Results 21 to 30 of about 2,908 (186)

Theory of MOCVD Growth of III-V Nanowires on Patterned Substrates

Nanomaterials, 2022
An analytic model for III-V nanowire growth by metal organic chemical vapor deposition (MOCVD) in regular arrays on patterned substrates is presented. The model accounts for some new features that, to the author’s knowledge, have not yet been considered.
Vladimir G. Dubrovskii
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Morphology and optical properties of CuAlS2 crystals prepared using the solid-phase Al and S precursors

Ruhuna Journal of Science, 2020
Copper dithiocarbamate and aluminium dithiocarbamate were prepared and then characterized by infrared spectroscopy. The combination of the prepared precursors in different ratios was deposited on glass substrates using metal-organic chemical vapour ...
J. Damisa, B. Olofinjana, O. Ebomwonyi, M.A. Eleruja, S.O. Azi   +4 more
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Parameter study of the high temperature MOCVD numerical model for AlN growth using orthogonal test design

Scientific Reports, 2021
We investigated the process parameters of the high temperature MOCVD (HT-MOCVD) numerical model for the AlN growth based on CFD simulation using orthogonal test design.
Jiadai An, Xianying Dai, Lansheng Feng, Jieming Zheng   +3 more
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The Structure and Chemical Composition of the Cr and Fe Pyrolytic Coatings on the MWCNTs’ Surface According to NEXAFS and XPS Spectroscopy

Nanomaterials, 2020
The paper is devoted to the structure and properties of the composite material based on multi-walled carbon nanotubes (MWCNTs) covered with pyrolytic iron and chromium.
Danil Sivkov, Olga Petrova, Alena Mingaleva, Anatoly Ob’edkov, Boris Kaverin, Sergey Gusev, Ilya Vilkov, Sergey Isaenko, Dmitriy Bogachuk, Roman Skandakov, Viktor Sivkov, Sergey Nekipelov   +11 more
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MOCVD AND PLASMA MOCVD OF METAL OXIDE FILMS

Le Journal de Physique Colloques, 1989
No abstract ...
Weglicki, P., Cao, Z., Skillen, N., Owen, J., Moseley, P.   +4 more
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Monometallic Pd and Pt and Bimetallic Pd-Pt/Al2O3-TiO2 for the HDS of DBT: Effect of the Pd and Pt Incorporation Method

Journal of Chemistry, 2014
The effect of the preparation method of monometallic Pd and Pt and bimetallic Pd-Pt/Al2O3-TiO2 catalysts on the hydrodesulfurization (HDS) of dibenzothiophene (DBT) was investigated in this study.
Reynaldo Martínez Guerrero, Agileo Hernández-Gordillo, Víctor Santes, Jorge Roberto Vargas García, José Escobar, Leonardo Díaz-García, Lucía Díaz Barriga Arceo, Vicente Garibay Febles   +7 more
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Sharp interfaces in p+-AlGaAs/n-GaAs epitaxial structures obtained by MOCVD

Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, 2014
The complexity of forming sharp and high-quality boundaries in p+AlGaAs/n-GaAs systems by MOCVD method is caused by differing on 80–120°С optimal crystallization temperature of GaAs layers and n-AlGaAs solid solutions.
N. M. Vakiv, S. I. Krukovskii, S. Yu. Larkin, A. Yu. Avksent'ev, R. S. Krukovskii   +4 more
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Realization of exciton-polariton condensation in GaAs-based microcavity grown by metalorganic chemical vapor deposition

Physical Review Research, 2022
Metalorganic chemical vapor deposition (MOCVD) has not been often used for studying exciton-polariton condensation and developing polaritonic devices, although it is a powerful mass productive method for practical applications.
Daegwang Choi, Min Park, Chan-Young Sung, Hyoungsoon Choi, Yong-Hoon Cho   +4 more
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An inductively coupled plasma metal organic chemical vapor deposition based on showerhead structure for low temperature growth

Materials Research Express, 2021
An inductively coupled plasma metal organic chemical vapor deposition (ICP-MOCVD) based on showerhead structure is proposed for the low temperature growth of thin solid films including GaN.
Zixuan Zhang, Yi Luo, Jiadong Yu, Xiang Li, Jian Wang, Wangyang Yu, Lai Wang, Zhibiao Hao, Changzheng Sun, Yanjun Han, Bing Xiong, Hongtao Li   +11 more
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Epitaxial growth of β-Ga2O3 by hot-wall MOCVD

AIP Advances, 2022
The hot-wall metalorganic chemical vapor deposition (MOCVD) concept, previously shown to enable superior material quality and high performance devices based on wide bandgap semiconductors, such as Ga(Al)N and SiC, has been applied to the epitaxial growth
Daniela Gogova, Misagh Ghezellou, Dat Q. Tran, Steffen Richter, Alexis Papamichail, Jawad ul Hassan, Axel R. Persson, Per O. Å. Persson, Olof Kordina, Bo Monemar, Matthew Hilfiker, Mathias Schubert, Plamen P. Paskov, Vanya Darakchieva   +13 more
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