Results 81 to 90 of about 3,923,319 (288)

Constructing oxide interfaces and heterostructures by atomic layer-by-layer laser molecular beam epitaxy

npj Quantum Materials, 2017
Applied physics: New technique for oxide interfaces Recent advances in synthesizing and engineering oxide interfaces and heterostructures have provided a powerful strategy for creating new artificial structures exhibiting phenomena not possible in other ...
Qingyu Lei, Maryam Golalikhani, Bruce A. Davidson, Guozhen Liu, Darrell G. Schlom, Qiao Qiao, Yimei Zhu, Ravini U. Chandrasena, Weibing Yang, Alexander X. Gray, Elke Arenholz, Andrew K. Farrar, Dmitri A. Tenne, Minhui Hu, Jiandong Guo, Rakesh K. Singh, Xiaoxing Xi   +16 more
doaj   +1 more source

Van der Waals Heterostructures for Next‐Generation Spintronics: Multiferroic‐Mediated Magnetoelectric Properties

Advanced Science, EarlyView.
As CMOS technology approaches fundamental energy limits, new paradigms for low‐power information processing are required. Magnetic systems are attractive for their spin transport, yet current‐induced magnetization control is energy inefficient. Multiferroic heterostructures enable energy‐efficient electric field manipulation of magnetism.
Donghyeon Lee, Jiwoong Yang, Inhyeok Oh, Sanghan Lee   +3 more
wiley   +1 more source

Advances in Se Wide‐Bandgap Photovoltaics and TexSe1‐x SWIR Photodiodes

Advanced Science, EarlyView.
In this review, fundamental properties and current challenges in Se photovoltaics (PVs) for tandem and indoor PVs and TexSe1‐x alloys for short wave infrared photodiodes are discussed. A case is made for the practicality of elemental chalcogenide optoelectronics, and a pathway toward resolving the key challenges in these respective technologies is ...
Adam D. Alfieri, Deep Jariwala
wiley   +1 more source

Molecular beam epitaxy growth of InGaSb/AlGaAsSb strained quantum well diode lasers

, 2011
2μm InGaSb/AlGaAsSb strained quantum wells and a tellurium-doped GaSb buffer layer were grown by molecular beam epitaxy(MBE). The growth parameters of strained quantum wells were optimized by AFM, XRD and PL at77 K.
Tang, Bao, Guofeng Song, Zhang, Yu, Xu, Yun, Bao Tang, Yu Zhang, Yun Xu, Guowei Wang, Xu, Y.(xuyun@semi.ac.cn), Wang, Guowei, Song, Guofeng, Yingqiang Xu, Xu, Yingqiang   +12 more
core   +1 more source

A Reconfigurable Memristive Spiking Neuron Enabling Advanced Neuromorphic Computing

Advanced Science, EarlyView.
Pek Jun Tiw and co‐workers develop a reconfigurable memristive neuron that can exhibit four spiking behaviors with freely tunable spike train parameters. The neuron supports multiplexed spike encoding of multiple pieces of information. It also supports advanced neural network strategies, such as neural heterogeneity and dynamic mode switching ...
Pek Jun Tiw, Yuqi Li, Zhongyuan Li, Qihang Ding, Yuzhe Wang, Jiarong Wang, Yuchao Yang   +6 more
wiley   +1 more source

Magnetically Guided Macrophage Immunobots Coordinate Iron‐Metabolic Cascades and Immunogenic Ferroptosis for Tumor Immunotherapy

Advanced Science, EarlyView.
Magnetically guided macrophage immunobots integrate active tumor targeting with immunometabolic therapy. After systemic administration, magnetic actuation enhances immunobot retention and tumor penetration, while LPS‐functionalized FePt microrollers sustain M1‐like polarization through inflammatory and iron‐amplified oxidative signaling and trigger ...
Xirui Zeng, Yingfei Zhang, Chong Wu, Qijia Duan, Mengqi Fan, Kuan Wang, Shirong Cai, Immihan Ceren Yasa   +7 more
wiley   +1 more source

Advanced methods for growth thin films of GaAs1-x-yNxBiy: a review

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
This review summarizes the latest advances in the fabrication of thin films of GaAs1-x-yNxBiy solid solutions for potential applications in optoelectronics.
O.V. Devitsky
doaj   +1 more source

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Nano Letters, 2017
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers.
Fernandez-Garrido S., Ramsteiner M., Gao G., Galves L. A., Sharma B., Corfdir P., Calabrese Gabriele, De Souza Schiaber Z., Pfuller C., Trampert A., Lopes J. M. J., Brandt O., Geelhaar L.   +12 more
openaire   +4 more sources

Emergence of Unconventional Magnetic Order in Strain‐Engineered RuO2/TiO2 Superlattices

Advanced Science, EarlyView.
Epitaxial strain activates unconventional magnetism in rutile RuO2, absent in bulk or relaxed RuO2. Polarized neutron reflectometry with atomic‐layer resolution directly reveals finite magnetization confined to RuO2 layers in fully strained RuO2/TiO2 superlattices on TiO2 (110).
Seung Gyo Jeong, Seungjun Lee, Jin Young Oh, Bonnie Y. X. Lin, Anand Santhosh, Sehwan Song, Sungkyun Park, James M. LeBeau, Alexander J. Grutter, Woo Seok Choi, Tony Low, Valeria Lauter, Bharat Jalan   +12 more
wiley   +1 more source

Infrared reflection spectra of the films of topological insulator Pb1-xSnxSe on the substrates ZnTe/GaAs

EPJ Web of Conferences, 2017
Infrared reflectivity spectra of the 700 nm thick topological insulator Pb1-xSnxSe films grown by the molecular beam epitaxy technique on ZnTe/GaAs substrates were studied.
Novikova N.N., Yakovlev V.A., Kucherenko I.V., Karczewski G., Chusnutdinow S.   +4 more
doaj   +1 more source