Results 51 to 60 of about 62,943 (302)

Ferromagnetism of Molecular Beam Epitaxy‐grown Ultra‐thin Cr2Ge2Te6 Films Down to the Monolayer Limit on Si Substrates

Advanced Materials, EarlyView.
Uniform monolayer Cr2Ge2Te6 films are achieved on Si substrates by molecular beam epitaxy. Intrinsic ferromagnetism with perpendicular magnetic anisotropy is established in the films by anomalous Hall effect and superconducting quantum interference device measurements, albeit with strong magnetic fluctuations characteristic of its 2D nature.
Pengfei Ji, Ruixuan Liu, Tianchen Zhu, Yang Chen, Yitian Tong, Jinxuan Liang, Yunhe Bai, Yunyi Zang, Zuhan Geng, Fangting Chen, Xiyu Hong, Jiatong Zhang, Luyi Yang, Qi‐Kun Xue, Ke He, Xiao Feng   +15 more
wiley   +1 more source

Giant Orbital Rashba–Edelstein Effect in Crystalline Cu2O/Cu Heterostructures

Advanced Materials, EarlyView.
An enhanced orbital Rashba–Edelstein effect is demonstrated in a crystalline Cu2O/Cu heterostructure, compared to naturally oxidized CuOx structures, highlighting the critical role of crystallinity and interface control in orbital torque generation. The resulting spin torque conductivity exceeds that of Pt, indicating the potential of orbital torque ...
San Ko, Jaimin Kang, Su Jae Kim, Hanhwi Jang, Do‐Kyeong Nam, Minseok Kang, Sunghoon Kim, Yeon Sik Jung, Se‐Young Jeong, Kab‐Jin Kim, Byong‐Guk Park   +10 more
wiley   +1 more source

Tuning Epitaxial Growth of Nb on MgO(100)

Advanced Physics Research, 2023
Niobium thin films are central to many applications, such as superconducting radio‐frequency cavities and superconducting qubits, due to its relatively high superconducting temperature and easiness to form heterostructures.
Laura Guasco, Liz Montañez Huaman, Yury N. Khaydukov, Thomas Keller, Sabine Pütter   +4 more
doaj   +1 more source

Defect‐Templated Phase Engineering in Atomically Thin Metals

Advanced Materials, EarlyView.
Graphene defects are transformed from passive imperfections into programmable templates for phase‐selective growth of atomically thin silver. Plasma‐generated boundary defects favor Ag(1), whereas sp3‐rich zero‐layer graphene promotes Ag(2). This defect‐directed intercalation links local graphene chemistry to crystalline phase, electronic structure ...
Arpit Jain, Boyang Zheng, Sawani Datta, Kanchan Ulman, Jakob Henz, Matthew Wei‐Jun Liu, Van Dong Pham, Wen He, Chengye Dong, Li‐Syuan Lu, Alexander Vera, Nader Sawtarie, Wesley Auker, Ke Wang, Bob Hengstebeck, Zachary W. Henshaw, Shreya Mathela, Maxwell Wetherington, William H. Blades, Kenneth Knappenberger, Ursula Wurstbauer, Su Ying Quek, Ulrich Starke, Shengxi Huang, Vincent H. Crespi, Joshua A. Robinson   +25 more
wiley   +1 more source

MBE of dilute-nitride optoelectronic devices

, 2013
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its unique place as a key technology, which enables the development of new types of optoelectronics devices.
Guina, M., Wang, Shumin, Wang, Shu Min,, Mircea Guina, Wang, Shu Min, Guina, M.,, Shu Min Wang   +6 more
core   +1 more source

Multi-scale modelling of III-nitrides: from dislocations to the electronic structure [PDF]

, 2009
Gallium nitride and its alloys are direct band gap semiconductors with a wide variety of applications. Of particular importance are light emitting diodes and laser diodes. Due to the lack of suitable lattice-matched substrates, epitaxial layers contain a

core   +2 more sources

Deterministic Field‐Free Switching of Perpendicular Magnetization by Bulk Mirror Symmetry Broken Bi1−xSbx (012) with High Spin Hall Conductivity

Advanced Materials, EarlyView.
Crystal orientation and domain engineering enable bulk mirror symmetry breaking in Bi1−xSbx, resulting in ultralow current‐induced switching of perpendicular magnetization without an external field. By exploiting single‐domain Bi1−xSbx (012), the authors demonstrate an out‐of‐plane spin Hall conductivity of ∼1.12×105ℏ2eΩ−1m−1$ \sim \!1.12 \ensuremath ...
Seungwon Rho, Youngmin Lee, Jaeseok Huh, Jaehan Park, Hyeong‐Jun Son, Dowoo Pyeon, Mann‐Ho Cho   +6 more
wiley   +1 more source

Nitrogen-vacancy centers in epitaxial laterally overgrown diamond: towards up-scaling of color center-based quantum technologies

Materials for Quantum Technology
Providing high-quality, single-crystal diamond (SCD) with a large area is desirable for up-scaling quantum technology applications that rely on color centers in diamond.
Nimba Oshnik, Sebastian Westrich, Nina Burmeister, Oliver Roman Opaluch, Lahcene Mehmel, Riadh Issaoui, Alexandre Tallaire, Ovidiu Brinza, Jocelyn Achard, Elke Neu   +9 more
doaj   +1 more source

Epitaxy on polycrystalline substrates [PDF]

Science, 2017
The growth of new oxide phases is explored with multiple surface ...
Pandya, Shishir, Martin, Lane W
openaire   +4 more sources

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source