Results 1 to 10 of about 2,908 (186)
An Advanced Epitaxial Strategy Enabling Vertical GaN Devices on Silicon Wafers
Advanced Physics Research, EarlyView.A universal epitaxial strategy overcomes the long‐standing limitation of insulating buffers in GaN‐on‐Silicon technology. By exploiting a unique amorphous‐like interlayer (AL‐IL) formed via ultrathin metal pre‐deposition, high‐quality GaN films with excellent vertical conductivity are realized on silicon wafers.
Fumio Kawamura +2 more
wiley +1 more source
ENERGY &ENVIRONMENTAL MATERIALS, EarlyView.Low‐dimensional materials (0D, 1D, and 2D) exhibit unique electronic and physicochemical properties, enabling advanced nanoelectronic and optoelectronic devices. Mixed‐dimensional heterostructures combine these materials to enhance functionality.
Qaisar Alam +3 more
wiley +1 more source
31% European InGaP/GaAs/InGaAs Solar Cells for Space Application
E3S Web of Conferences, 2017 We report a triple junction InGaP/GaAs/InGaNAs solar cell with efficiency of ~31% at AM0, 25 °C fabricated using a combined molecular beam epitaxy (MBE) and metal-organic chemical vapour deposition (MOCVD) processes.
Campesato Roberta +6 more
doaj +1 more source
ZnO Nanowires by Chemical Bath Deposition: A Review on Doping and Functional Devices
Electron, EarlyView.This review reports the most recent and well‐established state‐of‐the‐art and scientific challenges related to the doping of ZnO nanowires by chemical bath deposition, encompassing native point and hydrogen‐related defects, as well as extrinsic dopants.
Clément Lausecker +3 more
wiley +1 more source
Electron, EarlyView.Physics‐driven advances in optical nanobiosensors for rapid, miniaturized, and point‐of‐care diagnostics for next‐generation decentralized and personalized healthcare based on sensor intelligence. ABSTRACT Public health emergencies and the escalating burden of chronic diseases necessitate a paradigm shift from centralized laboratory testing to rapid ...
Vishal Chaudhary +5 more
wiley +1 more source
AIP Advances, 2017 Few layer hexagonal boron nitride (h-BN) films were grown on 2-inch sapphire substrates by using metal-organic chemical vapor deposition (MOCVD) with two different carrier gases, hydrogen (H2) and nitrogen (N2 ...
Dong Yeong Kim +5 more
doaj +1 more source
physica status solidi (RRL) – Rapid Research Letters, Volume 19, Issue 5, May 2025.This study presents a photodetector based on atomically thin MoS2 on an InP substrate, forming an n‐MoS2/p‐InP type‐II staggered heterojunction. The device exhibits excellent rectifying properties with an ideality factor of 1.57 and achieves a peak photoresponsivity of 960 mA W−1, while MoS2 provides stable passivation for InP. III–V semiconductors are
Dong Hwi Choi +8 more
wiley +1 more source
MOCVD and ferromagnetic resonance of epitaxial Lu3Fe5O12 films for high-frequency applications
Конденсированные среды и межфазные границыObjectives: The production of thin films of rare earth iron garnets with a narrower ferrimagnetic resonance (FMR) linewidth is extremely important in the development of spintronic materials.
Abduvosit A. Hafizov +9 more
doaj +1 more source
Sub-nanometer ultrathin epitaxy of AlGaN and its application in efficient doping
Light: Science & Applications, 2022 A desorption-tailoring strategy is demonstrated to steadily prepare self-assembled p-AlGaN superlattices with sub-nanometer ultrathin barriers by MOCVD, which juggle the hole concentration and transport.
Jiaming Wang +11 more
doaj +1 more source
Physical Unclonable Function Based on 3D‐NAND Flash Array Structure With Multi‐Chip Implementation
Small, EarlyView.Physical unclonable function (PUF) based on a 3D‐NAND flash array is proposed, featuring a multi‐chip structure and a massive challenge–response pair (CRP) capacity. The presented utilizes intrinsic string current variations experimentally verified across eight fabricated 48 × 24 NAND flash arrays.
Hwiho Hwang +4 more
wiley +1 more source