Results 131 to 140 of about 82,642 (308)

Vibrational Exfoliation of 2D Materials

Small, EarlyView.
Vibrational energy folds, fractures and exfoliates atomically and molecularly thin materials. Combining experimentation and computational methods, this unique vibrational synthesis pathway is revealed. This process overcomes barriers of existing approaches by processing 1000 g/L dispersions without loss in yield.
Aadam Rabani, Faysal A. Khaleel, Fahad S. Al‐Gburi, Irwing Ramirez, Tomislav Friščić, Jason Stafford   +5 more
wiley   +1 more source

Phase Separation Prevents the Synthesis of VBi₂Te₄ by Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel), 2023
Altena M, Jansen T, Tsvetanova M, Brinkman A.   +3 more
europepmc   +1 more source

Epitaxy of ultrathin Fe3O4 films on SrTiO3(001): influence of growth parameters on the formation of coexisting (111)‐ and (001)‐oriented phases

Journal of Applied Crystallography, EarlyView.
Ultrathin Fe3O4 films grown on SrTiO3(001) were systematically studied with respect to film growth parameters to clarify the coexistence of (111) and (001) orientations. X‐ray diffraction analyses reveal the formation of an intermediate (111)‐oriented phase during the initial growth stage, which persists even after preferential (001) growth is ...
Andreas Alexander, Kevin Ruwisch, Jannis Thien, Alexander Weissbach, Tobias Pollenske, Bin Zhang, Fabiola Schulte, Olof Gutowski, Alina Vlad, Alessandro Coati, Joachim Wollschläger   +10 more
wiley   +1 more source

Photoluminescence of ingaas/inp grown by molecular beam epitaxy

Semina: Ciências Exatas e Tecnológicas, 2004
Photoluminescence (PL) measurements due to temperature and excitation power were carried out in as function of sample containing a In0,53Ga0,47. As layer, grown by Molecular Beam Epitaxy on an InP substrate.
Harmand Jean Christophe, Luiz Alberto Cury, Paulo Sérgio Soares Guimarães, Dari Oliveira Toginho Filho, Edson Laureto, José Leonil Duarte, Ivan Frederico Lupiano Dias, Luiz Carlos Poças, Élder Mantovani Lopes   +8 more
doaj  

Molecular Beam Epitaxy Growth of Cadmium Telluride Structures on Hexagonal Boron Nitride. [PDF]

ACS Omega, 2023
Szczerba AK, Kucharek J, Pawłowski J, Taniguchi T, Watanabe K, Pacuski W.   +5 more
europepmc   +1 more source

Investigation of the Reflectivity Spectrum of the a-Plane Oriented ZnO Epilayers Grown by Plasma-Assisted Molecular Beam Epitaxy from the Gaussian Distribution [PDF]

, 2017
Alioune Diouf
openalex   +1 more source

Determining bismuth content in GaAsBi alloys by energy‐dispersive X‐ray spectroscopy: A case study with multiple sets of k*‐factors for analytical transmission electron microscopy

Journal of Microscopy, EarlyView.
Abstract Measuring the bismuth (Bi) content of ternary gallium arsenide bismuthide (GaAsBi) alloys is important because it sensitively influences their bandgap, and Bi is known to segregate vertically to the surface and sometimes also laterally during growth, so elemental distribution maps need to be quantified.
T. Walther
wiley   +1 more source

Correlative Imaging Captures a Fusion Mechanism as the Origin of Single Crystals with Multidomain Appearance

Israel Journal of Chemistry, Volume 66, Issue 4, July 2026.
Nonclassical crystal growth via particle attachment and fusion yields metal–organic framework crystals with multidomain morphologies while retaining single crystallinity. Amorphous particles attach at crystal edges, crystallize, and align with the lattice, driving anisotropic growth, curved surfaces, and cavities.
Hadar Nasi, Maria Chiara di Gregorio, Ifat Kaplan‐Ashiri, Katya Rechav, Lothar Houben, Vlad Brumfeld, Irit Rosenhek-Goldian, Sidney R. Cohen, Xiao‐Meng Sui, Nir Kampf, Linda J. W. Shimon, Michal Lahav, Milko E. van der Boom   +12 more
wiley   +1 more source

Growth Conditions and Interfacial Misfit Array in SnTe (111) films Grown on InP (111)A Substrates by Molecular Beam Epitaxy [PDF]

Qihua Zhang, Maria Hilse, Wesley Auker, Jennifer L. Gray, Stephanie Law   +4 more
openalex   +1 more source

A Low‐Power Cryogenic Low‐Noise Amplifier for the Next‐Generation Quantum Computers

physica status solidi (a), Volume 223, Issue 11, 10 June 2026.
Next generation of quantum computers calls for reduced dc power dissipation of the cryogenic low‐noise amplifier (LNA) applied in reading out the superconducting qubits. This article reports on processing and evaluation of a 100‐nm gate length indium phosphide high electron mobility transistor (InP HEMT) technology used in the design of such LNAs.
Nelson Rebelo, Johan Bergsten, Arsalan Pourkabirian, Niklas Wadefalk, Jan Grahn   +4 more
wiley   +1 more source