Results 61 to 70 of about 3,923,319 (288)
Chiral Phonon–Driven Ultrafast Spin Currents in a Non‐Magnetic Ferroelectric
Broadband terahertz emission spectroscopy shows signatures of ultrafast spin‐current generation in non‐magnetic ferroelectric β$\beta$’‐In2Se3${\rm In}_2{\rm Se}_3$. Reversal of the emitted field upon sample inversion and substitution of Pt with W indicates spin‐Hall‐mediated charge conversion, while polarization‐resolved measurements reveal ...
Thomas B. Gill +16 more
wiley +1 more source
Epitaxial integration and properties of SrRuO3 on silicon
We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer.
Zhe Wang +10 more
doaj +1 more source
Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
Growth of Low-Density Vertical Quantum Dot Molecules with Control in Energy Emission
In this work, we present results on the formation of vertical molecule structures formed by two vertically aligned InAs quantum dots (QD) in which a deliberate control of energy emission is achieved.
Fuster D +8 more
doaj +1 more source
Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Comparative analysis of the process of formation of fractal metal films: atomistic simulation
In this paper, molecular dynamics method and the tight-binding potential were used to simulate a molecular beam epitaxy process for the formation of fractal metal films of copper subgroup elements (Ag, Au, Cu) on a solid surface of a more refractory ...
V.A. Anofriev +4 more
doaj +1 more source
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang +6 more
doaj +1 more source
Molecular beam epitaxial growth of Bi2Se3 nanowires and nanoflakes [PDF]
Topological Insulators are in focus of immense research efforts and rapid scientific progress is obtained in that field. Bi2Se3 has proven to be a topological insulator material that provides a large band gap and a band structure with a single Dirac cone
G. M. Knebl +7 more
core +1 more source
The symmetry‐driven coexistence of altermagnetism and (anti)ferroelectricity in perovskites shows a strong dimensional dependence. Upon reducing the system from bulk to the two‐dimensional limit, only C‐type antiferromagnetic order retains ferroelectrically switchable altermagnetism, whereas A‐ and G‐type orders become conventional antiferromagnets ...
Zhou Cui +6 more
wiley +1 more source
3 S. : Abb.,Lit.Modulation doped Al sub 0.3 Ga sub 0.7 As/In sub x Ga sub 1-x As/GaAs high electron mobility transistor structures for device application have been grown using molecular beam epitaxy.
Schweizer, T. +4 more
core +1 more source

