Results 41 to 50 of about 62,943 (302)

Purcell-enhanced single photons at telecom wavelengths from a quantum dot in a photonic crystal cavity

Scientific Reports
Quantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips, Alistair J. Brash, Max Godsland, Nicholas J. Martin, Andrew Foster, Anna Tomlinson, René Dost, Nasser Babazadeh, Elisa M. Sala, Luke Wilson, Jon Heffernan, Maurice S. Skolnick, A. Mark Fox   +12 more
doaj   +1 more source

Improvement Performance of p-GaN Gate High-Electron-Mobility Transistors with GaN/AlN/AlGaN Barrier Structure

Micromachines
This study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum
An-Chen Liu, Yu-Wen Huang, Hsin-Chu Chen, Hao-Chung Kuo   +3 more
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Optimization of the concentration's distribution of the carriers on thickness of epitaxial layers [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2007
A plunger device for liquid epitaxy of АIIIВV semiconductor compositions has been modified. It has been shown that the impurity concentration gradient, creating inner electrical fields in the photodetecting and active regions of semiconductor structures,
Karimov A. V., Yodgorova D. M., Giyasova F. A., Saidova R. A., Haydarov Sh. A.   +4 more
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Ligand Assisted Epitaxial Growth of CsPbBr3 Microcrystal Resonators With Record ‐Low Lasing Thresholds

Advanced Functional Materials, EarlyView.
Solution‐based ligand‐assisted epitaxial growth (LAEG) yields high‐quality CsPbBr3 microcrystals on different substrates with superior morphology, passivated surfaces, and high photoluminescence quantum yield. These robust micro‐resonators achieve record‐low room‐temperature lasing thresholds of 7.2 kW·cm−2 and maintain operational stability up to 90 ...
Shuyu Zhou, Viktor Rehm, Zijian Peng, Tomáš Hrbek, Anastasia Barabash, Christoph J. Brabec, Berke Özyalin, Yufei Han, Johannes Böhmer, Johannes Will, Erdmann Spiecker, Klaus Götz, Tobias Unruh, Jędrzej Korczak, Tomasz Story, Felix Hilpert, Olaf Brummel, Jörg Libuda, Iva Matolínová, Wolfgang Heiss   +19 more
wiley   +1 more source

Effect of epitaxy on interband transitions in ferroelectric KNbO3

New Journal of Physics, 2015
Very large lattice strain and strain-induced polarization are achieved in KNbO _3 using epitaxial growth of a thin KNbO _3 film onto a (001)-oriented SrTiO _3 single-crystal substrate.
M Tyunina, L D Yao, D Chvostova, T Kocourek, M Jelinek, A Dejneka, S van Dijken   +6 more
doaj   +1 more source

Unexpected Asymmetric Mn‐Sb Site Mixing and Reentrant Spin‐Glass State of MnSb2Te4

Advanced Functional Materials, EarlyView.
MnSb2Te4 is an intrinsic magnetic topological insulator. Its properties are extraordinarily sensitive to tiny defects, making structural studies essential for understanding how magnetism and topology work together. This work shows that Mn can be unevenly distributed within the crystal and how that disorder is linked to a newly reported spin‐glass state
Gustavo Chavez Ponce de Leon, Ahmad Dibajeh, Gert ten Brink, Majid Ahmadi, Suyang Sun, Wei Zhang, Bart Jan Kooi, George Palasantzas   +7 more
wiley   +1 more source

Caracterização ótica e estrutural de nanofios de GaAs dopados com Mg [PDF]

, 2011
Mestrado em Engenharia FísicaNo presente trabalho realizámos um estudo para avaliar a influência da concentração de Mg nas propriedades óticas e estruturais de nanofios de GaAs crescidos em substratos de Si(111) por epitaxia de feixes moleculares ...
Falcão, Bruno Teixeira de Poças
core  

Proximity‐Tuned Magnetic and Transport Anomalies in All‐Epitaxial Fe5−xGeTe2/WSe2 Van der Waals Heterostructures

Advanced Functional Materials, EarlyView.
All‐epitaxial and scalable ferromagnetic/non‐magnetic Fe5−xGeTe2/WSe2 van der Waals (vdW) heterostructures exhibiting room‐temperature magnetism and perpendicular magnetic anisotropy (PMA) are realized. The system displays proximity‐tuned magnetic anisotropy, thickness‐dependent unconventional Hall effects, and temperature‐dependent sign reversal of ...
Hua Lv, Tauqir Shinwari, Kacho Imtiyaz Ali Khan, Jens Herfort, Chen Chen, Joan M. Redwing, Mehak Loyal, Gerhard Jakob, Mathias Kläui, Achim Trampert, Bernat Mundet, Belén Ballesteros, Manfred Ramsteiner, Roman Engel‐Herbert, Michael Hanke, João Marcelo J. Lopes   +15 more
wiley   +1 more source

Universal Conductance Fluctuations in Quantum Anomalous Hall Insulators

Advanced Materials, EarlyView.
Universal conductance fluctuations are observed in mesoscopic quantum anomalous Hall insulators. Two distinct fluctuation patterns are identified, arising from different interference processes of bulk and chiral edge states, respectively. These findings unveil rich quantum interference phenomena in quantum anomalous Hall insulators and provide insights
Peng Deng, Peng Zhang, Gang Qiu, Ting‐Hsun Yang, Chang Niu, Yaochen Li, Wenqiang Cui, Yang Feng, Peide D. Ye, Ke He, Kai Chang, Kang L. Wang   +11 more
wiley   +1 more source

MOLECULAR-DYNAMICS SIMULATION OF EPITAXIAL GROWTH OF NANOSIZED LEAD HETEROSTRUCTURES ON NICKEL [PDF]

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2012
Epitaxial growth of nanosized Pb heterostructures (islands) on faces (100) and (111) of Ni was simulated using the isotheral molecular dynamics. Specific features were revealed of the epitaxy in metallic systems in comparison with Lennard-Jones systems ...
A.G. Bembel, S.A. Vasilyev, V.M. Samsonov   +2 more
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