Results 71 to 80 of about 53,075 (307)

Leakage Current Mechanisms in SiGe HBTs Fabricated Using Selective and Nonselective Epitaxy

, 2001
SiGe heterojunction bipolar transistors (HTBs) have been fabricated using selective epitaxy for the Si collector, followed in the same growth step by nonselective epitaxy for the p+ SiGe base and n-Si emitter cap.
Ashburn, Peter, Lamb, Andrew C., Bonar, J.M., Cristiano, Fuccio, Bonar, J. M., Hemment, P. L. F., Schiz, J. F. W., Hemment, Peter L. F., Hall, Stephen, Schiz, J.F.W.   +9 more
core  

Programmable Stepwise Heteroepitaxial Growth of Colloidal Crystals With Different Phases

Advanced Materials, EarlyView.
Stepwise heteroepitaxial growth is adapted to colloidal crystal engineering with DNA, enabling face‐centered cubic (fcc) facets to grow on body‐centered cubic (bcc) crystals with 110 facets. This approach tolerates large lattice mismatches, extending heteroepitaxy beyond the limits of conventional atomic systems.
Xiaowei Liu, Yuanwei Li, Ramin Yazdaanpanah, Ye Zhang, Rachel R. Chan, Xiaobing Hu, Yiming Yang, Vinayak P. Dravid, Koray Aydin, Chad A. Mirkin   +9 more
wiley   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Van der Waals Chromium Telluride Thin Films Prepared by Hybrid Pulsed Laser Deposition With Tunable Magnetism

Advanced Materials Interfaces, EarlyView.
Epitaxial Cr(1+δ)Te2 thin films were synthesized via hybrid Pulsed Laser Deposition (PLD) that combined Molecular Beam Epitaxy (MBE) techniques with PLD. Control of the Cr intercalation, δ, enabled modulation of magnetic anisotropy, Curie temperature, and transport properties.
Pia Henning, Anna Tschesche, Tobias Meyer, Jasnamol Palakkal   +3 more
wiley   +1 more source

Unraveling a Rare Polygonal Gold–Pyrite Assemblage: Insights from the Lena Province, Bodaibo Mining District (Russia)

Crystals
A rare polygonal gold assemblage from the Bodaibo mining district (Russia) was analyzed in this study. It resembles cubic native gold from the same area described as a gold pseudomorph after pyrite.
Isabella Pignatelli, Gaston Giuliani, Christophe Morlot, Louis-Dominique Bayle   +3 more
doaj   +1 more source

Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

Nature Communications, 2019
Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex ...
Monica Bollani, Marco Salvalaglio, Abdennacer Benali, Mohammed Bouabdellaoui, Meher Naffouti, Mario Lodari, Stefano Di Corato, Alexey Fedorov, Axel Voigt, Ibtissem Fraj, Luc Favre, Jean Benoit Claude, David Grosso, Giuseppe Nicotra, Antonio Mio, Antoine Ronda, Isabelle Berbezier, Marco Abbarchi   +17 more
doaj   +1 more source

Xenes for Sustainable Energy: A Roadmap From First‐Principles Design to Practical Deployment

Advanced Materials Interfaces, EarlyView.
Emerging 2D Xenes are advancing from theoretical predictions toward practical energy‐storage and conversion technologies through the integration of first‐principles modelling, experimental synthesis, electrochemical validation, and AI‐assisted materials design, enabling accelerated discovery of high‐performance and sustainable electrochemical systems ...
Onur Karaman, Ceren Karaman
wiley   +1 more source

Chip‐Integrated Metasurface‐GaAsSb Nanowire Array Photodetectors for Single‐Pixel Polarimetric Imaging

Advanced Optical Materials, EarlyView.
A 2×2 multiplexed GaAsSb nanowire photodetector array integrated with L‐shaped metasurfaces is developed for miniaturized infrared polarimetry. Leveraging non‐radiating anapole states that facilitate near‐field enhancement, the device demonstrates strong polarization selectivity at 835 nm.
Longsibo Huang, Ziyuan Li, Yitao Yang, Yang Yu, Lei Xu, Li Li, Songqin Zhang, Han Wang, Wenwu Pan, Chaohao Chen, Weiqi Jin, Wen Lei, Lorenzo Faraone, Chennupati Jagadish, Lan Fu   +14 more
wiley   +1 more source

Remote epitaxy

Remote epitaxy is an emerging technology for producing single-crystalline, free-standing thin films and structures. The method uses 2D van der Waals materials as semi-transparent interlayers that enable epitaxy and release of epitaxial layers at the 2D ...
Lee, Kyusang, Hong, Young Joon, Kim, Hyunseok, Ji, Jongho, Kum, Hyun S., Bae, Sang-Hoon, Shi, Jian, Lee, Sangho, Chang, Celesta S., Kim, Jeehwan, Kong, Wei, Meng, Yuan, Kwon, Yeunwoo, Park, Minseong, Jeong, Junseok, Sun, Xuechun, Jiang, Jie   +16 more
core   +1 more source

Ga1-xMnxSb grown on GaSb substrate by liquid phase epitaxy

, 2004
The Gal(1-x)Mn(x)Sb epilayer was prepared on the n-type GaSb substrate by liquid phase epitaxy. The structure of the Gal(1-x)Mn(x)Sb epilayer was analyzed by double-crystal X-ray diffraction.
Chen CL, Chen NF, Chen, CL (reprint author), Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China., Chen, CL, Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, POB 912, Beijing 100083, Peoples R China., Li YL, Wu JL, 陈诺夫, Liu LF   +7 more
core   +1 more source