Results 131 to 140 of about 3,923,319 (288)
Molecular beam epitaxy growth of IrO2 using plasma-only oxidation
APL MaterialsGrowth of IrO2 films via molecular beam epitaxy (MBE) using an oxygen plasma as the sole oxidant is demonstrated for the first time. We investigate the oxidizing conditions required for IrO2 by characterizing the species present in the plasma using ...
D. Sacksteder +4 more
doaj +1 more source
Optimization of metamorphic InGaAs quantum wells on GaAs grown by molecular beam epitaxy
, 2007 We investigate the molecular beam epitaxy growth of metamorphic InxGa(1-x)As materials (x up to 0.5) on GaAs substrates systematically. Optimization of structure design and growth parameters is aimed at obtaining smooth surface and high optical quality ...
Xiong, YH +8 more
core
Niobium‐Based Chalcogenides as Emerging Electrode Materials for Rechargeable Batteries
EcoEnergy, EarlyView.This review highlights recent advances in Nb‐based TMCs, covering their structure‐property relationships, synthesis strategies, electrochemical mechanisms, and energy‐storage applications. Emerging approaches including defect engineering, operando characterization, DFT modeling, and AI‐assisted design are discussed to accelerate the development of high‐
Narasimharao Kitchamsetti +3 more
wiley +1 more source
Gas source molecular beam epitaxy and thermal stability of Si1-xGex/Si superlattice materials
, 1998 Gas source molecular beam epitaxy has been used to grow Si1-xGex alloys and Si1-xGex/Si multi-quantum wells (MQWs) on (100) Si substrates with Si2H6 and GeH4 as sources.
Acosta-Ortiz SE +6 more
core
EcoEnergy, EarlyView.We report a 30 × 38 mm2 flexible thermoelectric device based on vertically aligned p/n Bi2Te3 thin films with high power factors of 31.0 and 20.3 μW cm−1 K−2. An optimized device geometry achieves a high normalized power density of 3.5 μW cm−2 K−2 through efficient thermal management, while maintaining excellent stability and modular scalability ...
Qingyi Liu +5 more
wiley +1 more source
Ordered InAs quantum dots in InAlAs matrix on (001) InP substrates grown by molecular beam epitaxy
, 1998 InAs self-organized quantum dots in InAlAs matrix lattice-matched to exactly oriented (001) InP substrates were grown by solid source molecular beam epitaxy (MBE) using the Stranski-Krastanow mode.
Liang JB +5 more
core
Hybrid Quantum Well/Quantum Dot Structure for Broad Spectral Bandwidth Emitters [PDF]
, 2014 This thesis details a hybrid quantum well (QW)/quantum dot (QD) active element for an application in broadband source. First of all, a literature review on the fundamentals of optical coherence tomography (OCT) and superluminescent light emitting ...
Chen, Siming
core
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
GaN epilayers grown at high growth rate using gas source molecular beam epitaxy method
, 1998 High-quality GaN epilayers have been grown by gas source molecular beam epitaxy using ammonia as the nitrogen source. During the growth, the growth rate is up to 1.2 mu m/h and can be varied from 0.3 to 1.2 mu m. The unintentional n-type doping as low as
Li XB +4 more
core
Electron, EarlyView.The underlying interface physics and engineering strategies across key POI material systems, including LiNbO3/Si, LiNbO3/SiC, LiNbO3/diamond, and AlN/diamond, were reviewed. The key engineering strategies such as atomic‐scale bonding optimization, nanostructuring, ultrathin phonon‐bridge interlayers, and ferroelectric domain wall engineering for ...
Yunjia Bao +6 more
wiley +1 more source