Results 71 to 80 of about 142,351 (345)

High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor

, 2010
Thick, high quality 4H-SiC epilayers have been grown in a vertical hot-wall chemical vapor deposition system at a high growth rate on (0001) 80 off-axis substrates.
Arthur, Aylward, Chung, Crippa, Dhanaraj, Ellison, Ellison, Fujihira, Ghandhi, Grosse, Iftekhar Chowdhury, Joshua D. Caldwell, Kimoto, Klein, Koshka, Kotamraju, Kumagawa, la Via, Larkin, Larkin, Leone, M.V.S. Chandrasekhar, Macmillan, Masahara, Melnychuk, Myers-Ward, Nakashima, Nakazawa, Paul B. Klein, Pedersen, Powell, Ryu, Su, Tangali Sudarshan, Valente, Vorob'ev, Zhao, Zhao   +37 more
core   +1 more source

A Colloidal Quantum Dot Thermistor and Bolometer

Advanced Materials, EarlyView.
This work introduces colloidal quantum dot thermistors employing a potential barrier structure to tune the activation energy of transport and hence the temperature coefficient of resistance (TCR). Upon integration with plasmonic absorbers, the CQD‐based bolometer device enables room‐temperature wavelength‐selective photodetection across the mid‐ to ...
Gaurav Kumar, Mariona Dalmases, Nima Taghipour, Rajesh Bera, Guy L. Whitworth, Goretti Torres Perez, Miguel Dosil, Gerasimos Konstantatos   +7 more
wiley   +1 more source

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Templated dewetting of single-crystal sub-millimeter-long nanowires and on-chip silicon circuits

Nature Communications, 2019
Fabricating defect-free micro- and nano-circuits over large scales with controlled interconnections remains a challenge. Here, Bollani et al. show a dewetting strategy for engineering arrays of parallel Si-based nanowires up to 0.75 mm and complex ...
Monica Bollani, Marco Salvalaglio, Abdennacer Benali, Mohammed Bouabdellaoui, Meher Naffouti, Mario Lodari, Stefano Di Corato, Alexey Fedorov, Axel Voigt, Ibtissem Fraj, Luc Favre, Jean Benoit Claude, David Grosso, Giuseppe Nicotra, Antonio Mio, Antoine Ronda, Isabelle Berbezier, Marco Abbarchi   +17 more
doaj   +1 more source

Lead Halide Perovskite Photoelectrocatalysis

Advanced Materials, EarlyView.
Lead halide perovskite semiconductors have emerged as highly promising materials for solar fuel and chemical synthesis. This perspective discusses advances made in the rational photoelectrode design to improve solar‐to‐chemical conversion, product scope, and scalability.
Virgil Andrei
wiley   +1 more source

Unraveling a Rare Polygonal Gold–Pyrite Assemblage: Insights from the Lena Province, Bodaibo Mining District (Russia)

Crystals
A rare polygonal gold assemblage from the Bodaibo mining district (Russia) was analyzed in this study. It resembles cubic native gold from the same area described as a gold pseudomorph after pyrite.
Isabella Pignatelli, Gaston Giuliani, Christophe Morlot, Louis-Dominique Bayle   +3 more
doaj   +1 more source

Energy Band Alignment and Electro‐Optical Behavior of Nearly Unstrained Monolayer MoS2 Heterostructures With GaN

Advanced Materials Interfaces, EarlyView.
Large size (∼100 µm) monolayer MoS2 grown by LPI‐CVD on n‐GaN exhibit a high n‐type doping, very low strain, and a type‐I band alignment at MoS2/GaN interface. Photocurrent measurements under illumination with photon energies from ∼2 to ∼5 eV show superior electro‐optical performances of these MoS2/n‐GaN heterojunctions as compared to Ni/n‐GaN devices ...
Salvatore Ethan Panasci, Emanuela Schilirò, Giuseppe Greco, Patrick Fiorenza, Fabrizio Roccaforte, Fiorenza Esposito, Igor Píš, Federica Bondino, Antonino Madonia, Marco Cannas, Simonpietro Agnello, Luca Seravalli, Filippo Giannazzo   +12 more
wiley   +1 more source

Exploring the Potential of Microwave Annealing for Enhancing Si‐based GeSn Lasers

Advanced Materials Technologies, EarlyView.
We explore low‐thermal‐budget microwave annealing to enhance the performance of group‐IV GeSn lasers on Si. Microwave annealing under optimal conditions can simultaneously relax unwanted compressive strain and enhance the material quality of the GeSn active layer, thereby reducing the threshold and increasing the laser operating temperature.
Yue‐Tong Jheng, Cheng‐Feng Liu, Ruei‐Jhang Wang, Yu Cheng, Lung‐Yi Hsu, Yonder Berencén, Shengqiang Zhou, Hanh Thi‐Thu Tran, Guo‐En Chang   +8 more
wiley   +1 more source

Ferromagnetism in (In,Mn)As Diluted Magnetic Semiconductor Thin Films Grown by Metalorganic Vapor Phase Epitaxy

, 2002
In1-xMnxAs diluted magnetic semiconductor (DMS) thin films have been grown using metalorganic vapor phase epitaxy (MOVPE). Tricarbonyl(methylcyclopentadienyl)manganese was used as the Mn source.
A. J. Blattner, B. W. Wessels, Bean, Blattner, Chernenko, De Boeck, Dietl, Dietl, Haneda, Munekata, Ohno, Ohno, Ohno, Overberg, Pytlik, Reed, Soo, Soo, van Schilfgaarde, von Molnar   +19 more
core   +1 more source

epitaxy

Citation: 'epitaxy' in the IUPAC Compendium of Chemical Terminology, 5th ed.; International Union of Pure and Applied Chemistry; 2025. Online version 5.0.0, 2025. 10.1351/goldbook.09487 • License: The IUPAC Gold Book is licensed under Creative Commons Attribution-ShareAlike CC BY-SA 4.0 International for individual terms ...
openaire   +2 more sources