Results 71 to 80 of about 62,943 (302)
Advanced Materials Interfaces, EarlyView.Thin SiGe buffer layers are grown by oxidative solid‐phase epitaxy, resulting in a nanopatterning of varying Ge concentration across the surface of the sample. The nanopatterning is caused by a hexagonal network of dislocations on the SiGe/Si(111) interface, and is visible by scanning electron microscopy, providing a non‐destructive method for ...
Sophie E. Bierer +7 more
wiley +1 more source
A Study on the Growth Conditions Role in Defining InGaAs Epitaxial Layer Quality
Cumhuriyet Science JournalThis study delves into the epitaxial growth and characterization of InxGa1-xAs layers on InP substrate, a critical area in the development of high-performance III-V semiconductor devices.
Sezai Elagöz, Meryem Demir
doaj +1 more source
Deterministic Transferable Planar Dielectric Mirrors for Investigating Strong Light–Matter Coupling
Advanced Optical Materials, EarlyView.Transferable dielectric distributed Bragg reflectors enable the deterministic assembly of high‐quality planar microcavities while maintaining the intrinsic properties of quantum materials during fabrication. The resulting structures exhibit robust exciton‐photon coupling in monolayer WS2${\rm WS}_{2}$ from cryogenic to room temperature, establishing a ...
Atanu Patra +4 more
wiley +1 more source
Step‐Directed Epitaxy of Unidirectional Hexagonal Boron Nitride on Vicinal Ge(110)
Small StructuresInsulating hexagonal boron nitride (hBN) films with precisely controlled thickness are ideal dielectric components to modulate various interfaces in electronic devices.
Ju‐Hyun Jung +10 more
doaj +1 more source
Remote epitaxy is an emerging technology for producing single-crystalline, free-standing thin films and structures. The method uses 2D van der Waals materials as semi-transparent interlayers that enable epitaxy and release of epitaxial layers at the 2D ...
Lee, Kyusang +16 more
core +1 more source
Photoluminescent Color Centers on a Mainstream Silicon Photonic Foundry Platform
Advanced Optical Materials, EarlyView.Silicon photonic chips route and process light efficiently but are inherently inefficient at generating it. Here, bright light‐emitting defects, W‐centers, are written into the silicon layer of finished chips from a mainstream commercial foundry: high‐energy ions are implanted straight through the protective oxide and activated by a 250∘C$^\circ{\rm C}$
Prosper Dellah Allo +7 more
wiley +1 more source
Advanced Photonics Research, Volume 6, Issue 5, May 2025.Microfabrication using nano‐ to micron‐sized blocks has transformative potential for next‐gen electronics, optoelectronics, and materials. Traditional methods are limited by scalability and precision. STIC, a single‐laser system for precise colloid manipulation and immobilization using femtosecond lasers, is introduced that enables efficient 3D ...
Krishangi Krishna +4 more
wiley +1 more source
JPhys EnergyThe phonon-glass electron-crystal paradigm has guided thermoelectric research in recent years. However, the inherent conflict between atomic disorder reducing phonon conduction, and the order required to maintain high electron mobility, creates a ...
Marijn W van de Putte +8 more
doaj +1 more source
Advanced Science, EarlyView.Based on orbital magnetic moment control, a material design strategy is proposed for a giant converse magnetoelectric effect in multiferroic heterostructures. This study will pioneer a promising route toward low‐power spintronic devices with an electric field.
Takamasa Usami +5 more
wiley +1 more source
Advancing the Growth of GaN on AlScN and AlYN by Metal–Organic Chemical Vapor Deposition
Advanced Physics ResearchHigh electron mobility transistors (HEMT) based on Al1‐xScxN/GaN and Al1‐xYxN/GaN heterostructures promise increased device performance and reliability due to the high sheet charge carrier density and the possibility to grow strain‐free layers on GaN ...
Isabel Streicher +12 more
doaj +1 more source