Results 1 to 10 of about 1,437 (120)
The electrical properties of InN give it potential for applications in III-nitride electronic devices, and the use of lower-dimensional epitaxial structures could mitigate issues with the high lattice mismatch of InN to GaN (10%). N-polar MOCVD growth of
Vineeta R. Muthuraj +7 more
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Phase Composition and Thermoelectric Properties of Epitaxial CrMoVN Thin Films
Thin films of CrMoVN are deposited on c‐plane sapphire (Al2O3 (0001)) by direct current reactive magnetron sputtering, to investigate the effects of Mo and V addition to CrN‐based films.
Victor Hjort +5 more
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Novel Nitride Materials Synthesized at High Pressure
Nitride materials including conventional manmade superhard light-element nitrides, such as cubic boron nitride (cBN), cubic silicon nitride (γ-Si3N4), and carbonitrides, have been extensively used for machining (e.g., turning, cutting, grinding, boring ...
Pei Wang +6 more
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(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission
Aluminium Gallium Nitride (AlyGa1-yN) quantum dots (QDs) with thin sub-µm AlxGa1-xN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates.
Aly Zaiter +7 more
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Pressure Influence on the Stability and Formation of γ - Fe4N when Transformed into Fe4O [PDF]
The improved technology has allowed the study of electronic structure of solids with a complex crystalline structure and containing various atoms, different in the unit cell, and thus we can calculate the energy of formation and obtaining the bulk ...
A. V. dos Santos +2 more
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A large volume of research on lithium–oxygen (Li–O2) batteries (LOBs) has been conducted in the recent decades, inspired by their high energy density and power density.
K. Karuppasamy +6 more
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Precipitation of different types of chromium nitrides may occur during processing of super duplex stainless steels, affecting the properties of the material. In this study the influence of quenched-in (size range ca. 50-100 nm) and isothermal (size range
Eleonora Bettini +3 more
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GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji +4 more
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Modification of cast alloys nanostructured material
The third article of the series devoted to the application of nanomaterials and nanotechnologies in industry in general and, first of all, in metallurgy, materials science and foundry is presented. This article deals with the use of nanomaterials for the
P. A. Vitiaz +4 more
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Room Temperature Ferromagnetism in InGaN Nanostructures Induced by Cr+ ion Implantation
This paper presents the magnetic properties of chrome ion (Cr+) implanted InxGa1−xN (x = 0.1, 0.3, 0.5 and 1.0) nanostructures grown by molecular beam epitaxy (MBE). The Cr+ implantation was conducted at 110 keV with three doses, namely 2.6 × 1015, 5.3 ×
Zheng Wang, Hao Wu, Yong Liu, Chang Liu
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