modern optoelectronics, but traditional inorganic semiconductors face limitations in cost, processing, and bandgap tunability. This review provides a summary of advanced strategies to extend metal halide perovskites into the IR region, categorizing approaches into intrinsic material engineering, physical ...
Jiean Li +4 more
wiley +1 more source
Freestanding epitaxial SrTiO3 nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. [PDF]
Yoon H +14 more
europepmc +1 more source
Recent progress of the exchange bias based on 2D van der Waals ferromagnet
Ultrathin magnetic materials could help make smaller, energy‐efficient memories, but their magnetic states must remain stable and controllable. This review brings together recent research on exchange bias, a magnetic pinning effect in layered materials, and explains how interfaces and electrical, thermal or mechanical controls can tune it, with optical
Wajahat Ali, Shaojie Hu
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Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy. [PDF]
Gu Y +7 more
europepmc +1 more source
Layer‐controlled two‐dimensional perylene‐derivative molecular crystals grow by van der Waals vapor‐phase epitaxy and show near‐unity photoluminescence quantum yields. In hybrid structures with TMDCs, the carrier relaxation can be tuned from charge transfer to Förster resonance energy transfer.
Huijuan Zhao +12 more
wiley +1 more source
Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. [PDF]
Pantle F +6 more
europepmc +1 more source
A Schottky photodiode based on (Al0.14Ga0.86)2O3 was developed, in which the sensing and processing functions were temporally decoupled through bias voltage modulation. By integrating single‐pixel imaging with a reservoir computing architecture, a comprehensive intelligent vision system was constructed.
Hongbin Wang +10 more
wiley +1 more source

