Results 161 to 170 of about 3,923,319 (288)

Initial Optimization of the Growth Conditions of GaAs Homo-Epitaxial Layers after Cleaning and Restarting the Molecular Beam Epitaxy Reactor. [PDF]

ACS Omega, 2023
Jarosz D, Stachowicz M, Krzeminski P, Ruszala M, Jus A, Sliz P, Ploch D, Marchewka M.   +7 more
europepmc   +1 more source

Behavior of the First Layer Growth in GaAs Molecular Beam Epitaxy

, 2012
[[abstract]]The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting ...
Liu, D. G. ; Lee, C. P. ; Chang, K. H. ; Wu, Jenq-Shinn; Liou, D. C.
core  

Spin‐Polarized Magnetic Metal Electrodes for Magnetic Tunnel Junctions

MetalMat, EarlyView.
This perspective surveys spin‐polarized magnetic metal electrodes for magnetic tunnel junctions, systematically covering conventional ferromagnets, collinear/noncollinear antiferromagnets, and emergent altermagnets. It compares tunneling polarization origins across these classes and emphasizes that effective electrode polarization is a momentum ...
Zhiyuan Duan, Peixin Qin, Li Liu, Guojian Zhao, Sixu Jiang, Xiaoyang Tan, Jingyu Li, Xiaoning Wang, Ziang Meng, Zhiqi Liu   +9 more
wiley   +1 more source

High Electron Mobility in Ge Films Grown on Si (001) by an 8-Inch Molecular Beam Epitaxy System. [PDF]

Nanomaterials (Basel)
Ye G, Zhang J, Chen Y, Ming M, Liao L, Geng X, Zhang X, Zhang J.   +7 more
europepmc   +1 more source

Consideration of the Intricacies Inherent in Molecular Beam Epitaxy of the NaCl/GaAs System. [PDF]

ACS Omega, 2022
May BJ, Kim JJ, Walker P, McMahon WE, Moutinho HR, Ptak AJ, Young DL.   +6 more
europepmc   +1 more source

Photovoltaic Effect in a III‐IV‐V Compound Semiconductor

Progress in Photovoltaics: Research and Applications, EarlyView.
A large reduction of the GaAs band gap is obtained with incorporation of 6.5% Ge during epitaxy without introducing extended defects or composition inhomogeneity. Heterojunction solar cell devices were fabricated with 0.76‐V open circuit voltage and an internal quantum efficiency above 40% at energies below the bandgap of the GaAs emitter.
José M. Ripalda, Pablo Caño, Micaela Rodriguez‐Peña, Miguel Angel Sevillano‐Bendezú, Aurelia Trevisan, Raghavendra Juluri, Aitana Cano, Iván García, Alicia Gonzalo, Enrique Navarro, Jeronimo Buencuerpo, Paul Koenraad, Ana María Sanchez, Yolanda Gonzalez   +13 more
wiley   +1 more source

Controlling Mixed Mo/MoS₂ Domains on Si by Molecular Beam Epitaxy for the Hydrogen Evolution Reaction. [PDF]

ACS Nano
Jeon E, Peheliwa VM, Hrůzová Kratochvílová M, Verhagen T, Lee YK.   +4 more
europepmc   +1 more source

Tailoring in-Plane Permittivity Gradients by Shadow Mask Molecular Beam Epitaxy. [PDF]

Small Methods
Mukherjee S, Sitaram SR, Yu M, Wang X, Law S.   +4 more
europepmc   +1 more source

Magnetic-Field-Assisted Molecular Beam Epitaxy: Engineering of Fe₃O₄ Ultrathin Films on MgO(111). [PDF]

Materials (Basel), 2023
Dziwoki A, Blyzniuk B, Freindl K, Madej E, Młyńczak E, Wilgocka-Ślęzak D, Korecki J, Spiridis N.   +7 more
europepmc   +1 more source

Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy

, 2005
Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) study indicated that the band alignment of the ...
Zhang W, Han Q, He ZH, Ni HQ, Xu YQ, Wu RH, Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn, Niu ZC, Jiang DS, Xu XH   +9 more
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