Results 141 to 150 of about 29,757 (249)

Correction to "WSe₂ Monolayers Grown by Molecular Beam Epitaxy on hBN". [PDF]

Nano Lett
Kucharek J, Raczyński M, Bożek R, Kaleta A, Kurowska B, Bilska M, Kret S, Taniguchi T, Watanabe K, Kossacki P, Goryca M, Pacuski W.   +11 more
europepmc   +1 more source

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor. [PDF]

ACS Omega, 2023
Jarosz D, Stachowicz M, Krzeminski P, Ruszala M, Jus A, Sliz P, Ploch D, Marchewka M.   +7 more
europepmc   +1 more source

GaInNAs/GaAs quantum well lasers grown by solid-source molecular beam epitaxy

, 2000
The growth of GaInNAs/GaAs quantum wells (QW) was investigated by solid-source molecular beam epitaxy. N was introduced by a dc-active plasma source. The effect of growth conditions such as on the N incorporation and photoluminescence (PL) intensity of ...
Li LH, Pan Z Chinese Acad Sci Inst Semicond State Key Lab Integrated Optoelect POB 912 Beijing 100083 Peoples R China., Pan Z, Lin YW, Wang XY   +4 more
core  

High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System. [PDF]

Nanomaterials (Basel)
Ye G, Zhang J, Chen Y, Ming M, Liao L, Geng X, Zhang X, Zhang J.   +7 more
europepmc   +1 more source

Strain-Balanced InAs/AlSb Type-II Superlattice Structures Growth on GaSb Substrate by Molecular Beam Epitaxy. [PDF]

Materials (Basel), 2023
Marchewka M, Jarosz D, Ruszała M, Juś A, Krzemiński P, Płoch D, Maś K, Wojnarowska-Nowak R.   +7 more
europepmc   +1 more source

Metamorphic InGaAs Quantum Well Laser Diodes at 1.5 mu on GaAs Grown by Molecular Beam Epitaxy

, 2009
We report a 1.5-mu m InGaAs/GaAs quantum well laser diode grown by molecular beam epitaxy on InGaAs metamorphic buffers. At 150 K, for a 1500 x 10 mu m(2) ridge waveguide laser, the lasing wavelength is centred at 1.508 mu m and the threshold current ...
Wang HL, Huang SS, Wang PF, Han Q, Tangring I, Ni HQ, Xiong YH, Wang SM, Niu ZC, Wu DH, Wang HL Chinese Acad Sci Inst Semicond State Key Lab Superlattice & Microstruct Beijing 10008 Peoples R China. E-mail Address: hlwang_19841220@163.com, Wu BP   +11 more
core  

WSe₂ Monolayers Grown by Molecular Beam Epitaxy on hBN. [PDF]

Nano Lett
Kucharek J, Raczyński M, Bożek R, Kaleta A, Kurowska B, Bilska M, Kret S, Taniguchi T, Watanabe K, Kossacki P, Goryca M, Pacuski W.   +11 more
europepmc   +1 more source

GaAs Based InAs/GaSb Superlattice Short Wavelength Infrared Detectors Grown by Molecular Beam Epitaxy

, 2009
InAs/GaSb superlattice (SL) short wavelength infrared photoconduction detectors are grown by molecular beam epitaxy on GaAs(001) semi-insulating substrates.
Xu YQ, Niu ZC, Tang B, Zhou ZQ, Xu YQ Chinese Acad Sci Inst Semicond State Key Lab Superlattices & Microstruct Beijing 100083 Peoples R China. E-mail Address: yingqxu@semi.ac.cn, Hao RT, Wang GW, Ren ZW   +7 more
core  

Controlling Mixed Mo/MoS₂ Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction. [PDF]

ACS Nano
Jeon E, Peheliwa VM, Hrůzová Kratochvílová M, Verhagen T, Lee YK.   +4 more
europepmc   +1 more source

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System. [PDF]

ACS Omega, 2022
May BJ, Kim JJ, Walker P, McMahon WE, Moutinho HR, Ptak AJ, Young DL.   +6 more
europepmc   +1 more source