Results 61 to 70 of about 29,757 (249)

Oxygen‐Assisted MOCVD Growth of Monolayer PtSe2 Films With Bandgap Opening for Semiconducting FET Channels

Advanced Science, EarlyView.
Monolayer PtSe2 films are successfully grown via optimized MOCVD, achieving uniform coverage over a 1.5 cm × 1.5 cm area. Oxygen‐assisted growth effectively removes carbon impurities, ensuring high film quality. Array‐level FETs based on monolayer PtSe2 channels demonstrate low off‐current and high ION/IOFF ratios, highlighting the potential of PtSe2 ...
Yuseok Kim, Hee‐Soo So, Minseok Yoo, Saeyoung Oh, Dongyoung Kim, Minseung Gyeon, Min‐Kyung Jo, Gichang Noh, Tae Soo Kim, Min‐gyu Kim, Jeongwon Park, Hyun‐Jun Chai, Minsoo Kang, Suhyun Kim, Ayoung Ham, Jaehyun Lee, Jongsun Lim, Seungwoo Song, Joon Young Kwak, Seunghwan Seo, Chang‐Soo Lee, Chang Gyoun Kim, Kibum Kang   +22 more
wiley   +1 more source

Comparative analysis of the process of formation of fractal metal films: atomistic simulation

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов
In this paper, molecular dynamics method and the tight-binding potential were used to simulate a molecular beam epitaxy process for the formation of fractal metal films of copper subgroup elements (Ag, Au, Cu) on a solid surface of a more refractory ...
V.A. Anofriev, A.S. Antonov, S.A. Vasilyev, N.B. Kuz’min, N.Yu.. Sdobnyakov   +4 more
doaj   +1 more source

Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures

Nature Communications, 2016
Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang, Yuxuan Chen, Chendong Zhang, Chi-Ruei Pan, Mei-Yin Chou, Changgan Zeng, Chih-Kang Shih   +6 more
doaj   +1 more source

Topological Materials and Related Applications

Advanced Electronic Materials, EarlyView.
This review covers topological materials—including topological insulators, quantum valley Hall and quantum spin Hall insulators, and topological Weyl and Dirac semimetals—as well as their most recent advancements in fields such as spintronics, electronics, photonics, thermoelectrics, and catalysis.
Carlo Grazianetti, Roberto Mantovan, Emanuele Longo, Harold J. W. Zandvliet, Pantelis Bampoulis, Yu Pan, Fan Li, Xia Wang, Payton Downey, Alessandro Molle   +9 more
wiley   +1 more source

Ferroelectric Behavior of Micro‐ to Submicron‐Scale HZO Capacitors: Impact of the Perimeter‐to‐Area Ratio

Advanced Electronic Materials, EarlyView.
Using C‐AFM, W/HZO/p‐Ge capacitors with areas down to 0.26 µm2 are investigated. Frequency‐dependent voltage ramps reveal switching currents that confirm complete polarization reversal across the entire electrode area, while PUND enables reconstruction of P–V loops.
Lucian Trupina, Stefan Neatu, Lucian Pintilie, Lucia Nicoleta Leonat, Stavros Kitsios, Stefania Skorda, Alexandros El Sachat, Polychronis Tsipas, Alexander Flasby, Laura Bégon‐Lours, Athanasios Dimoulas   +10 more
wiley   +1 more source

Molecular beam epitaxy growth of superconducting Sr2RuO4 films

APL Materials, 2017
We report the growth of superconducting Sr2RuO4 films by oxide molecular beam epitaxy (MBE). Careful tuning of the Ru flux with an electron beam evaporator enables us to optimize growth conditions including the Ru/Sr flux ratio and also to investigate ...
M. Uchida, M. Ide, H. Watanabe, K. S. Takahashi, Y. Tokura, M. Kawasaki   +5 more
doaj   +1 more source

Detection of IR and sub/THz radiation using MCT thin layer structures: design of the chip, optical elements and antenna pattern

Semiconductor Physics, Quantum Electronics & Optoelectronics, 2016
Two-color un-cooled narrow-gap MCT (mercury-cadmium-telluride) semiconductor thin layers, grown by liquid phase epitaxy or molecular beam epitaxy methods on high resistivity CdZnTe or GaAs substrates, with bow-type antennas were considered both as sub ...
F.F. Sizov
doaj   +1 more source

Extrinsic and Intrinsic Charge Transfer at Interfaces of Membrane‐Based Oxide Heterostructures

Advanced Electronic Materials, EarlyView.
Freestanding oxides have emerged as a new opportunity to tailor oxides outside of the typical epitaxial constraints. We present the fabrication of TiO2‐terminated SrTiO3 membranes via direct growth control. We demonstrate competing ionic and electronic charge transfer in LaAlO3/SrTiO3 bilayers using near ambient pressure XPS.
Kapil Nayak, Marcus A. Wohlgemuth, Anton Kaus, Lisa Heymann, Alexandros Sarantopoulos, Lee‐Kang Huang, Christoph Baeumer, Regina Dittmann, Felix Gunkel   +8 more
wiley   +1 more source

Eigenschaften von pseudomorphen InxGa1-xAs/Al0.3Ga0.7As/GaAs HEMT Strukturen - 0 kleiner als x kleiner als 0.5

, 2022
3 S. : Abb.,Lit.Modulation doped Al sub 0.3 Ga sub 0.7 As/In sub x Ga sub 1-x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy.
Schweizer, T., Ganser, P., Hülsmann, A., Tasker, P., Köhler, Klaus   +4 more
core  

Emergent Spin Hall Quantization and High‐Order van Hove singularities in Square‐Octagonal MA2Z4

Advanced Physics Research, EarlyView.
Square‐octagonal MA2Z4 (M = Mo/W, A = Si/Ge, Z = pnictogen) monolayers are predicted to realize quantum spin Hall insulators with nearly quantized spin Hall conductivity enabled by an emergent spin U(1) quasi‐symmetry. Materials with Z = As and Sb host quasi‐flat bands with high‐order van Hove singularities near the Fermi level, making them promising ...
Rahul Verma, Yash Vardhan, Hsin Lin, Bahadur Singh   +3 more
wiley   +1 more source