Results 151 to 160 of about 29,757 (249)

Morphology Evolution of (331)A High-Index Surfaces During Atomic Hydrogen Assisted Molecular Beam Epitaxy (MBE)

, 2008
Step like morphology of (331)A high-index surfaces during atomic hydrogen assisted molecular beam epitaxy (MBE) growth has been investigated. Atomic Force Microscope (AFM) measurements show that in conventional MBE, the step heights and terrace widths of
REN Zhengwei, NIU Zhihong, HE Zhenhong
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Mitigation of Structural Defects during the Growth of 2D van der Waals Chalcogenides by Molecular Beam Epitaxy. [PDF]

Small Methods
Zhang Q, Hilse M, Law S.
europepmc   +1 more source

Magnetic-Field-Assisted Molecular Beam Epitaxy: Engineering of Fe₃O₄ Ultrathin Films on MgO(111). [PDF]

Materials (Basel), 2023
Dziwoki A, Blyzniuk B, Freindl K, Madej E, Młyńczak E, Wilgocka-Ślęzak D, Korecki J, Spiridis N.   +7 more
europepmc   +1 more source

Growth and characterization of strained superlattices delta-GaNxAs1-x/GaAs by molecular beam epitaxy

, 2000
A series of superlattices delta-GaNxAs1-x/GaAs were grown by a DC plasma-N-2-assisted molecular beam epitaxy. The evolution of the surface reconstruction during the growth has been studied with the use of in situ reflection high-energy electron ...
Li LH, Zhang W, Pan Z, Pan Z,Chinese Acad Sci,Inst Semicond,Natl Res Ctr Optoelect Technol,POB 912,Beijing 100083,Peoples R China., Lin YW, Wu RH, Zhou ZQ, Wang YT   +7 more
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Tailoring in-Plane Permittivity Gradients by Shadow Mask Molecular Beam Epitaxy. [PDF]

Small Methods
Mukherjee S, Sitaram SR, Yu M, Wang X, Law S.   +4 more
europepmc   +1 more source

Wafer-scale integration of GaAs/AlGaAs core-shell nanowires on silicon by the single process of self-catalyzed molecular beam epitaxy. [PDF]

Nanoscale Adv, 2023
Minehisa K, Murakami R, Hashimoto H, Nakama K, Sakaguchi K, Tsutsumi R, Tanigawa T, Yukimune M, Nagashima K, Yanagida T, Sato S, Hiura S, Murayama A, Ishikawa F.   +13 more
europepmc   +1 more source

Behavior of the First Layer Growth in GaAs Molecular Beam Epitaxy

, 2012
[[abstract]]The first layer growth in GaAs molecular beam epitaxy has been studied by reflection high‐energy electron diffraction (RHEED). The time between the growth start and the first RHEED intensity peak is found to be dependent on the starting ...
Liu, D. G. ; Lee, C. P. ; Chang, K. H. ; Wu, Jenq-Shinn; Liou, D. C.
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Effect of Nitrogen Introduction during (101̅0) ZnO Plasma-Assisted Molecular Beam Epitaxy on the Film Properties. [PDF]

ACS Omega
Wang X, Zhou H, Wilks RG, Hsieh TE, Yang W, Zhang Y, Zhan H, Bai L, Zheng JC, Bär M, Kang J, Wang HQ.   +11 more
europepmc   +1 more source

Intrinsic Magnetic Proximity Effect at the Atomically Sharp Interface of Co_xFe_3-xO₄/Pt Grown by Molecular Beam Epitaxy. [PDF]

ACS Omega, 2023
Nodo S, Yamane I, Suzuki M, Okabayashi J, Yokokura S, Shimada T, Nagahama T.   +6 more
europepmc   +1 more source

Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum well grown by molecular beam epitaxy

, 2005
Photoluminescence study of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum wells (BQWs) grown by molecular beam epitaxy (MBE) were carried out. Temperature and excitation power dependent photoluminescence (PL) study indicated that the band alignment of the ...
Zhang W, Han Q, He ZH, Ni HQ, Xu YQ, Wu RH, Niu, ZC, Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China. 电子邮箱地址: zcniu@red.semi.ac.cn, Niu ZC, Jiang DS, Xu XH   +9 more
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