Results 61 to 70 of about 11,104 (255)

Anomalous Crystallinity and Magnetism in Chemically Disordered Coherent Heterostructures

Advanced Materials, EarlyView.
Coherent isostructural high‐entropy oxide heterostructures are realized despite remarkable >5% interfacial lattice distortion. The resulting buried interface exhibits abrupt valence reconstruction which contributes to 2 × enhanced exchange bias in the heterostructure relative to constituent layers, demonstrating how chemical disorder enabled anomalous ...
Saeed S. I. Almishal, Sai Venkata Gayathri Ayyagari, Aaron Pearre, Pat Kezer, Matthew Furst, Christina M. Rost, Binghai Yan, Nasim Alem, Timothy Charlton, Zhiqiang Mao, John T. Heron, Jon‐Paul Maria   +11 more
wiley   +1 more source

Above Room Temperature Ferroelectricity in Epitaxially Strained KTaO3

Advanced Materials, EarlyView.
Through precise epitaxial engineering, the cubic and paraelectric KTaO3${\rm KTaO}_3$ is transformed into a robust ferroelectric. By leveraging lattice‐mismatched substrates to apply controlled epitaxial strain, a stable ferroelectric ground‐state is achieved with a transition temperature as high as 475 K, establishing KTaO3${\rm KTaO}_3$ as a highly ...
Tobias Schwaigert, Salva Salmani‐Rezaie, Sankalpa Hazra, Utkarsh Saha, Maya Ramesh, Aiden Ross, Betül Pamuk, Long‐Qing Chen, David A. Muller, Darrell G. Schlom, Venkatraman Gopalan, Kaveh Ahadi   +11 more
wiley   +1 more source

epitaxy

Citation: 'epitaxy' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09487 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +2 more sources

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality

Cumhuriyet Science Journal
This study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj   +1 more source

Band Alignment and Composition of the Buried TiO2/GaInP Interface

Advanced Materials Interfaces, EarlyView.
Buried TiO2$\text{TiO}_2$/GaInP interfaces formed by mild plasma‐enhanced ALD are shown to be largely insensitive to the initial GaInP surface condition. Angle‐dependent photoelectron spectroscopy reveals similar interfacial chemistry and band alignment for phosphorus‐rich and naturally oxidized surfaces, demonstrating a robust pathway for reproducible
David Ostheimer, Sahar Shekarabi, Julius Kühne, Mohammad Amin Zare Pour, Kai Daniel Hanke, Chris Yannic Bohlemann, Juliane Koch, Oliver Bienek, Agnieszka Paszuk, Wolfram Jaegermann, Ian D. Sharp, Thomas Hannappel   +11 more
wiley   +1 more source

Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)

Small Structures
Insulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices.
Ju‐Hyun Jung, Chao Zhao, Seong‐Jun Yang, Jun‐Ho Park, Woo‐Ju Lee, Su‐Beom Song, Jonghwan Kim, Chan‐Cuk Hwang, Seung‐Hwa Baek, Feng Ding, Cheol‐Joo Kim   +10 more
doaj   +1 more source

Engineering Exciton g‐Factors With Light in Type‐II Heterostructures

Advanced Optical Materials, EarlyView.
All‐optical approaches have emerged as cutting‐edge alternatives for ultrafast, energy‐efficient, and spatially localized tuning and switching of material properties. In our work, we demonstrate how light intensity alone can be leveraged to engineer g‐factors from a single‐type of carrier in type‐II heterostructures through Coulomb‐induced wavefunction
G. M. Jacobsen, V. A. Oliveira, B. L. Liang, A. Pelais, M. E. Ware, G. J. Salamo, G. E. Marques, Yu. I. Mazur, V. Lopez‐Richard, M. D. Teodoro   +9 more
wiley   +1 more source

Reduction of thermal conductivity by nanopillar inclusion in thermoelectric vertically aligned nanocomposites

JPhys Energy
The phonon-glass electron-crystal paradigm has guided thermoelectric research in recent years. However, the inherent conflict between atomic disorder reducing phonon conduction, and the order required to maintain high electron mobility, creates a ...
Marijn W van de Putte, Jasman Singh Gambhir, Nicolas Gauquelin, Alexandros Sarantopoulos, Daniel Monteiro Cunha, Johan Verbeeck, Gertjan Koster, Francisco Rivadulla, Mark Huijben   +8 more
doaj   +1 more source

Growth and applications of GeSn-related group-IV semiconductor materials

Science and Technology of Advanced Materials, 2015
We review the technology of Ge1−xSnx-related group-IV semiconductor materials for developing Si-based nanoelectronics. Ge1−xSnx-related materials provide novel engineering of the crystal growth, strain structure, and energy band alignment for realising ...
Shigeaki Zaima, Osamu Nakatsuka, Noriyuki Taoka, Masashi Kurosawa, Wakana Takeuchi, Mitsuo Sakashita   +5 more
doaj   +1 more source