Results 161 to 170 of about 82,642 (308)

Highly‐Conductive and Micro‐Structured Transparent Glass Substrates for Efficient and Scalable Photoelectrochemical Applications

Advanced Science, Volume 13, Issue 28, 18 May 2026.
This work paves the way for practical photoelectrochemical water splitting devices by addressing key upscaling challenges related to substrate conductivity, absorber inhomogeneity, and mass transfer limitations. Integrated improvements in substrate engineering, material processing, device architecture, and operational conditions allow the development ...
Telmo da Silva Lopes, Jeffrey Capitão, Amin Khan, Leonardo Rodrigues, Dzmitry Ivanou, Tânia Lopes, Paula Dias, Adélio Mendes   +7 more
wiley   +1 more source

Freestanding epitaxial SrTiO₃ nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. [PDF]

Sci Adv, 2022
Yoon H, Truttmann TK, Liu F, Matthews BE, Choo S, Su Q, Saraswat V, Manzo S, Arnold MS, Bowden ME, Kawasaki JK, Koester SJ, Spurgeon SR, Chambers SA, Jalan B.   +14 more
europepmc   +1 more source

Cross-Sectional Evolution and Its Mechanism during Selective Molecular Beam Epitaxy Growth of GaAs Quantum Wires on (111)B Substrates [PDF]

, 2005
Isao Tamai, Taketomo Sato, Hideki Hasegawa   +2 more
openalex   +1 more source

Spin‐Selective Interface Engineering in Oxide–Ferromagnetic Junctions via Atomic‐Scale Oxygen Control

Advanced Science, Volume 13, Issue 25, 4 May 2026.
We show that interfacial oxygen at the MgO/Fe interface can be transformed from an uncontrolled variable into a tunable design parameter for spintronic junctions. Momentum microscopy provides direct access to the momentum‐ and spin‐resolved electronic structure beneath the insulating MgO layers, revealing how oxygen intercalation reshapes buried Fe ...
David Maximilian Janas, Mira Sophie Arndt, Jonah Elias Nitschke, Lasse Sternemann, Valentin Mischke, Vitaliy Feyer, Iulia Cojocariu, Daniel Baranowski, Alessandro Sala, Andreas Windischbacher, Peter Puschnig, Jan Dreiser, Stefano Ponzoni, Giovanni Zamborlini, Mirko Cinchetti   +14 more
wiley   +1 more source

Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. [PDF]

Nanoscale Adv, 2023
Pantle F, Becker F, Kraut M, Wörle S, Hoffmann T, Artmeier S, Stutzmann M.   +6 more
europepmc   +1 more source

Ga Adlayer Coverage and Surface Morphology Evolution during GaN Growth by Plasma-assisted Molecular Beam Epitaxy

, 2014
Liang Pang
openalex   +1 more source

Electrically Tunable Room‐Temperature Microwave Oscillations in GaN/AlN Triple‐Barrier Resonant Tunneling Diodes

Advanced Electronic Materials, Volume 12, Issue 9, 11 May 2026.
III‐nitride semiconductors have revolutionized optoelectronics, enabling transformative technologies such as high‐efficiency LEDs and lasers. However, their use in intersubband optoelectronics has remained limited. This work marks an important step forward by demonstrating highly coherent inter‐well resonant tunneling injection in III‐nitride ...
Jimy Encomendero, Naomi Pieczulewski, Eegene Chung, Vladimir Protasenko, David A. Muller, Debdeep Jena, Huili Grace Xing   +6 more
wiley   +1 more source

Structural, Magnetic, and Magneto-Optical Properties of Thin Films of BaM Hexaferrite Grown by Laser Molecular Beam Epitaxy. [PDF]

Materials (Basel), 2023
Krichevtsov B, Korovin A, Suturin S, Levin AA, Lobov I, Telegin A, Badalyan A, Sakharov V, Serenkov I, Dorogov M, Sokolov N.   +10 more
europepmc   +1 more source

Indium Gallium Arsenic Phosphide-Based Optoelectronics Grown By Gas Source Molecular Beam Epitaxy

, 2017
G.-J. Shiau
openalex   +1 more source

Magnetron Sputtering Synthesis of La‐Doped BiFeO3 Thin Films and Enhanced Exchange Bias in CoFeB/Bi1‐xLaxFeO3 Heterostructures

Advanced Physics Research, Volume 5, Issue 5, May 2026.
This study explores the epitaxial growth of high‐quality La‐doped BiFeO3 (BLFO) thin films at 550 °C using magnetron sputtering. The films exhibit good ferroelectric properties and low leakage current. A BLFO/CoFeB heterostructure is constructed, achieving an exchange bias field exceeding the coercive field at room temperature.
Zhiqin Zhou, Ligang Bai, Chen Qi, Xiaoyang Lin, Ivair Aparecido dos Santos, Gustavo Sanguino Dias, Luiz Fernanado Cótica, Weisheng Zhao, Yanxue Chen, Tianxiao Nie, Guodong Wei   +10 more
wiley   +1 more source