Results 31 to 40 of about 62,943 (302)

Growth of crystalline phase change materials by physical deposition methods

open access: yesAdvances in Physics: X, 2017
Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging.
Jos E. Boschker, Raffaella Calarco
doaj   +1 more source

Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

open access: yes, 2018
Molecular beam epitaxy of dilute nitride materials has progressed a long way toward claiming its unique place as a technology that enables the development of new types of optoelectronics devices.
Shu M. Wang   +5 more
core   +1 more source

Architecture‐Driven Functional Coupling in Vertically Aligned Nanocomposites

open access: yesAdvanced Functional Materials, EarlyView.
Vertically aligned nanocomposites define a growth‐engineered architecture in which vertical interfaces, strain fields, defect pathways, and phase connectivity are created simultaneously. This review shows how these architectural features couple ferroic, optical, ionic, electrochemical, and device responses, establishing design rules and open challenges
Md Shatil Islam‐Shanto   +4 more
wiley   +1 more source

Sub‐1 ms Optoelectronic Synapse Based on {ZnCdO/ZnO} Multilayer Structure for High‐Speed Neuromorphic Vision Systems

open access: yesAdvanced Functional Materials, EarlyView.
Eu‐doped {ZnCdO/ZnO} structures grown on Si are developed, showcasing dual‐functionality controlled by europium doping. While high europium concentration transforms the device into an ultrafast, self‐powered photodetector, low‐doped structures can be used as an optoelectronic synapse.
Igor Perlikowski   +3 more
wiley   +1 more source

TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

open access: yesКонденсированные среды и межфазные границы, 2021
A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones ...
Andrey R. Kaul   +3 more
doaj   +1 more source

Nitride MXenes Beyond Carbides: Bridging the Gap Between Computational Prediction and Experimental Realization

open access: yesAdvanced Functional Materials, EarlyView.
Nitride MXenes remain constrained by a persistent gap between computational prediction and experimental realization. This Review identifies the thermodynamic, kinetic, and chemical barriers limiting their synthesis, critically evaluates emerging fabrication routes, and proposes a multidimensional computational‐experimental framework to accelerate the ...
Naresh Varnakavi, Masoud Soroush
wiley   +1 more source

Liquid Phase Epitaxy of SiC

open access: yes, 2007
  Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by ...
Yakimova, Rositsa,, Syväjärvi, Mikael,
core   +1 more source

A New Strategy for Creating Quantum Light Emitters Via Post‐Growth Hydrogen‐Ion Irradiation of III‐V Nanowires

open access: yesAdvanced Functional Materials, EarlyView.
A post‐growth method is demonstrated to realize energy‐tunable quantum emitters in GaAs/GaAsN/GaAs core–multishell nanowires on a Si substrate. By combining the N‐induced bandgap reduction with H‐ion irradiation, the GaAsN potential landscape is engineered, enabling isolated, narrow emission lines that function as single‐photon sources with g(2)(0) ∼ 0.
Akant Sagar Sharma   +10 more
wiley   +1 more source

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

open access: yes, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter   +6 more
core   +1 more source

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

open access: yes, 2023
Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal ...
Yang Shenyuan   +7 more
core   +2 more sources

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