Results 11 to 20 of about 259,483 (342)

(Al, Ga)N-Based Quantum Dots Heterostructures on h-BN for UV-C Emission

open access: yesNanomaterials, 2023
Aluminium Gallium Nitride (AlyGa1-yN) quantum dots (QDs) with thin sub-µm AlxGa1-xN layers (with x > y) were grown by molecular beam epitaxy on 3 nm and 6 nm thick hexagonal boron nitride (h-BN) initially deposited on c-sapphire substrates.
Aly Zaiter   +7 more
doaj   +1 more source

Organocatalysis with carbon nitrides

open access: yesScience and Technology of Advanced Materials, 2023
Carbon nitrides, a distinguished class of metal-free catalytic materials, have presented a good potential for chemical transformations and are expected to become prominent materials for organocatalysis.
S. M. Ruban   +8 more
semanticscholar   +1 more source

Pressure Influence on the Stability and Formation of γ - Fe4N when Transformed into Fe4O [PDF]

open access: yesMaterials Research, 2013
The improved technology has allowed the study of electronic structure of solids with a complex crystalline structure and containing various atoms, different in the unit cell, and thus we can calculate the energy of formation and obtaining the bulk ...
A. V. dos Santos   +2 more
doaj   +1 more source

Two‐Dimensional Transition Metal Carbides and Nitrides (MXenes): Synthesis, Properties, and Electrochemical Energy Storage Applications

open access: yesEnergy & Environmental Materials, 2020
A family of 2D transition metal carbides and nitrides known as MXenes has received increasing attention since the discovery of Ti3C2 in 2011. To date, about 30 different MXenes with well‐defined structures and properties have been synthesized, and many ...
C. Zhang   +8 more
semanticscholar   +1 more source

All nitride asymmetric supercapacitors of niobium titanium nitride-vanadium nitride

open access: yesJournal of Power Sources, 2021
Abstract Metal nitrides are potential electrode materials for supercapacitors because of their high conductivity, high capacitance and good corrosion resistance. Herein, we present a general strategy to prepare self-standing bimetallic nitride thin film nanostructures using magnetron co-sputtering and further to boost their electrochemical ...
Wei, Binbin   +5 more
openaire   +2 more sources

Comparative Simulations of Conductive Nitrides as Alternative Plasmonic Nanostructures for Solar Cells

open access: yesEnergies, 2021
Particle layers employing conductive transition metal nitrides have been proposed as possible alternative plasmonic materials for photovoltaic applications due to their reduced losses compared to metal nanostructures.
Christin David   +2 more
doaj   +1 more source

Spontaneous polarization and piezoelectric constants of III-V nitrides [PDF]

open access: yes, 1997
The spontaneous polarization, dynamical Born charges, and piezoelectric constants of the III-V nitrides AlN, GaN, and InN are studied ab initio using the Berry-phase approach to polarization in solids.
F. Bernardini   +2 more
semanticscholar   +1 more source

Recent Advances in Nanostructured Transition Metal Carbide- and Nitride-Based Cathode Electrocatalysts for Li–O2 Batteries (LOBs): A Brief Review

open access: yesNanomaterials, 2020
A large volume of research on lithium–oxygen (Li–O2) batteries (LOBs) has been conducted in the recent decades, inspired by their high energy density and power density.
K. Karuppasamy   +6 more
doaj   +1 more source

Study of Corrosion Behavior of a 2507 Super Duplex Stainless Steel: Influence of Quenched-in and Isothermal Nitrides

open access: yesInternational Journal of Electrochemical Science, 2014
Precipitation of different types of chromium nitrides may occur during processing of super duplex stainless steels, affecting the properties of the material. In this study the influence of quenched-in (size range ca. 50-100 nm) and isothermal (size range
Eleonora Bettini   +3 more
doaj   +1 more source

In-Situ Preparation of GaN Sacrificial Layers on Sapphire Substrate in MOVPE Reactor for Self-Separation of the Overgrown GaN Crystal

open access: yesCrystals, 2020
GaN layers on sapphire substrates were prepared by using metal organic vapor phase epitaxy (MOVPE) combined with an in-situ H2 etching process for the purpose of later self-separation of thick GaN crystals produced by hydride vapor phase epitaxy (HVPE ...
Sepideh Faraji   +4 more
doaj   +1 more source

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