Results 81 to 90 of about 29,757 (249)
Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review
This review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
doaj +1 more source
Borophene‐based sensing platforms: Pioneering ultrasensitive detection
Schematic Diagram of Performance Optimization Strategies and Sensing Application Characteristics of Two‐Dimensional Boron‐Based Materials in Novel Sensors. Abstract Borophene is an emerging two‐dimensional (2D) material. Since significant breakthroughs were achieved in the experimental synthesis of borophene, the exploration and development of ...
Chi Yuan, Yanpeng Ji, Yi Liu, Guoan Tai
wiley +1 more source
This review systematically summarizes two‐dimensional layered and nonlayered oxides, focusing on their synthesis, properties, and post‐Moore applications in transistors, gate dielectrics, optoelectronics, and ferroelectric/magnetic devices. It also discusses challenges including scalable growth and interface engineering, along with future industrial ...
Xinjie Hou +5 more
wiley +1 more source
Ordered InAs nanodots formed on the patterned GaAs substrate by molecular beam epitaxy
Ordered indium arsenide (InAs) nanodots are formed by molecular beam epitaxy (MBE) on patterned gallium arsenide (GaAs) substrates, which are prepared by implanting manganese (Mn) ions through anodic aluminum oxide (AAO) membranes into the GaAs wafers ...
Wang, ZG +5 more
core
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied.
Novikova N.N. +4 more
doaj +1 more source
Scale decomposition of molecular beam epitaxy [PDF]
5 figures, 1 ...
openaire +3 more sources
Revealing the Resonant Physics of Open Photonic Time Crystals
ABSTRACT Photonic time crystals (PTCs) are media whose permittivity is modulated periodically in time, enabling momentum bandgaps and parametric amplification of light. Their realization at the nanoscale can revolutionize the study of light‐matter interactions.
Adrià Canós Valero +5 more
wiley +1 more source
IMPLANTATION ENERGY SELECTION IN MOLECULAR-BEAM EPITAXY GAAS FILMS ON SI SUBSTRATES
GaAs films made by molecular beam epitaxy with thicknesses ranging from 0.9 to 1.25-mu-m on Si have been implanted with Si ions at 1.2 MeV to dose of 1 x 10(15)/cm2.
DONG AH +7 more
core
Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers.
Sergio Fernández-Garrido +12 more
openaire +4 more sources
Comb‐Driven Coherent Optical Transmitter for Scalable DWDM Interconnects
A comb‐driven coherent optical transmitter on a Si/SiN platform enables scalable DWDM interconnects by integrating ultra‐compact microring‐assisted modulators and interleavers. High‐baud coherent signaling achieves 400 Gb/s per wavelength and >$>$1 Tb/s multi‐channel transmission, with projected >$>$10 Tb/s per fiber, offering a path toward energy ...
Alireza Geravand +11 more
wiley +1 more source

