Results 71 to 80 of about 11,104 (255)
THE INFLUENCE OF STRUCTURAL DEFECTS ON THE KINETICS OF DIFFUSION PROCESSES
Вестник Дагестанского государственного технического университета: Технические науки, 2016 At present there are various methods of control, based on various physical principles and possessing a wide variety of different sensitivity, diversity of applications.
Т. E. Sarkarov
doaj +1 more source
Phonon Polariton Confinement in Isotopically Pure MOVPE‐Grown BN Triangles
Advanced Optical Materials, EarlyView.Phonon polaritons are confined in MOVPE‐grown isotopically pure 10BN$^{10}{\rm BN}$ triangles. The resonator modes are excited and mapped by near‐field spectroscopy. Through scanning a wide infrared frequency range and modeling, the polariton dispersion relation is retrieved.
Maximilian Scharpey +7 more
wiley +1 more source
Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition
Advanced Physics ResearchHigh electron mobility transistors (HEMT) based on Al1‐xScxN/GaN and Al1‐xYxN/GaN heterostructures promise increased device performance and reliability due to the high sheet charge carrier density and the possibility to grow strain‐free layers on GaN ...
Isabel Streicher +12 more
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Dopant-stimulated growth of GaN nanotube-like nanostructures on Si(111) by molecular beam epitaxy
Beilstein Journal of Nanotechnology, 2018 In this paper we study growth of quasi-one-dimensional GaN nanowires (NWs) and nanotube (NT)-like nanostructures on Si(111) substrates covered with a thin AlN layer grown by means of plasma-assisted molecular beam epitaxy.
Alexey D. Bolshakov +9 more
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Deterministic Transferable Planar Dielectric Mirrors for Investigating Strong Light–Matter Coupling
Advanced Optical Materials, EarlyView.Transferable dielectric distributed Bragg reflectors enable the deterministic assembly of high‐quality planar microcavities while maintaining the intrinsic properties of quantum materials during fabrication. The resulting structures exhibit robust exciton‐photon coupling in monolayer WS2${\rm WS}_{2}$ from cryogenic to room temperature, establishing a ...
Atanu Patra +4 more
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Investigation of Defect Propagation in 4H-SiC: From Substrate to Epitaxial Layers
Applied SciencesSilicon carbide (SiC) is the leading wide bandgap semiconductor for high-power and high-temperature electronics, but the high defect density still limits device performance.
Francesco Maria Fiorino +2 more
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Science and Technology of Advanced Materials, 2016 Epitaxial (PbMg1/3Nb2/3O3)2/3-(PbTiO3)1/3 (PMN-PT) films with different out-of-plane orientations were prepared using a CeO2/yttria stabilized ZrO2 bilayer buffer and symmetric SrRuO3 electrodes on silicon substrates by pulsed laser deposition.
Muhammad Boota +7 more
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Crystals, 2017 Epitaxial growth of diamond films on different facets of synthetic IIa-type single crystal (SC) high-pressure high temperature (HPHT) diamond substrate by a microwave plasma CVD in CH4-H2-N2 gas mixture with the high concentration (4%) of nitrogen is ...
Evgeny E. Ashkinazi +5 more
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Advanced Optical Materials, EarlyView.Germanium (Ge) all‐dielectric metasurfaces can be leveraged to strongly enhance the radiative emission from Ge layers grown on silicon‐on‐insulator substrates by industry‐standard processes. At room‐temperature, the narrowband photoluminescence (PL) intensity is enhanced by a factor ∼40× with respect to unstructured films.
Jon Schlipf +6 more
wiley +1 more source
Growth of Ordered Graphene Ribbons by Sublimation Epitaxy
Crystals, 2018 Ordered graphene ribbons were grown on the surface of 4° off-axis 4H-SiC wafers by sublimation epitaxy, and characterized by using scanning electron microscopy (SEM), atomic force microscopy (AFM) and micro-Raman spectroscopy (μ-Raman).
Shuxian Cai +3 more
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