Results 151 to 160 of about 82,642 (308)
Interferometric second‐harmonic generation (SHG) imaging reveals the ubiquitous formation of antiparallel domains in CVD‐grown 2D hexagonal boron nitride. By resolving lattice orientation and SHG phase, hidden domain structures and disorder become visible over large areas. The SHG intensity quantitatively tracks crystalline quality across growth routes,
Yeri Lee +12 more
wiley +1 more source
Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy. [PDF]
Nurzal N, Hsu TY, Susanto I, Yu IS.
europepmc +1 more source
This study investigates thermally CVD‐deposited AlN/TiAlN dual‐layer coatings over a Si substrate, focusing on the temperature‐dependent process‐structure relationship. Systematic characterization reveals that a dense AlN interlayer combined with an optimally deposited TiAlN top layer provides enhancement in mechanical strength, tribological stability,
Soham Das +4 more
wiley +1 more source
Gain coupled DFB lasers with active layer grownon a corrugated substrate by molecular beam epitaxy
J. Robadey +6 more
openalex +2 more sources
UVB-emitting InAlGaN multiple quantum well synthesized using plasma-assisted molecular beam epitaxy [PDF]
Wei Kong +7 more
openalex +1 more source
Wafer‐Scale Single‐Crystal Boron Nitride: Synthesis and Integration in 2D Electronics
This Review highlights recent breakthroughs in wafer‐scale hBN synthesis and its integration into next‐generation 2D electronics. We analyze growth kinetics, epitaxial strategies, and stacking‐sequence control while correlating material quality with device performance.
Jaewon Wang, Soon‐Yong Kwon
wiley +1 more source
Fabrication of photovoltaic laser energy converterby MBE [PDF]
A laser-energy converter, fabricated by molecular beam epitaxy (MBE), was developed. This converter is a stack of vertical p-n junctions connected in series by low-resistivity, lattice matched CoSi2 layers to achieve a high conversion efficiency. Special
Chan, W. S., Lu, Hamilton, Wang, Scott
core +1 more source
Microwave Absorption for Detection of Dirac Fermions in SnTe Films
Microwave absorption can detect Dirac fermions in samples exposed to the atmosphere. Results showed that although topological surface states are robust against environmental degradation, they are not detectable by electrical transport measurements. Hence, microwave absorption can detect Dirac fermions even in samples whose surfaces have deteriorated ...
Wellington P. do Prado +8 more
wiley +1 more source
Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy. [PDF]
Gu Y +7 more
europepmc +1 more source
Interfacial intermixing in InAs/GaSb short-period-superlattices grown by molecular beam epitaxy [PDF]
E. Luna +5 more
openalex +1 more source

