Results 21 to 30 of about 15,720 (226)

Electrical properties of MOCVD HfO2 dielectric layers with polysilicon gate electrodes for CMOS applications [PDF]

, 2003
Electrical properties of MOS capacitors using MOCVD HfO2 as gate dielectric have been investigated. A 900 degreesC Is activation anneal of Ph-doped 680 degreesC-RTCVD demonstrated a good compatibility with high-k layers.
Rittersma, ZM, Ponomarev, Y, Date, L, Massoubre, David, Pique, D, van-Autryve, L, Caymax, M, Van Elshocht, S, Roozeboom, F   +8 more
core   +1 more source

Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv, S. I. Krukovskii, S. Yu. Larkin, A. Yu. Avksent'ev, R. S. Krukovskii   +4 more
doaj   +1 more source

Realization of exciton-polariton condensation in GaAs-based microcavity grown by metalorganic chemical vapor deposition

Physical Review Research, 2022
Metalorganic chemical vapor deposition (MOCVD) has not been often used for studying exciton-polariton condensation and developing polaritonic devices, although it is a powerful mass productive method for practical applications.
Daegwang Choi, Min Park, Chan-Young Sung, Hyoungsoon Choi, Yong-Hoon Cho   +4 more
doaj   +1 more source

An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Materials Research Express, 2021
An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN.
Zixuan Zhang, Yi Luo, Jiadong Yu, Xiang Li, Jian Wang, Wangyang Yu, Lai Wang, Zhibiao Hao, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li   +11 more
doaj   +1 more source

Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP Advances, 2022
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva   +13 more
doaj   +1 more source

Integration of Low‐Voltage Nanoscale MoS2 Memristors on CMOS Microchips

Advanced Functional Materials, EarlyView.
This article presents the first monolithic integration of nanoscale MoS2‐based memristors into the back‐end‐of‐line of foundry‐fabricated CMOS microchips in a one‐transistor‐one‐resistor (1T1R) architecture. The MoS2‐based 1T1R cells exhibit forming‐free, nonvolatile resistive switching with ultra‐low operating voltages, low cycle‐to‐cycle variability ...
Jimin Lee, Sofía Cruces, Xiaohua Liu, Yang Chen, Vasilis A. Maroufidis, Janghyun Jo, Lukas Völkel, Dennis Braun, Michael Möller, Leon Brackmann, Holger Kalisch, Michael Heuken, Andrei Vescan, Rafal E. Dunin‐Borkowski, Joachim Mayer, Stefan Wiefels, Max C. Lemme   +16 more
wiley   +1 more source

Direct hard X-ray photodetector with superior sensitivity based on ZnGa2O4 epilayer grown by metalorganic chemical vapor deposition

Materials Today Advances, 2023
In this work, we have fabricated a highly sensitive direct irradiating X-ray photodetector (DXPD) based on Zinc Gallium Oxide (ZnGa2O4) epilayers with a metal-semiconductor-metal structure. The ZnGa2O4 epilayers were grown on a c-plane sapphire substrate
Siddharth Rana, Shang-Jui Chiu, Chih-Yang Huang, Fu-Gow Tairtan, Yan-Gu Lin, Dong-Sing Wuu, Jitendra Pratap Singh, Guang-Cheng Su, Po-Liang Liu, Ray-Hua Horng   +9 more
doaj   +1 more source

Self‐Powered, Ultra‐Sensitive InGaAs/ITO Nanowire Radial Junction Infrared Photodiode for Low Flux Imaging at Room Temperature

Advanced Functional Materials, EarlyView.
This study reports a self‐powered InGaAs nanowire photodetector achieving single‐photon‐level sensitivity in the shortwave infrared at non‐cryogenic temperatures. The device demonstrates high‐speed imaging capabilities even under extremely low‐flux conditions.
Kosala Dhanawansha, Chaohao Chen, Zhe Li, Tuomas Haggren, Dawei Liu, Yang Yu, Baolei Liu, Sanjay Krishna, Hark H. Tan, Chennupati Jagadish, Lan Fu   +10 more
wiley   +1 more source

Polar Wurtzite NbAlN: A Transition‐Metal Nitride Alloy for Polarization‐Engineered GaN Heterostructures

Advanced Materials, EarlyView.
A novel polar wurtzite alloy, NbAlN, is demonstrated as a transition‐metal‐containing polar barrier for GaN heterostructures. Nb atoms form coherent nanoscale enrichment within the wurtzite lattice without disrupting metal polarity. This study demonstrates that transition metals can be integrated into polar nitrides to enable polarization‐related ...
Atsushi Kobayashi, Souta Kurogi, Tomoya Okuda, Riku Kikuchi, Yusuke Wakamoto, Kouei Kubota, Hikaru Sasaki, Kazuhisa Ikeda, Kanako Shojiki, Takahiro Kawamura, Toru Akiyama, Takehito Seki, Takuya Maeda   +12 more
wiley   +1 more source

Chemical vapor deposition of Tm3Fe5O12 epitaxial films, investigation of their structure and properties in the terahertz range

Конденсированные среды и межфазные границы
In this study, for the search and development of new spintronic materials, thin films of Tm3Fe5O12 iron garnet were obtained by the metalorganic chemical vapor deposition (MOCVD) on single-crystal Gd3Ga5O12(111) – GGG and Y3Al5O12(111) – YAG substrates.
Maria N. Markelova, Abduvosit A. Hafizov, Xiaoyu Shi, Igor E. Graboy, Maxim S. Shanin, Maria R. Konnikova, Alexander P. Shkurinov, Andrey R. Kaul   +7 more
doaj   +1 more source