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Epitaxy on polycrystalline substrates [PDF]
Science, 2017 The growth of new oxide phases is explored with multiple surface ...
Pandya, Shishir, Martin, Lane W
openaire +4 more sources
MOFs and COFs in Electronics: Bridging the Gap between Intrinsic Properties and Measured Performance
Advanced Functional Materials, EarlyView.Metal‐organic frameworks (MOFs) and covalent organic frameworks (COFs) hold promise for advanced electronics. However, discrepancies in reported electrical conductivities highlight the importance of measurement methodologies. This review explores intrinsic charge transport mechanisms and extrinsic factors influencing performance, and critically ...
Jonas F. Pöhls, R. Thomas Weitz
wiley +1 more source
, 2004 Si1-xGex/Si1-yGey/Si(100) heterostructures grown by Molecular Beam Epitaxy (MBE) were used in order to study B surface segregation during growth and B lattice diffusion. Ge concentration and stress effects were separated. Analysis of B segregation during
A. Portavoce +11 more
core +6 more sources
Position controlled self-catalyzed growth of GaAs nanowires by molecular beam epitaxy [PDF]
, 2010 GaAs nanowires are grown by molecular beam epitaxy using a self-catalyzed, Ga-assisted growth technique. Position control is achieved by nano-patterning a SiO2 layer with arrays of holes with a hole diameter of 85 nm and a hole pitch varying between 200 ...
Andreas Rudolph +10 more
core +3 more sources
Advanced Functional Materials, EarlyView.Polymorph engineering in ErMnO3 enables low‐voltage, forming‐free threshold switching with tunable negative differential resistance. Conducting orthorhombic regions embedded in an insulating hexagonal matrix provide controlled Joule‐heating‐enhanced Poole–Frenkel transport. The hexagonal phase prevents excessive heating and breakdown.
Rong Wu +8 more
wiley +1 more source
Scientific ReportsQuantum dots are promising candidates for telecom single photon sources due to their tunable emission across the different low-loss telecommunications bands, making them compatible with existing fiber networks.
Catherine L. Phillips +12 more
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MicromachinesThis study demonstrates a particular composited barrier structure of high-electron-mobility transistors (HEMTs) with an enhancement mode composed of p-GaN/GaN/AlN/AlGaN/GaN. The purpose of the composite barrier structure device is to increase the maximum
An-Chen Liu +3 more
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Optimization of the concentration's distribution of the carriers on thickness of epitaxial layers [PDF]
Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2007 A plunger device for liquid epitaxy of АIIIВV semiconductor compositions has been modified. It has been shown that the impurity concentration gradient, creating inner electrical fields in the photodetecting and active regions of semiconductor structures,
Karimov A. V. +4 more
doaj
2D Magnetic and Topological Quantum Materials and Devices for Ultralow Power Spintronics
Advanced Functional Materials, EarlyView.2D magnets and topological quantum materials enable ultralow‐power spintronics by combining robust magnetic order with symmetry‐protected, Berry‐curvature‐driven transport. Fundamentals of 2D anisotropy and spin‐orbit‐coupling induced band inversion are linked to scalable growth and vdW stacking.
Brahmdutta Dixit +5 more
wiley +1 more source
Effect of epitaxy on interband transitions in ferroelectric KNbO3
New Journal of Physics, 2015 Very large lattice strain and strain-induced polarization are achieved in KNbO _3 using epitaxial growth of a thin KNbO _3 film onto a (001)-oriented SrTiO _3 single-crystal substrate.
M Tyunina +6 more
doaj +1 more source