Results 51 to 60 of about 142,351 (345)

Omnipolar Magnetic Field Detection by Superlattice‐Based Hall Sensor

Advanced Functional Materials, EarlyView.
Magnetic‐field‐induced electronic switching is demonstrated in unit‐cell‐engineered La0.7Sr0.3MnO3–BiFeO3 superlattices. Distinct substrate terminations modify magnetic and transport properties. Hall resistance measurements show omnipolar, hysteretic anomalous Hall switching above the Curie temperature, arising from Fe─Mn interfacial exchange, enabling
Mark Huijben, Nicolas Gauquelin, Arno Annys, Zhaoliang Liao, Jo Verbeeck, Guus Rijnders, Gertjan Koster   +6 more
wiley   +1 more source

Achieving High ON State Current through Ferroelectric Polarization‐Dependent Interfacial Resistance Switching in Undoped Orthorhombic HfO2 Films

Advanced Functional Materials, EarlyView.
Ferroelectric tunnel junction devices based on epitaxial undoped ferroelectric HfO2 films demonstrate stable switching endurance of over 106 switching cycles, low write voltages of ±3 V, 16 measured resistance states, and neuromorphic capability.
Markus Hellenbrand, Nuno Estrócio, Ji S. Kim, Babak Bakhit, Marian C. Istrate, Corneliu Ghica, Tiago Rebelo, Nives Strkalj, Abin Varghese, Bernardo Almeida, Luís S. Marques, Bipin Rajendran, Judith L. MacManus‐Driscoll, José P. B. Silva   +13 more
wiley   +1 more source

Atomic Layer Deposition in Transistors and Monolithic 3D Integration

Advanced Functional Materials, EarlyView.
Transistors are fundamental building blocks of modern electronics. This review summarizes recent progress in atomic layer deposition (ALD) for the synthesis of two‐dimensional (2D) metal oxides and transition‐metal dichalcogenides (TMDCs), with particular emphasis on their enabling role in monolithic three‐dimensional (M3D) integration for next ...
Yue Liu, Taoyu Zou, Cheng‐Yan Xu, Liang Zhen, Yang Li, Yong‐Young Noh   +5 more
wiley   +1 more source

MOLECULAR-DYNAMICS SIMULATION OF EPITAXIAL GROWTH OF NANOSIZED LEAD HETEROSTRUCTURES ON NICKEL [PDF]

Физико-химические аспекты изучения кластеров, наноструктур и наноматериалов, 2012
Epitaxial growth of nanosized Pb heterostructures (islands) on faces (100) and (111) of Ni was simulated using the isotheral molecular dynamics. Specific features were revealed of the epitaxy in metallic systems in comparison with Lennard-Jones systems ...
A.G. Bembel, S.A. Vasilyev, V.M. Samsonov   +2 more
doaj  

Tuning Epitaxial Growth of Nb on MgO(100)

Advanced Physics Research, 2023
Niobium thin films are central to many applications, such as superconducting radio‐frequency cavities and superconducting qubits, due to its relatively high superconducting temperature and easiness to form heterostructures.
Laura Guasco, Liz Montañez Huaman, Yury N. Khaydukov, Thomas Keller, Sabine Pütter   +4 more
doaj   +1 more source

Metallic 1T Phase, 3d1 Electronic Configuration and Charge Density Wave Order in Molecular Beam Epitaxy Grown Monolayer Vanadium Ditelluride. [PDF]

, 2019
We present a combined experimental and theoretical study of monolayer vanadium ditelluride, VTe2, grown on highly oriented pyrolytic graphite by molecular-beam epitaxy.
Bussolotti, Fabio, Chen, Wei, de Jong, Michel P, Feng, Yuan Ping, Goh, Johnson, Morton, Simon A, N'Diaye, Alpha T, Wee, Andrew TS, Wong, Ping Kwan Johnny, Yin, Xinmao, Zhang, Lei, Zhang, Wen, Zhou, Jun   +12 more
core   +3 more sources

Germanium epitaxy on silicon [PDF]

Science and Technology of Advanced Materials, 2014
With the rapid development of on-chip optical interconnects and optical computing in the past decade, silicon-based integrated devices for monolithic and hybrid optoelectronic integration have attracted wide attention. Due to its narrow pseudo-direct gap behavior and compatibility with Si technology, epitaxial Ge-on-Si has become a significant material
Hui Ye, Jinzhong Yu
openaire   +3 more sources

Kinetic Regimes of Hydrogen Absorption in Thin Films

Advanced Functional Materials, EarlyView.
Knowledge of the hydrogen incorporation mechanisms in thin layers in relation to the amount absorbed is essential to design coatings and devices compatible with hydrogen‐based technologies. A combination of simultaneous in situ methods gives detailed insight into the hydrogenation of a prototypical hydrogen absorber layer in a time‐dependent manner ...
Laura Guasco, Sabine Pütter, Yury N. Khaydukov, Luca Silvi, Mariano A. Paulin, Attila Csik, Thomas Keller, Bernhard Keimer   +7 more
wiley   +1 more source

Superconductivity in single-crystalline, aluminum- and gallium-hyperdoped germanium

, 2019
Superconductivity in group IV semiconductors is desired for hybrid devices combining both semiconducting and superconducting properties. Following boron doped diamond and Si, superconductivity has been observed in gallium doped Ge, however the obtained ...
Grzybowski, Michał J., Heera, Viton, Helm, Manfred, Hübner, René, Mazur, Grzegorz P., Prucnal, Slawomir, Qin, Xin, Rebohle, Lars, Sawicki, Maciej, Skorupa, Wolfgang, Voelskow, Matthias, Wang, Mao, Yuan, Ye, Zhou, Shengqiang   +13 more
core   +1 more source

Molecular Beam Epitaxy of GaN Nanowires on Epitaxial Graphene

Nano Letters, 2017
We demonstrate an all-epitaxial and scalable growth approach to fabricate single-crystalline GaN nanowires on graphene by plasma-assisted molecular beam epitaxy. As substrate, we explore several types of epitaxial graphene layer structures synthesized on SiC. The different structures differ mainly in their total number of graphene layers.
Sergio Fernández-Garrido, Manfred Ramsteiner, Guanhui Gao, Lauren A. Galves, Bharat Sharma, Pierre Corfdir, Gabriele Calabrese, Ziani de Souza Schiaber, Carsten Pfüller, Achim Trampert, João Marcelo J. Lopes, Oliver Brandt, Lutz Geelhaar   +12 more
openaire   +4 more sources