Results 131 to 140 of about 29,757 (249)

Droplet epitaxy of InGaN quantum dots on Si (111) by plasma-assisted molecular beam epitaxy. [PDF]

Discov Nano, 2023
Nurzal N, Hsu TY, Susanto I, Yu IS.
europepmc   +1 more source

Structural identification of a cubic phase in hexagonal GaN films grown on sapphire by gas-source molecular beam epitaxy

, 1998
The structural characteristics of gallium nitride (GaN) films grown on sapphire(0001) substrates by gas source molecular beam epitaxy (GSMBE) have been investigated using high-resolution synchrotron irradiation X-ray diffraction and cathodoluminescence ...
Li XB, Kong MY, Li XB,Chinese Acad Sci,Inst Semicond,912 Beijing,Beijing 100083,Peoples R China., Yoon SF, Sun DZ   +4 more
core  

NbN-based Josephson junctions grown by plasma-assisted molecular beam epitaxy

Communications Materials
Improved process for the growth of NbN by plasma-assisted molecular beam epitaxy (PAMBE) is needed for the fabrication of Josephson junctions, that are building blocks of qubits in quantum computers.
Artur Lachowski, Paweł Wolny, Krzysztof Dybko, Mikołaj Chlipała, Krzesimir Nowakowski-Szkudlarek, Mateusz Hajdel, Mikołaj Żak, Anna Feduniewicz, Marta Sawicka, Witold Chromiński, Ewa Grzanka, Czesław Skierbiszewski   +11 more
doaj   +1 more source

Investigation on the Optical Properties of Micro-LEDs Based on InGaN Quantum Dots Grown by Molecular Beam Epitaxy. [PDF]

Nanomaterials (Basel), 2023
Gu Y, Gong Y, Zhang P, Hua H, Jin S, Yang W, Zhu J, Lu S.   +7 more
europepmc   +1 more source

On the electrical and structural properties of boron delta layers in silicon [PDF]

This thesis describes the first successful growth of boron δ layers using silicon MBE. SIMS has been used to demonstrate that the layer widths are ∽2nm as has been confirmed by TEM.
Mattey, Nevil L.
core  

Freestanding epitaxial SrTiO₃ nanomembranes via remote epitaxy using hybrid molecular beam epitaxy. [PDF]

Sci Adv, 2022
Yoon H, Truttmann TK, Liu F, Matthews BE, Choo S, Su Q, Saraswat V, Manzo S, Arnold MS, Bowden ME, Kawasaki JK, Koester SJ, Spurgeon SR, Chambers SA, Jalan B.   +14 more
europepmc   +1 more source

Correction: Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates. [PDF]

Nanoscale Adv, 2023
Pantle F, Becker F, Kraut M, Wörle S, Hoffmann T, Artmeier S, Stutzmann M.   +6 more
europepmc   +1 more source

Structural, Magnetic, and Magneto-Optical Properties of Thin Films of BaM Hexaferrite Grown by Laser Molecular Beam Epitaxy. [PDF]

Materials (Basel), 2023
Krichevtsov B, Korovin A, Suturin S, Levin AA, Lobov I, Telegin A, Badalyan A, Sakharov V, Serenkov I, Dorogov M, Sokolov N.   +10 more
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Evolution of surface morphology and photoluminescence characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots grown by molecular beam epitaxy

, 2009
Evolution of surface morphology and optical characteristics of 1.3-mu m In0.5Ga0.5As/GaAs quantum dots (QDs) grown by molecular beam epitaxy (MBE) are investigated by atomic force microscopy (AFM) and photoluminescence (PL).
He ZH, Wei QX Shanxi Univ Dept Phys Taiyuan 030006 Peoples R China. E-mail Address: qx.wei@163.com, Niu ZC, Wei QX, Ren ZW   +4 more
core  

X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy. [PDF]

J Appl Crystallogr, 2023
Kaganer VM, Konovalov OV, Calabrese G, van Treeck D, Kwasniewski A, Richter C, Fernández-Garrido S, Brandt O.   +7 more
europepmc   +1 more source