Results 51 to 60 of about 53,075 (307)

Optimization of the concentration's distribution of the carriers on thickness of epitaxial layers [PDF]

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2007
A plunger device for liquid epitaxy of АIIIВV semiconductor compositions has been modified. It has been shown that the impurity concentration gradient, creating inner electrical fields in the photodetecting and active regions of semiconductor structures,
Karimov A. V., Yodgorova D. M., Giyasova F. A., Saidova R. A., Haydarov Sh. A.   +4 more
doaj  

Giant Magnetic Coercivity Driven by Spin‐Bag Ferromagnetism in Epitaxial Sr3YCo4O10+δ Films with Engineered 2D Oxygen Vacancy Ordering

Advanced Functional Materials, EarlyView.
A giant magnetic coercivity and a vertical shift of hysteresis loops are demonstrated in Sr3YCo4O10+δ epitaxial films. The hard magnetic behavior originates from ferromagnetic spin bags stabilized within a long‐range ordered oxygen‐vacancy structure.
Yanbin Chen, Roger Guzman, Xiaomin Jia, Jialu Wu, Xing Xu, Li Sun, Jinbo Pan, Shixuan Du, Myung‐Hwan Whangbo, Wu Zhou, Jing Ma, Ce‐wen Nan, Chonglin Chen   +12 more
wiley   +1 more source

Effect of epitaxy on interband transitions in ferroelectric KNbO3

New Journal of Physics, 2015
Very large lattice strain and strain-induced polarization are achieved in KNbO _3 using epitaxial growth of a thin KNbO _3 film onto a (001)-oriented SrTiO _3 single-crystal substrate.
M Tyunina, L D Yao, D Chvostova, T Kocourek, M Jelinek, A Dejneka, S van Dijken   +6 more
doaj   +1 more source

Germanium epitaxy on silicon [PDF]

Science and Technology of Advanced Materials, 2014
With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material
Hui Ye, Jinzhong Yu
openaire   +3 more sources

Artificial Intelligence‐Assisted Workflow for Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling

Advanced Materials, EarlyView.
AI‐Assisted Workflow for (Scanning) Transmission Electron Microscopy: From Data Analysis Automation to Materials Knowledge Unveiling. Abstract (Scanning) transmission electron microscopy ((S)TEM) has significantly advanced materials science but faces challenges in correlating precise atomic structure information with the functional properties of ...
Marc Botifoll, Ivan Pinto‐Huguet, Enzo Rotunno, Thomas Galvani, Catalina Coll, Payam Habibzadeh Kavkani, Maria Chiara Spadaro, Yann‐Michel Niquet, Martin Børstad Eriksen, Sara Martí‐Sánchez, Georgios Katsaros, Giordano Scappucci, Peter Krogstrup, Giovanni Isella, Andreu Cabot, Gonzalo Merino, Pablo Ordejón, Stephan Roche, Vincenzo Grillo, Jordi Arbiol   +19 more
wiley   +1 more source

Role of Liquid Composition in the Transient Liquid Assisted Growth of Superconducting YBa2Cu3O7‐δ Films

Advanced Materials, EarlyView.
The Y supersaturation in the [Ba‐Cu(I/II)‐O] transient liquid composition is the driving force toward YBCO nucleation and growth in TLAG. Tuning the initial (Ba:Cu) molar ratio in the ink composition determines the YBCO epitaxial nucleation through supersaturation control.
Lavinia Saltarelli, Diana García, Laia Soler, Elzbieta Pach, Kapil Gupta, Daniel Sanchez‐Rodriguez, Jordi Aguilar, Víctor Fuentes, Eduardo Solano, Cristian Mocuta, Jordi Farjas, Xavier Obradors, Teresa Puig   +12 more
wiley   +1 more source

MBE of dilute-nitride optoelectronic devices

, 2013
Molecular beam epitaxy of dilute-nitride materials has progressed a long way towards claiming its unique place as a key technology, which enables the development of new types of optoelectronics devices.
Guina, M., Wang, Shumin, Wang, Shu Min,, Mircea Guina, Wang, Shu Min, Guina, M.,, Shu Min Wang   +6 more
core   +1 more source

Microscopic Insights into Magnetic Warping and Time‐Reversal Symmetry Breaking in Topological Surface States of Rare‐Earth‐Doped Bi2Te3

Advanced Materials, EarlyView.
Magnetic doping of the topological insulator Bi2Te3 with erbium adatoms induces out‐of‐plane magnetism and breaks time‐reversal symmetry, opening a Dirac gap and driving a Fermi surface transition from hexagonal to star‐of‐David geometry. Microscopy, spectroscopy, and magnetic dichroism reveal atomically controlled magnetic interactions that tailor the
Beatriz Muñiz Cano, Fabián Calleja, Ji Dai, Massimo Tallarida, Vera Marinova, Alessandro Barla, Marc G. Cuxart, Pierluigi Gargiani, Gonzalo N. Molina, José Angel Silva‐Guillén, Adriana I. Figueroa, Kevin García‐Díez, Sergio O. Valenzuela, Aitor Mugarza, Amadeo L. Vázquez de Parga, Rodolfo Miranda, Francisco Guinea, Manuela Garnica, Miguel A. Valbuena   +18 more
wiley   +1 more source

MOLECULAR-DYNAMICS SIMULATION OF EPITAXIAL GROWTH OF NANOSIZED LEAD HETEROSTRUCTURES ON NICKEL [PDF]

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2012
Epitaxial growth of nanosized Pb heterostructures (islands) on faces (100) and (111) of Ni was simulated using the isotheral molecular dynamics. Specific features were revealed of the epitaxy in metallic systems in comparison with Lennard-Jones systems ...
A.G. Bembel, S.A. Vasilyev, V.M. Samsonov   +2 more
doaj  

Opportunities of Semiconducting Oxide Nanostructures as Advanced Luminescent Materials in Photonics

Advanced Materials, EarlyView.
The review discusses the challenges of wide and ultrawide bandgap semiconducting oxides as a suitable material platform for photonics. They offer great versatility in terms of tuning microstructure, native defects, doping, anisotropy, and micro‐ and nano‐structuring. The review focuses on their light emission, light‐confinement in optical cavities, and
Ana Cremades, Pedro Hidalgo, David Maestre, Ruth Martínez‐Casado, Emilio Nogales, Beatriz Rodríguez, G. Cristian Vásquez, Bianchi Méndez   +7 more
wiley   +1 more source