Results 161 to 170 of about 29,757 (249)

Angle-resolved scatterometry combined with deep learning assisted in-situ monitoring of nanowire doping in molecular beam epitaxy process. [PDF]

Microsyst Nanoeng
Yang D, Song Y, Liang W, Zhang W, Shen W, Shen C, Liang K, Liu S.   +7 more
europepmc   +1 more source

AlGaN Quantum Disk Nanorods with Efficient UV-B Emission Grown on Si(111) Using Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel), 2022
Zhang D, Tao T, Sun H, Li S, Jia H, Yu H, Shao P, Li Z, Wu Y, Xie Z, Wang K, Long S, Liu B, Zhang R, Zheng Y.   +14 more
europepmc   +1 more source

Molecular Beam Epitaxy

SHINKU, 1973
openaire   +2 more sources

Homoepitaxial growth of isotopically enriched h¹⁰BN layers on h¹¹BN crystals by high-temperature molecular beam epitaxy. [PDF]

NPJ 2D Mater Appl
Bradford J, Collins AFM, Cheng TS, Shen J, Kerfoot J, Rance GA, Li J, Mellor CJ, Beton PH, Cassabois G, Dai S, Edgar JH, Novikov SV.   +12 more
europepmc   +1 more source

'Molecular Beam Epitaxy' on Organic Semiconductor Single Crystals: Characterization of Well-Defined Molecular Interfaces by Synchrotron Radiation X-ray Diffraction Techniques. [PDF]

Materials (Basel), 2022
Nakayama Y, Tsuruta R, Koganezawa T.
europepmc   +1 more source

Properties of GaN epilayers with various growth conditions grown by gas source molecular beam epitaxy

, 1998
GaN epilayers on sapphire (0001) substrates were grown by the gas source molecular beam epitaxy (GSMBE) method using ammonia (NH,) gas as the nitrogen source.
Li XB, Kong MY, Li XB,Chinese Acad Sci,Inst Semicond,POB 912,Beijing 100083,Peoples R China. 电子邮箱地址: xbli@red.semi.ac.cn, Zhu SR, Sun DZ, Zhang JP   +5 more
core  

Lead Catalyzed GaAs Nanowires Grown by Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel)
Shtrom IV, Sibirev NV, Soshnikov IP, Ilkiv IV, Ubyivovk EV, Reznik RR, Cirlin GE.   +6 more
europepmc   +1 more source

Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel), 2022
Zhang X, Xing Z, Yang W, Qiu H, Gu Y, Suzuki Y, Kaneko S, Matsuda Y, Izumi S, Nakamura Y, Cai Y, Bian L, Lu S, Tackeuchi A.   +13 more
europepmc   +1 more source

Kinetic modeling of N incorporation in GaInNAs growth by plasma-assisted molecular-beam epitaxy

, 2000
We have studied the growth of GaInNAs by a plasma-assisted molecular-beam epitaxy (MBE). It was found that the N-radicals were incorporated into the epitaxial layer like dopant atoms. In the range of 400-500 degrees C, the growth temperature (T-g) mainly
Li LH, Zhang W, Pan Z,Chinese Acad Sci,Inst Semicond,State Key Lab Integrated Optoelect,POB 912,Beijing 100083,Peoples R China., Pan Z, Lin YW, Wu RH   +5 more
core  

Mechanism of Self-Assembled Cubic InGaN/GaN Quantum Well Formation in Metal-Modulated Molecular Beam Epitaxy. [PDF]

Cryst Growth Des
Zscherp MF, Jentsch SA, Lider V, Chia M, Beyer A, Henss A, As DJ, Volz K, Chatterjee S, Schörmann J.   +9 more
europepmc   +1 more source