Results 61 to 70 of about 82,642 (308)
Inhomogeneous low temperature epitaxial breakdown during Si overgrowth of GeSi quantum dots
, 2011 Low temperature epitaxial breakdown of inhomogeneously strained Si capping layers is investigated. By growing Si films on coherently strained GeSi quantum dot surfaces, we differentiate effects of surface roughness, strain, and growth orientation on the ...
Floro, Jerrold A., Petz, Christopher W.
core +1 more source
Polarization fields in GaN/AlN nanowire heterostructures studied by Off axis holography [PDF]
, 2013 In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential profiles ...
Hertog, Martien Den +2 more
core +5 more sources
Advanced Optical Materials, EarlyView.Structural color generation is an emerging field for digital display and printing applications. This report presents a novel truncated‐cone design and the first use of GaP sandwiched between two layers of TiO2, demonstrating ultra‐bright, tunable colors with a record color gamut.
Md Rumon Miah +2 more
wiley +1 more source
Advanced Photonics Research, Volume 6, Issue 5, May 2025.Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
Epitaxial integration and properties of SrRuO3 on silicon
APL Materials, 2018 We report the integration of SrRuO3, one of the most widely used oxide electrode materials in functional oxide heterostructures, with silicon using molecular-beam epitaxy and an SrTiO3 buffer layer.
Zhe Wang +10 more
doaj +1 more source
Advances in ultrashallow doping of silicon
Advances in Physics: X, 2021 Ultrashallow doping is required for both classical field-effect transistors in integrated circuits and revolutionary quantum devices in quantum computing.
Chufan Zhang, Shannan Chang, Yaping Dan
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Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Bandgap renormalization and work function tuning in MoSe2/hBN/Ru(0001) heterostructures
Nature Communications, 2016 Direct epitaxial growth of vertically stacked layered materials is a promising route towards scalable fabrication of van der Waals heterostructures. Here, the authors demonstrate molecular beam epitaxy of semiconducting MoSe2on a hBN/Ru(0001) substrate.
Qiang Zhang +6 more
doaj +1 more source
Semi-metallic SrIrO3 films using solid-source metal-organic molecular beam epitaxy
APL Materials, 2022 Perovskite SrIrO3 films and its heterostructures are very promising, yet less researched, avenues to explore interesting physics originating from the interplay between strong spin–orbit coupling and electron correlations.
Rashmi Choudhary +4 more
doaj +1 more source
Molecular beam epitaxy of InAs nanowires in SiO2 nanotube templates: challenges and prospects for integration of III-Vs on Si [PDF]
, 2016 Guided growth of semiconductor nanowires in nanotube templates has been considered as a potential platform for reproducible integration of III-Vs on silicon or other mismatched substrates.
Dubrovskii, Vladimir G. +8 more
core +2 more sources