Results 41 to 50 of about 53,075 (307)

Epitaxy on polycrystalline substrates [PDF]

Science, 2017
The growth of new oxide phases is explored with multiple surface ...
Pandya, Shishir, Martin, Lane W
openaire   +4 more sources

Massive Dirac fermion observed in lanthanide-doped topological insulator thin films

, 2015
This publication arises from research funded by the John Fell Oxford University Press (OUP) Research Fund, a DARPA MESO Project (No. N66001-11-1-4105), and funding from the European Union Seventh Framework Programme under Grant Agreement 312483 – ESTEEM2
Srot, V, Van Aken, P. A., Collins-McIntyre, LJ, Chen, YL, Harrison, SE, Collins-McIntyre, Liam James, Kellock, A., Parkin, S.S.P., Chen, Schönherr, P, Vailionis, A., Chen, Y. L., Schönherr, Piet, Hesjedal, Thorsten, Pushp, A, Pushp, A., Harris, J.S., Srot, V., Hesjedal, T., Zhou, B, Collins-McIntyre, L., Parkin, S. S P, van Aken, P.A., Harris, J. S., Kellock, A.J., Harris, J., Kellock, AJ, van Aken, P., Hesjedal, T, Parkin, S., Parkin, SSP, Harrison, S., Collins-McIntyre, Liam J., Zhou, B., Harrison, S. E., Harris, JS, Kellock, A. J., Schönherr, P., van Aken, PA, Vailionis, A, Harrison, S.E.   +40 more
core   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

TSF-MOCVD – a novel technique for chemical vapour deposition on oxide thin films and layered heterostructures

Конденсированные среды и межфазные границы, 2021
A new principle for supplying volatile precursors to MOCVD gas-phase chemical deposition systems is proposed, based on a two-stage evaporation of an organic solution of precursors from a soaked cotton thread, which passes sequentially through the zones ...
Andrey R. Kaul, Roy R. Nygaard, Vadim Yu. Ratovskiy, Alexander L. Vasiliev   +3 more
doaj   +1 more source

Glissile Interphase Boundaries Enable Collective Phase Switching in Epitaxial Polar Oxides

Advanced Functional Materials, EarlyView.
A triple point is identified in the phase diagram of low‐symmetry epitaxial BiFeO3 thin film along with an extended regime of phase competition associated with a flattened energy landscape. The electromechanical response is shown to be governed by correlated interphase‐boundary motion, including scale‐free avalanche dynamics characteristic of systems ...
Mohammad Moein Seyfouri, Oliver Paull, Ralph Bulanadi, Yasuhiro Sakamoto, Shintaro Yasui, Mikayla Lord, Mahak Chhabra, David Walker, Patrycja Paruch, Shery Chang, Nagarajan Valanoor, Daniel Sando   +11 more
wiley   +1 more source

Two-dimensional material-assisted remote epitaxy and van der Waals epitaxy: a review

, 2023
Heteroepitaxy can reduce the cost and widen the application range of semiconductor film synthesis and device fabrication. However, the lattice and thermal expansion coefficient mismatches between epilayers and substrates limit the improvement of crystal ...
Peng Gao, Tongbo Wei, Zhongfan Liu, Bingyao Liu, Shenyuan Yang, Zhaolong Chen, Zhiqiang Liu, Zhetong Liu   +7 more
core   +2 more sources

Solution‐Processed Thin‐Film Transistors With Tunable Temporal Dynamics for Neuromorphic Computing

Advanced Functional Materials, EarlyView.
Solution‐processed CNT and CNT/P3HT ion‐gated transistors exhibit materials‐defined synaptic timescales: fast CNT devices for high‐frequency spiking and slow hybrid devices for temporal integration. Embedding these dynamics into coupled reservoir‐computing and spiking neural network simulations reveals that a Hybrid‐Reservoir / CNT‐SNN architecture ...
Kevin Schnittker, Haoyi Lin, Zahra Bahrami, Strahinja Marinkovic, Sung Hyun Lee, Joseph Andrews   +5 more
wiley   +1 more source

Bandgap‐Engineered AlGaAs/GaAs Heterostructures for Wavelength‐Selective Dual‐Polarity Photoelectrochemistry

Advanced Functional Materials, EarlyView.
Bandgap‐engineered AlGaAs/GaAs heterostructures exhibit wavelength‐selective dual‐polarity photoelectrochemistry, switching from photocathodic to photoanodic response depending on excitation wavelength. The polarity transition is governed by band‐selective absorption, built‐in electric‐field‐driven carrier transport, and interfacial charge‐transfer ...
Yukai Mao, Lipin Chen, Jules Courtin, Siyu Lin, Gangri Cai, Yan Zhu, Yoan Léger, Nicolas Bertru, Jinshi Zhao, Charles Cornet   +9 more
wiley   +1 more source

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity

Scientific Reports
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips, Alistair J. Brash, Max Godsland, Nicholas J. Martin, Andrew Foster, Anna Tomlinson, René Dost, Nasser Babazadeh, Elisa M. Sala, Luke Wilson, Jon Heffernan, Maurice S. Skolnick, A. Mark Fox   +12 more
doaj   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Micromachines
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum
An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo   +3 more
doaj   +1 more source