Results 31 to 40 of about 53,075 (307)

Uranium Doped Gallium Nitride Epitaxial Thin Films

Advanced Electronic Materials
Gallium nitride (GaN) is near ubiquitous in modern day technologies, forming the backbone of solid‐state lighting and high‐power electronics. Engineering the physical properties of GaN has been investigated to some degree by the incorporation or doping ...
J. Pierce Fix, Sabin Regmi, Aaron G. Penders, Sohail Shah, Kevin D. Vallejo, Volodymyr B. Buturlim, Belief Rifore, Krzysztof Gofryk, Mukesh Bachhav, Nicholas J. Borys, Brelon J. May   +10 more
doaj   +2 more sources

Effect of annealing temperature on the morphology, structure, and optical properties of nanostructured SnO(x) films

Materials Research Express, 2020
Nanostructured SnO(x) films were obtained by molecular beam epitaxy (MBE). The morphology, structure, and optical properties of obtained films annealed in the temperature range of 200 °C–1000 °C were studied.
Vyacheslav A Timofeev, Vladimir I Mashanov, Alexandr I Nikiforov, Ivan A Azarov, Ivan D Loshkarev, Ilya V Korolkov, Tatyana A Gavrilova, M Yu Yesin, Igor A Chetyrin   +8 more
doaj   +1 more source

XRD and photoluminescence measurements of GaN grown on dome shaped patterned sapphire with different NH3 flow rates

Cumhuriyet Science Journal, 2021
The aim of the study is to understand the effects of NH3 flow rate in the initial part of high temperature (HT) GaN growth on structural and optical characteristics of the HT-GaN layer grown on dome shaped sapphire susbtrate by Metal Organic Chemical ...
İsmail Altuntas
doaj   +1 more source

Complex Nanostructures by Pulsed Droplet Epitaxy

, 2011
What makes three dimensional semiconductor quantum nanostructures so attractive is the possibility to tune their electronic properties by careful design of their size and composition.
Bietti, Sergio, Sanguinetti, Stefano, Claudio Somaschini, Koguchi, Noboyuki, Somaschini, Claudio, Sergio Bietti, Stefano Sanguinetti, Noboyuki Koguchi   +7 more
core   +1 more source

Nature of the Pits on the Lattice-Matched InAlAs Layer Surface Grown on the (001) InP Substrate

Nanomaterials
The structural properties of lattice-matched InAlAs/InP layers grown by molecular beam epitaxy have been studied using atomic force microscopy, scanning electron microscopy and micro-photoluminescence spectroscopy.
Dmitrii V. Gulyaev, Demid S. Abramkin, Dmitriy V. Dmitriev, Alexander I. Toropov, Eugeniy A. Kolosovsky, Sergey A. Ponomarev, Nina N. Kurus, Ilya A. Milekhin, Konstantin S. Zhuravlev   +8 more
doaj   +1 more source

Molecular Beam Epitaxy of Dilute Nitride Optoelectronic Devices

, 2018
Molecular beam epitaxy of dilute nitride materials has progressed a long way toward claiming its unique place as a technology that enables the development of new types of optoelectronics devices.
Shu M. Wang, Wang, Shumin,, Mircea Guina, Arto Aho, Guina, M.,, Aho, Arto,   +5 more
core   +1 more source

Workflow for Design of Experiments‐Based Modeling of Species Transport and Growth Kinetics in GaN Hydride Vapor Phase Epitaxy

Advanced Engineering Materials, EarlyView.
A novel workflow for investigating hydride vapor phase epitaxy for GaN bulk crystal growth is proposed. It combines Design of experiments (DoE) with physical simulations of mass transport and crystal growth kinetics, serving as an intermediate step between DoE and experiments.
J. Tomkovič, G. Lukin, H. Torkashvand, A. Kerschbaum, M. Müller, S. Besendörfer, J. Heitmann, J. Friedrich   +7 more
wiley   +1 more source

Liquid Phase Epitaxy of SiC

, 2007
  Liquid-Phase Epitaxy (LPE) is a technique used in the bulk growth of crystals, typically in semiconductor manufacturing, whereby the crystal is grown from a rich solution of the semiconductor onto a substrate in layers, each of which is formed by ...
Yakimova, Rositsa,, Syväjärvi, Mikael,
core   +1 more source

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Growth of crystalline phase change materials by physical deposition methods

Advances in Physics: X, 2017
Phase change materials are a technologically important materials class and are used for data storage in rewritable DVDs and in phase change random access memory. Furthermore, new applications for phase change materials are emerging.
Jos E. Boschker, Raffaella Calarco
doaj   +1 more source